FDP7N50 Search Results

FDP7N50 Datasheets (4)

Filter by Manufacturer

Fairchild Semiconductor

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
FDP7N50		Fairchild Semiconductor	500V N-Channel MOSFET	Original	PDF	321.61KB	10
FDP7N50		Fairchild Semiconductor	500V N-Channel MOSFET	Original	PDF	372.85KB	10
FDP7N50		Fairchild Semiconductor	500V N-Channel MOSFET	Original	PDF	372.85KB	10
FDP7N50U		Fairchild Semiconductor	500V N-Channel MOSFET	Original	PDF	977.53KB	10

FDP7N50 Price and Stock

Filter by Manufacturer

Select Manufacturer


onsemi FDP7N50 Power MOSFET, N-Channel, UniFETTM, 500 V, 7 A, 900 m?, TO-220 - Rail/Tube (Alt: FDP7N50)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	FDP7N50	Tube			2,000	1 - 10 - 100 - 1000 - 10000 $0.49	Buy Now
Flip Electronics	FDP7N50		3,000			1 $0.37 10 $0.37 100 $0.37 1000 $0.37 10000 $0.37	Get Quote
Fairchild Semiconductor Corporation FDP7N50 MOSFET N-Channel 500V 7A (Tc) TO-220-3 Tube
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	FDP7N50		343		1	1 - 10 - 100 $0.68 1000 $0.56 10000 $0.50	Buy Now

FDP7N50 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
FDP7N50 Abstract: FDPF7N50 Contextual Info: UniFET FDP7N50/FDPF7N50 TM 500V N-Channel MOSFET Features Description • 7A, 500V, RDS on = 0.9Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 12.8 nC)	Original	fdp7n50/fdpf7n50 fdp7n50 fdpf7n50	PDF
FDP7N50U Abstract: FDPF7N50U Contextual Info: TM UniFET FDP7N50U/FDPF7N50U 500V N-Channel MOSFET Features Description • 5A, 500V, RDS on = 1.5Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.	Original	fdp7n50u/fdpf7n50u fdp7n50u fdpf7n50u	PDF
Contextual Info: FDP7N50 N-Channel UniFETTM MOSFET 500 V, 7 A, 900 m Features Description • RDS on = 900 m (Max.) @ VGS = 10 V, ID = 3.5 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to	Original	fdp7n50	PDF
FDPF7N50F Abstract: FDP7N50F Contextual Info: UniFETTM FDP7N50F / FDPF7N50F tm N-Channel MOSFET, FRFET 500V, 6A, 1.15Ω Features Description • RDS on = 0.95Ω ( Typ.)@ VGS = 10V, ID = 3A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,	Original	fdp7n50f fdpf7n50f	PDF
Contextual Info: UniFET TM FDP7N50/FDPF7N50 500V N-Channel MOSFET Features Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • 7A, 500V, RDS on = 0.9Ω @VGS = 10 V •	Original	fdp7n50/fdpf7n50	PDF
FDPF7N50U Contextual Info: TM UniFET FDP7N50U/FDPF7N50U 500V N-Channel MOSFET Features Description • 5A, 500V, RDS on = 1.5Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.	Original	fdp7n50u/fdpf7n50u fdpf7n50u	PDF
Contextual Info: TM UniFET FDP7N50U/FDPF7N50U 500V N-Channel MOSFET Features Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • 5A, 500V, RDS on = 1.5 @VGS = 10 V	Original	fdp7n50u/fdpf7n50u	PDF
FDPF7N50U Contextual Info: UniFET TM FDP7N50U/FDPF7N50U 500V N-Channel MOSFET Features Description • 5A, 500V, RDS on = 1.5Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.	Original	fdp7n50u/fdpf7n50u fdpf7n50u	PDF
Contextual Info: FDP7N50 N-Channel UniFETTM MOSFET 500 V, 7 A, 900 m Features Description • RDS on = 900 m (Max.) @ VGS = 10 V, ID = 3.5 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to	Original	fdp7n50	PDF
500V 100A thyristors Abstract: 7A, 100v fast recovery diode fdpf7n50 N-CHANNEL ENHANCEMENT MODE POWER MOSFET 40v N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V p channel mosfet 100v FDP7N50 Contextual Info: UniFET FDP7N50/FDPF7N50 TM 500V N-Channel MOSFET Features Description • 7A, 500V, RDS on = 0.9Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 12.8 nC)	Original	fdp7n50/fdpf7n50 500v 100a thyristors 7a, 100v fast recovery diode fdpf7n50 +4n-channel enhancement mode power mosfet 40v n-channel enhancement mode power mosfet bvdss 30v p channel mosfet 100v fdp7n50	PDF
Contextual Info: UniFETTM FDP7N50F / FDPF7N50F tm N-Channel MOSFET, FRFET 500V, 6A, 1.15Ω Features Description • RDS on = 0.95Ω ( Typ.)@ VGS = 10V, ID = 3A • Low gate charge ( Typ. 15nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,	Original	fdp7n50f fdpf7n50f	PDF
FDPF7N50U Abstract: FDP7N50U Contextual Info: TM UniFET FDP7N50U/FDPF7N50U 500V N-Channel MOSFET Features Description • 5A, 500V, RDS on = 1.5 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.	Original	fdp7n50u/fdpf7n50u fdpf7n50u fdp7n50u	PDF
FDP7N50 Abstract: FDPF7N50 Contextual Info: UniFET FDP7N50/FDPF7N50 TM 500V N-Channel MOSFET Features Description • 7A, 500V, RDS on = 0.9Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 12.8 nC)	Original	fdp7n50/fdpf7n50 fdp7n50 fdpf7n50	PDF
FDP7N50 Abstract: FDPF7N50 Contextual Info: UniFET TM FDP7N50/FDPF7N50 500V N-Channel MOSFET Features Description • 7A, 500V, RDS on = 0.9Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 12.8 nC)	Original	fdp7n50/fdpf7n50 fdp7n50 fdpf7n50	PDF

220v AC voltage stabilizer schematic diagram Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585	Original	ad9272 p462-nd lng295lfcp2u p463-nd +11lng395mftp5u 220v ac voltage stabilizer schematic diagram lg color tv circuit diagram tda 9370 1000w inverter pure sine wave schematic diagram schematic diagram atx power supply 500w tv sharp ic tda 9381 ps circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor e 13005-2 superpro lx	PDF
interleaved Boost PFC Abstract: RG44 FDA18N50 FDPF5N50FT FDPF12N50FT fdpf16n50t FDA16N50 FDB12N50 FQA16N50 FDD6N50 Contextual Info: www.fairchildsemi.com AN-9066 UniFET — Optimized Switch for Discontinuous Current Mode Power Factor Correction Abstract This application note discusses merits of planar technology power MOSFET in discontinuous current mode power factor correction application. In most test conditions it is	Original	an-9066 interleaved boost pfc rg44 fda18n50 +7fdpf5n50ft fdpf12n50ft fdpf16n50t fda16n50 fdb12n50 fqa16n50 fdd6n50	PDF