FM25160 Search Results

FM25160

Abstract: 1E10 FM25040 FM25160-P FM25160-S MS-001
Contextual Info: FM25160 16Kb FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 55° C • No write delay • Advanced high-reliability ferroelectric process

Contextual Info: FM25160 16Kb FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

1E10

Abstract: FM25040 FM25160 FM25160-P FM25160-S MS-001
Contextual Info: FM25160 16Kb FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 85° C • NoDelay write • Advanced high-reliability ferroelectric process

"Ferroelectric RAM"

Abstract: 25160 SCK 055 FM25040 FM25160 MC6805 MC68HC11
Contextual Info: FM25160 FRAM Serial Memory Product Specification Features Simple Three Wire Bus - SPI Compatible CPOL = 0, CPHA = 0 - 2.1MHz Maximum Clock Rate • Multiple Levels of Write Protection - Hardware Write Protect Pin - Internal Write Enable Latch - Block Protect Bits

25160

Abstract: AN301 25C160 AN-301 FM25160 FM25C160
Contextual Info: AN-301 Differences in FM25160 and FM25C160 16K SPI FRAM Devices DESCRIPTION There are differences between the FM25160 and FM25C160 SPI 16Kb FRAM devices. The FM25160 operates up to 1.8MHz and supports Mode 0 clocking, whereas the FM25C160 operates at speeds up to

MC6805

Contextual Info: F ^ p M T R O N FM25160FRAM Serial Memory Product Specification Features • 16Kbit Nonvolatile Ferroelectric RAM Organized as 2,048 x 8 ■ Low Power CMOS Technology - I OpA Standby Over Industrial Temperature Range - 5}iA Standby Over Commercial Temperature Range

DATASHEET OF SPI protocol

Abstract: FM25040 FM25160
Contextual Info: Application Note SPI Bus Compatibility FM25160 16Kb SPI FRAM Overview The FM25160 uses an industry standard SPI interface. When comparing the FM25160 with 16Kb SPI EEPROMs, users may notice two minor operating differences. First, the SPI bus protocol includes 4 modes which may be selected by the

Contextual Info: FM25160FRAM Serial Memory w ^ p is ilT R O N features <4 KiKhil N onvolatile F e rro e le c tric KAVI O rg a m /e d as 2 .0 iN \ S • S im ple T h re e W ire Bus H Low P o w e r CMOS T e ch n o lo g \ SIM C o m p a lib le CPOL = 0 , CPIIA = 0 2 .1 VII1/ M axim um C lo ck Rate

Contextual Info: FM25160 16Kb F R A M 6 R 3 M 1 R O N Serial M em ory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High endurance 10 Billion (1010) read/writes • 10 year data retention at 55° C • No write delay • Advanced high-reliability ferroelectric process

FM25040

Abstract: FM25160 FM25160-P FM25160-S MS-001 5C260
Contextual Info: FM25160 16Kb FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

fm25160s

Contextual Info: FM25160 16Kb FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 85° C • NoDelay write • Advanced high-reliability ferroelectric process

AN-300

Abstract: FM25040 FM25160
Contextual Info: AN-300 SPI Bus Compatibility FM25160 16Kb SPI FRAM Overview The FM25160 uses an industry standard SPI interface. When comparing the FM25160 with 16Kb SPI EEPROMs, users may notice two minor operating differences. First, the SPI bus protocol includes 4 modes which may be selected by the

1E10

Abstract: FM25040 FM25160 FM25160-P FM25160-S opcoa
Contextual Info: FM25160 6 R 3 M 1 R O N 16Kb FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High endurance 10 Billion (1010) read/writes • 10 year data retention at 55° C • No write delay • Advanced high-reliability ferroelectric process

EDGE22

Abstract: FM25040 FM25160
Contextual Info: Application Note SPI Bus Compatibility FM25160 16Kb SPI FRAM Overview The FM25160 uses an industry standard SPI interface. When comparing the FM25160 with 16Kb SPI EEPROMs, users may notice two minor operating differences. First, the SPI bus protocol includes 4 modes which may be selected by the

t0dv

Contextual Info: E FM25160FRAM Serial Memory r ^ M T R O N Product Preview* Features • 16Kbit Nonvolatile Ferroelectric RAM Organized as 2,048 x f ■ Low Power CMOS Technology - lOpA Standby Over Industrial Temperature Range -5|iA Standby Over Commercial Temperature Range

AEC-Q100

Abstract: FM25160 FM25C160 FM25C160-S
Contextual Info: FM25C160 16Kb FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM25160

Abstract: FM25C160 FM25C160-P FM25C160-S MS-001
Contextual Info: FM25C160 16Kb FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

A6001

Abstract: FM25160 FM25C160 FM25C160-GA Q100
Contextual Info: AEC Q100 Grade 1 Compliant FM25C160 – Automotive Temp. 16Kb FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

1E10

Abstract: FM25040 FM25040-P FM25040-S FM25160 MS-001
Contextual Info: FM25040 4Kb FRAM Serial Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 55° C • No write delay • Advanced high-reliability ferroelectric process

FM25C160-GTR

Abstract: FM25C160-G AEC-Q100 FM25160 FM25C160 FM25C160-S
Contextual Info: FM25C160 16Kb FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

AEC-Q100-002

Abstract: FM25160
Contextual Info: Preliminary FM25C160C 16Kb Serial 5V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits  High Endurance 1 Trillion 1012 Read/Writes  36 year Data Retention at +75C  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

Contextual Info: FM25C160B 16Kb Serial 5V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM Organized as 2,048 x 8 bits High Endurance 1 Trillion 1012 Read/Writes 38 year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Sophisticated Write Protection Scheme

MC6805

Abstract: Ramtron FRAM Serial Memory
Contextual Info: F IM TRO N 2 M 5 1 6 F R A M S e r i a l M e m o r y Product Preview* Features • 16Kbit Nonvolatile Ferroelectric RAM Organized as 2,048 x 8 ■ Low Power CMOS Technology - lOpA Standby Over Industrial Temperature Range - 5|iA Standby Over Commercial Temperature Range

1E10

Abstract: FM25040 FM25040-P FM25040-S FM25160 MS-001
Contextual Info: FM25040 4Kb FRAM Serial Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 85° C • NoDelay write • Advanced high-reliability ferroelectric process