A00002G1 Search Results

Contextual Info: FM25040B 4Kb Serial 5V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits  High Endurance 1 Trillion 1012 Read/Writes  38 year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

AEC-Q100-003

Abstract: FM25W256
Contextual Info: FM25W256 256Kb Wide Voltage SPI F-RAM Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 Year Data Retention (@ +75ºC)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

R5L16B

Abstract: FM25L16B-GTR fm25l16b-g
Contextual Info: FM25L16B 16Kb Serial 3V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 Year Data Retention (@ +75ºC)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

FM25W256-Gtr

Contextual Info: FM25W256 256Kb Wide Voltage SPI F-RAM Features 256K bit Ferroelectric Nonvolatile RAM Organized as 32,768 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 38 Year Data Retention (@ +75ºC) NoDelay Writes Advanced High-Reliability Ferroelectric Process

R5L16B

Abstract: AEC-Q100-002 FM25L16B FM25L16B-DG FM25L16B-G
Contextual Info: Preliminary FM25L16B 16Kb Serial 3V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 Year Data Retention (@ +75ºC) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

fm24c04b

Contextual Info: FM24C04B 4Kb Serial 5V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM Organized as 512 x 8 bits High Endurance 1012 Read/Writes 38 Year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface

FM24CL04BG

Contextual Info: FM24CL04B 4Kb Serial 3V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM Organized as 512 x 8 bits High Endurance 1014 Read/Writes 38 Year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface

AEC-Q100-002

Abstract: FM25160
Contextual Info: Preliminary FM25C160C 16Kb Serial 5V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits  High Endurance 1 Trillion 1012 Read/Writes  36 year Data Retention at +75C  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

Contextual Info: FM25L04B 4Kb Serial 3V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM Organized as 512 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 38 Year Data Retention (@ +75ºC) NoDelay Writes Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI

Contextual Info: FM24C04B 4Kb Serial 5V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM Organized as 512 x 8 bits High Endurance 1012 Read/Writes 38 Year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface

Contextual Info: FM25C160B 16Kb Serial 5V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM Organized as 2,048 x 8 bits High Endurance 1 Trillion 1012 Read/Writes 38 year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Sophisticated Write Protection Scheme

Contextual Info: FM25040B 4Kb Serial 5V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM Organized as 512 x 8 bits High Endurance 1 Trillion 1012 Read/Writes 38 year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Sophisticated Write Protection Scheme

FM24CL16BG

Abstract: fm24cl16b-g AEC-Q100-002 FM24CL16 FM24CL16B
Contextual Info: Preliminary FM24CL16B 16Kb Serial 3V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High Endurance 1014 Read/Writes • 38 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM25L64B

Abstract: FM25CL64BG FM25CL64B-G r5l64B FM25CL64B rev 1.0 FM25CL64B-GTR AEC-Q100-002 FM25CL64B FM25CL64B Feb 2011 fm25l64
Contextual Info: Preliminary FM25CL64B 64Kb Serial 3V F-RAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 Year Data Retention (@ +75ºC) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM25L04B

Abstract: FM-25
Contextual Info: FM25L04B 4Kb Serial 3V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 Year Data Retention (@ +75ºC)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

fm24c64b-gtr

Abstract: FM24C64B
Contextual Info: FM24C64B 64Kb Serial 5V F-RAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits  High Endurance 1 Trillion 1012 Read/Writes  38 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

fm24c04-c-g

Contextual Info: Preliminary FM24C04C 4Kb Serial 5V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits  High Endurance 1012 Read/Writes  36 Year Data Retention at +75C  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

Contextual Info: Preliminary FM25C160B 16Kb Serial 5V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 38 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: FM24W256 256Kb Wide Voltage Serial F-RAM Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 year Data Retention (@ +75ºC)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

FM24C64B

Contextual Info: Preliminary FM24W64 64Kb Wide Voltage Serial F-RAM Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 year Data Retention (@ +75ºC) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

fm25040B-GTR

Contextual Info: Preliminary FM25040B 4Kb Serial 5V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 38 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM25640B-G

Contextual Info: FM25640B 64Kb Serial 5V F-RAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits  High Endurance 1 Trillion 1012 Read/Writes  38 Year Data Retention  NoDelay Writes  Advanced high-reliability ferroelectric process

AEC-Q100-002

Abstract: FM25040
Contextual Info: Preliminary FM25040B 4Kb Serial 5V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 38 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

AEC-Q100-002

Abstract: FM25L04B
Contextual Info: Preliminary FM25L04B 4Kb Serial 3V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 Year Data Retention (@ +75ºC) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process