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    Contextual Info: UniFET FDP10N60ZU / FDPF10N60ZUT TM tm N-Channel MOSFET, FRFET 600V, 9A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 4.5A • Low gate charge ( Typ. 31nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		fdp10n60zufdpf10n60zut PDF

    FDPF10N60ZUT

    Abstract: mosfet 10a 600v 3M-J20 N-Channel 600V MOSFET
    Contextual Info: TM UniFET FDP10N60ZU / FDPF10N60ZUT tm N-Channel MOSFET, FRFET 600V, 9A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 4.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		fdp10n60zufdpf10n60zutmosfet 10a 600v3m-j20+1n-channel 600v mosfet PDF

    fdpf10n60

    Contextual Info: UniFET FDP10N60ZU / FDPF10N60ZUT TM tm N-Channel MOSFET, FRFET 600V, 9A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 4.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		fdp10n60zu/fdpf10n60zutfdp10n60zufdpf10n60zutfdpf10n60 PDF