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    FDPF Datasheets (107)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDPF035N06B_F152
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 88A TO-220F Original PDF 10
    FDPF035N06B-F152
    		onsemi MOSFET N-CH 60V 88A TO-220F Original PDF 683.73KB 10
    FDPF041N06BL1
    		ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 77A TO-220F Original PDF 447.4KB
    FDPF045N10A
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 67A TO-220-3 Original PDF 9
    FDPF085N10A
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 40A TO-220F Original PDF 9
    FDPF10N50FT
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 9A TO-220F Original PDF 8
    FDPF10N50UT
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 8A TO-220F-3 Original PDF 8
    FDPF10N60NZ
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 10A TO-220F Original PDF 10
    FDPF10N60ZUT
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V TO-220F-3 Original PDF 8
    FDPF12N35
    		Fairchild Semiconductor 350V N-Channel MOSFET Original PDF 805.29KB 8
    FDPF12N35
    		Fairchild Semiconductor 350V N-Channel MOSFET Original PDF 375.87KB 10
    FDPF12N50
    		Fairchild Semiconductor N-Channel MOSFET 500V, 11.5A, 0.65 Ohm Original PDF 343.3KB 10
    FDPF12N50FT
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 11.5A TO-220F Original PDF 8
    FDPF12N50FT
    		Fairchild Semiconductor N-Channel MOSFET 500V, 11.5A, 0.7 Ohm Original PDF 663.35KB 10
    FDPF12N50NZ
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V TO-220FP Original PDF 10
    FDPF12N50NZT
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 11.5A TO-220F Original PDF 10
    FDPF12N50T
    		Fairchild Semiconductor 500V N-Channel MOSFET; Package: TO-220F; No of Pins: 3; Container: Rail Original PDF 343.25KB 10
    FDPF12N50UT
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V TO-220F-3 Original PDF 8
    FDPF12N60NZ
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V TO-220F-3 Original PDF 10
    FDPF13N50FT
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 12A TO-220F Original PDF 8
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    FDPF Price and Stock

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    Samtec Inc CLT-127-02-F-D-P-FR

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    Master Electronics CLT-127-02-F-D-P-FR
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    onsemi FDPF3N50NZ

    N-Channel Power MOSFET UniFETTM II 500 V 3 A 2.5 Ω TO-220F
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    Master Electronics FDPF3N50NZ
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    Avnet Americas FDPF3N50NZ Tube 2,000
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    Onlinecomponents.com FDPF3N50NZ 415
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    Rochester Electronics FDPF3N50NZ 2,573 1
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    TME FDPF3N50NZ 415 139
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    Flip Electronics FDPF3N50NZ 476
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    Samtec Inc CLT-133-02-F-D-P-FR

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    Master Electronics CLT-133-02-F-D-P-FR
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    Samtec Inc CLM-124-02-F-D-P-FR

    LOW PROFILE DUAL-WIPE SOC
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    Master Electronics CLM-124-02-F-D-P-FR
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    Avnet Americas CLM-124-02-F-D-P-FR Tape & Reel 1 Weeks, 6 Days 1,550
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    Sager CLM-124-02-F-D-P-FR 1,550
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    Samtec Inc CLP-110-02-F-D-P-FR

    LOW PROFILE DUAL-WIPE SOC
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    Master Electronics CLP-110-02-F-D-P-FR
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    Avnet Americas CLP-110-02-F-D-P-FR Tape & Reel 1 Weeks, 5 Days 1,200
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    Sager CLP-110-02-F-D-P-FR 1,200
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    Avnet Abacus CLP-110-02-F-D-P-FR 7,200 4 Weeks 1,200
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    FDPF Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FDPF4N60NZ

    Contextual Info: UniFET-IITM FDP4N60NZ / FDPF4N60NZ N-Channel MOSFET 600V, 3.8A, 2.5Ω Features • RDS on = 1.9Ω ( Typ.)@ VGS = 10V, ID = 1.9A Description • Low Gate Charge ( Typ. 8.3nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		fdp4n60nzfdpf4n60nz PDF

    Contextual Info: FDPF035N06B N-Channel PowerTrench MOSFET 60 V, 88 A, 3.5 mΩ Features Description • RDS on = 2.91 mΩ ( Typ.) @ VGS = 10 V, ID = 88 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining


    Original     		fdpf035n06b PDF

    FDPF12N50T

    Abstract: FDP12N50
    Contextual Info: UniFETTM FDP12N50 / FDPF12N50T tm N-Channel MOSFET 500V, 11.5A, 0.65Ω Features Description • RDS on = 0.55Ω (Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		fdp12n50fdpf12n50t PDF

    FDP7N50

    Abstract: FDPF7N50
    Contextual Info: UniFET FDP7N50/FDPF7N50 TM 500V N-Channel MOSFET Features Description • 7A, 500V, RDS on = 0.9Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 12.8 nC)


    Original     		fdp7n50/fdpf7n50fdp7n50fdpf7n50 PDF

    FDPF*10N60NZ

    Abstract: FDPF10N60NZ FDP10N60NZ fdpf10n60 FDPF10N60N fdp10 FDPF fdpf10n6 220 to 110 power
    Contextual Info: UniFET-II TM FDP10N60NZ / FDPF10N60NZ N-Channel MOSFET 600V, 10A, 0.75 Features Description • RDS on = 0.64 ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		fdp10n60nzfdpf10n60nzfdpf*10n60nzfdpf10n60+5fdpf10n60nfdp10fdpffdpf10n6220 to 110 power PDF

