FDP12N50F Search Results

Contextual Info: UniFETTM FDP12N50F / FDPF12N50F tm N-Channel MOSFET 500V, 11.5A, 0.7Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

Contextual Info: UniFETTM FDP12N50F / FDPF12N50FT N-Channel MOSFET 500V, 11.5A, 0.7Ω Features Description • RDS on = 0.59Ω ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

Contextual Info: UniFETTM FDP12N50F / FDPF12N50FT N-Channel MOSFET 500V, 11.5A, 0.7Ω Features Description • RDS on = 0.59Ω ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

Contextual Info: UniFETTM FDP12N50F / FDPF12N50F tm N-Channel MOSFET 500V, 11.5A, 0.7Ω Features Description • RDS on = 0.59Ω ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

FDPF12N50FT

Abstract: FDP12N50F FDP12N50
Contextual Info: UniFETTM FDP12N50F / FDPF12N50FT tm N-Channel MOSFET 500V, 11.5A, 0.7Ω Features Description • RDS on = 0.59Ω ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

Contextual Info: FDPF12N50FT N-Channel UniFETTM FRFET MOSFET 500 V, 11.5 A, 700 m Features Description • RDS on = 650 m (Typ.) @ VGS = 10 V, ID = 6 A UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology.