7SSS01S Search Results

Contextual Info: DM1M36SJ/DM1M32SJ 1Mbx36/1Mbx32 Enhanced DRAM SIMM r ^ M T R O N Product Specification Features Architecture • 2KByte SRAM Cache Memory for 15ns Random Reads Within a Page ■ Fast DRAM Array for 35ns Access to Any New Page ■ Write Posting Register for 15ns Random Writes and Burst Writes

Contextual Info: FM24C08FRAM SerialMemory $ j^ a M IR O N Product Preview Features I 8Kbit Nonvolatile Ferroelectric RAM Organized as 1,024 x 8 I Very Low Power CMOS Technology - IOOjiA Active Read or Write - IOjiA Standby Over Commercial Temperature Range I Reliable Thin Film Ferroelectric Technology

MC6805

Abstract: Ramtron FRAM Serial Memory
Contextual Info: F IM TRO N 2 M 5 1 6 F R A M S e r i a l M e m o r y Product Preview* Features • 16Kbit Nonvolatile Ferroelectric RAM Organized as 2,048 x 8 ■ Low Power CMOS Technology - lOpA Standby Over Industrial Temperature Range - 5|iA Standby Over Commercial Temperature Range

Contextual Info: 3 M T R O N DM2223/2233Sync Bursting EDRAM 512Kbx 8 EnhancedDynamic RAM Preliminary Datasheet Features • 8Kbit SRAM Cache Memory for 15ns Random Reads Within Four Active Pages ■ Fast 4Mbit DRAM Array for 35ns Access to Any New Page ■ Write Posting Register for 15ns Random or Burst Writes Within

PJ 0416 1v

Abstract: til 3010 1208FRAM 7S5SG15
Contextual Info: RAMTRON 4SE CORP D 7SSSG15 GGÜÜO^b 12D I RAH F M 1 2 0 8 F R A M M e m o ry r ^ lM T R O 4,096-Bit Nonvolatile Ferroelectric RAM Product Preview N Features • 4,096-Bit Nonvolatile Ferroelectric RAM Organized as 512wx 8b ■ CMOS Technology with Integrated Ferroelectric

edram

Contextual Info: DM2203/2213EDRAM 512Kbx 8 Enhanced Dynamic RAM F ^ M T R O N Preliminary Datasheet Features • 8Kbit SRAM Cache Memory for 15ns Random Reads Within Four Active Pages ■ Fast 4Mbit DRAM Array for 35ns Access to Any New Page ■ Write Posting Register for 15ns Random Writes and Burst Writes

Contextual Info: FM1608S FRAM Memory r^ M 65,536-Bit Nonvolatile Ferroelectric RAM Product Specification T R O N Features • 65,536 Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 8,192 x 8 ■ CMOS Technology with Integrated Ferroelectric Storage Cells ■ Fully Synchronous Operation

transistor A4t

Abstract: transistor A4t 45 transistor A4t 35 transistor A4t 16
Contextual Info: ï éoJm RAfITRON CORP 33E D 755SD15 aGOQG71 □ FMx 1208FRAM Memory r ^ M 4,096-Bit Nonvolatile Ferroelectric RAM Engineering Evaluation Unit* T R ü N v Features • 4,096-Bit Nonvolatile Ferroelectric RAM Organized as 512w x 8b ■ CMOS Technology with Integrated Ferroelectric

xicor X24C04

Contextual Info: FM24C04 FRAM Serial Memory r ^ M T R O N Product Specification Features • 4,096-Bit Nonvolatile Ferroelectric RAM Organized as 512wx 8b ■ Very Low Power CMOS Technology - lOOpA Active Read or Write - 25pA Standby Over Commercial Temperature Range ■ Reliable Thin Film Ferroelectric Technology

pin configurations of 24c04 1

Abstract: 24C04 xicor FM24C04 LSBP
Contextual Info: FM24C04 FRAM Serial Memory F ^ M T R O IM Product Specification Features • 4,096-Bit Nonvolatile Ferroelectric RAM Organized as 512wx 8b ■ Very Low Power CMOS Technology - lOOpA Active Read or Write - 25]iA Standby Over Commercial Temperature Range

Ferroelectric RAM

Contextual Info: FM1208S FRAM Memory r ^ M T R O N 4,096-Bit Nonvolatile Ferroelectric RAM Product Specification Features • 4,096 Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 512 x 8 ■ CMOS Technology with Integrated Ferroelectric Storage Cells ■ Fully Synchronous Operation

t0dv

Contextual Info: E FM25160FRAM Serial Memory r ^ M T R O N Product Preview* Features • 16Kbit Nonvolatile Ferroelectric RAM Organized as 2,048 x f ■ Low Power CMOS Technology - lOpA Standby Over Industrial Temperature Range -5|iA Standby Over Commercial Temperature Range

24C16

Abstract: FM24C16 24C16 equivalent
Contextual Info: FM24C16 FRAM SerialMemory r ^ M T R O N Product Preview Features I 16Kbit Nonvolatile Ferroelectric RAM Organized as 2,048 x 8 I Very Low Power CMOS Technology - lOOpA Active Read or Write -25pA Standby Over Commercial Temperature Range I Reliable Thin Film Ferroelectric Technology