    FDP7N60

    Abstract: FDPF7N60NZ fdpf7n60 FDP7N60NZ FDPF 480v
    Contextual Info: UniFET-II TM FDP7N60NZ / FDPF7N60NZ N-Channel MOSFET 600V, 6.5A, 1.25 Features Description • RDS on = 1.05 ( Typ.)@ VGS = 10V, ID = 3.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		fdp7n60nzfdpf7n60nzfdp7n60fdpf7n60+2fdpf480v PDF

    Contextual Info: UniFETTM FDP12N50F / FDPF12N50F tm N-Channel MOSFET 500V, 11.5A, 0.7Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		fdp12n50ffdpf12n50f PDF

    Contextual Info: UniFET TM FDP15N65 / FDPF15N65 650V N-Channel MOSFET Features Description • 15A, 650V, RDS on = 0.44Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		fdp15n65fdpf15n65 PDF

    Contextual Info: FDP5N50NZ / FDPF5N50NZ N-Channel UniFETTM II MOSFET 500 V, 4.5 A, 1.5 Ω Features Description • R DS on = 1.38 Ω (Typ.) @ VGS = 10 V, ID = 2.25 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS


    Original     		fdp5n50nzfdpf5n50nz PDF

    Contextual Info: FDPF4N60NZ N-Channel UniFETTM II MOSFET 600 V, 3.8 A, 2.5 Ω Features Description • RDS on = 1.9 Ω (Typ.) @ VGS = 10 V, ID = 1.9 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest


    Original     		fdpf4n60nz PDF

    Contextual Info: FDP8N50NZ / FDPF8N50NZ N-Channel UniFETTM II MOSFET 500 V, 8 A, 850 m Features Description • RDS on = 770 m (Typ.) @ VGS = 10 V, ID = 4 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS


    Original     		fdp8n50nzfdpf8n50nz PDF

    Contextual Info: FDPF5N50T N-Channel UniFETTM MOSFET 500 V, 5 A, 1.4 Ω Features Description • RDS on = 1.15 Ω (Typ.) @ VGS = 10 V, ID = 2.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		fdpf5n50t PDF

    Contextual Info: FDPF3N50NZ N-Channel UniFETTM II MOSFET 500 V, 3 A, 2.5  Features Description • RDS on = 2.1  (Typ.) @ VGS = 10 V, ID = 1.5 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS


    Original     		fdpf3n50nz PDF

    Contextual Info: FDPF190N15A N-Channel PowerTrench MOSFET 150 V, 27.4 A, 19 mΩ Features Description • RDS on = 14.7 mΩ (Typ.) @ VGS = 10 V, ID = 27.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining


    Original     		fdpf190n15ao-220f PDF

    Contextual Info: FDPF16N50UT N-Channel UniFETTM Ultra FRFETTM MOSFET 500 V, 15 A, 480 mΩ Features Description • RDS on = 370 mΩ ( Typ.) @ VGS = 10 V, ID = 7.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This


    Original     		fdpf16n50ut50nsec200nsec PDF

    Contextual Info: FDP20N50 / FDPF20N50 / FDPF20N50T N-Channel UniFETTM MOSFET 500 V, 20 A, 230 mΩ Features Description • RDS on = 200 mΩ (Typ.) @ VGS = 10 V, ID = 10 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.


    Original     		fdp20n50fdpf20n50fdpf20n50t PDF

    Contextual Info: FDPF33N25T N-Channel UniFETTM MOSFET 250 V, 33 A, 94 mΩ Features Description • RDS on = 94 mΩ (Max.) @ VGS = 10 V, ID = 16.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		fdpf33n25t PDF

    Contextual Info: FDPF3860T N-Channel PowerTrench MOSFET 100 V, 20 A, 38.2 mΩ Features Description • RDS on = 29.1 mΩ (Typ.) @ VGS = 10 V, ID = 5.9 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.


    Original     		fdpf3860to-220f PDF

    Contextual Info: FDPF085N10A N-Channel PowerTrench MOSFET 100V, 40A, 8.5mW Features General Description • RDS on = 6.5mW ( Typ.)@ VGS = 10V, ID = 40A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		fdpf085n10a PDF

    FDP7N50U

    Abstract: FDPF7N50U
    Contextual Info: TM UniFET FDP7N50U/FDPF7N50U 500V N-Channel MOSFET Features Description • 5A, 500V, RDS on = 1.5Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		fdp7n50u/fdpf7n50ufdp7n50ufdpf7n50u PDF

    Contextual Info: UniFE TM FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET, FRFET 600V, 4.5A, 2Ω Features Description • RDS on = 1.7Ω ( Typ.) @ VGS = 10V, ID = 2.25A • Low gate charge ( Typ. 14.5nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		fdp6n60zufdpf6n60zut PDF

    Contextual Info: UniFET FDP10N60ZU / FDPF10N60ZUT TM tm N-Channel MOSFET, FRFET 600V, 9A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 4.5A • Low gate charge ( Typ. 31nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		fdp10n60zufdpf10n60zut PDF

    FDPF*12n50ut

    Abstract: FDPF12N50UT
    Contextual Info: TM Ultra FRFET FDP12N50U / FDPF12N50UT tm N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		fdp12n50ufdpf12n50utfdpf*12n50ut PDF

    FDPF12N35

    Contextual Info: UniFET FDPF12N35 350V N-Channel MOSFET Features Description • 7.5A, 350V, RDS on = 0.38Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 18 nC)


    Original     		fdpf12n35o-220f PDF