FCJB Search Results

S4 6AA

Abstract: GE C6A transistor BC 575 GE 86A HDLC
Contextual Info: :8.1-88 =;>;3CDA7 ;>C7A=76;3C7 @?F7A A7<3G 8LIVWTLU Y fes HL>I8=>C< 86E67>A>IN x>A: *Dcowfhijfl Y j@2 9>:A:8IG>8 HIG:C<I= _7:IL:C 8D>A 6C9 8DCI68IH` Y fcjBB 8DCI68I <6E 6K6>A67A: x>A: *Dco.jefinfhf Y /D8@:IH 6K6>A67A: Y ,A6HI>8 H:6A:9 6C9 ;AJM EGDD;:9 INE:H 6K6>A67A:

GE C6A

Abstract: S4 6AA
Contextual Info: :8.1-88 =;>;3CDA7 ;>C7A=76;3C7 @?F7A A7<3G 8LIVWTLU Y fes HL>I8=>C< 86E67>A>IN x>A: *Dcowfhijfl Y j@2 9>:A:8IG>8 HIG:C<I= _7:IL:C 8D>A 6C9 8DCI68IH` Y fcjBB 8DCI68I <6E 6K6>A67A: x>A: *Dco.jefinfhf Y /D8@:IH 6K6>A67A: Y 36H= I><=I 6C9 ;AJM EGDD;:9 INE:H 6K6>A67A:

LC7818

Abstract: N1636D 5241j
Contextual Info: - KNa N 1 6 3 6 D r SA \Y O i =&mmi$=L-z INO. 16360 51793 N al636C ¿$ X. LC7818- \ 'S,. C M O S LSI 7 7 ^ V 3 ^ » , # fflìfc *MI 1 2J8I&5ft&0 V - X*1R - -f - * rt* „ (2) A tóW fcjB O fllíB A ;«)?- ( * - A * f c ± t f L E D Ä * ) . (31 (5) / y {± $ ,

TSM 1250

Abstract: BTW42 BTW38 800R BTW42-600R BTW42-600RC IEC134
Contextual Info: fcjbS3c131 QDll':i43 T ObE D N AMER PHI LIPS/ DI SC RE TE BTW42 SERIES ^T~-ar-/£~ THYRISTORS Glass-passivated silicon thyristors in metal envelopes with high dVp/dt capabilities. They are intended for use in power control circuits and switching systems where high transients can occur e.g. phase

Contextual Info: BROOKTREE CORP b3E J> m lhMSSTS GGG7125 S7T « B R K Interface Specification IS-330.24 D S 3 /E 3 F ram er H D L C F o r m a tte r P art # UGA-330 M arch, 1993 B r o o k tr e e B rooktree C orporation 9950 B arn es C anyon R oad San Diego, CA 92121 USA 6 1 9 -4 5 2 -7 5 8 0

GV285

Abstract: WB2F ZX 27s GCYK RWV73 3183B kd-153 STRZ 37XE1 u286
Contextual Info: r B^bZch^dch r PeZX^[^XVi^dch K R GV9U27S Mlbga_rmp ? I AQU PZg^Zh Smucp amlqsknrgml GV9U?Ennpmv3 8Y1 GV9U27S?Ennpmv3 83:Y1 GV;U2M?Ennpmv3 73<Y1 GV;U?Ennpmv3 839Y1 GV;U27S?Ennpmv3 9Y1 GV;[2M?Ennpmv3 8Y1 GV;[?Ennpmv3 9Y1 GV;[27S?Ennpmv3 9Y -79XHG. GV9U?Ennpmv3 ;XE1 GV9U27S?Ennpmv3 <XE1 GV;U2M?Ennpmv3 :39XE1 GV;U?Ennpmv3 ;3=XE1

ne 5555 timer

Contextual Info: Lj 3 E ì> ñin233 ÜG03Ô2E S14 « S E E SEEÛ TECHNOLOGY INC Technology, Incorporated 1024K High Speed EEPROM Ju ly 1992 Features • Military, Extended and Commercial Temperature Rangea • -S 5°C to +125°C Operation Military • -4 0 °C to +85°C Operation (Extended)

CODE HRY

Contextual Info: S . ‘ ON 5-R B J& » REV. £6 1 6£0P S m ss ñ # D ESC RIPTIO N DCN NO. DATE m E DR. s m APPD. CHK. & U APPD. 0NIMVOa 4#fflia P. C. B. H O L E P A T T E R N S ( R E F. / Í Ñ - ; U n ^ — $/ a > ( (CONTACT ± 0 . 05 N- O. 8 NO. 1 4 0 ;$ , : ) ) 140, 1 8 0 )

Contextual Info: F I Standard Product PMC-941033 ISSUES ^ I V i r " 1 PMC-Sierra, Inc. I V 1 ^ » _ _ , PM5347 S/UNI-PLUS SATURN USER NETWORK INTERFACE 155 Mbit/s&51 Mbit/s, 'PLUS' FE A TU R E S • Monolithic Saturn User Network Interface that implements the ATM physical layer

Contextual Info: 2TE D NAPC/ SIGNETICS Signetics • bb S3 T24 005405=1 T ■ T-V9-V7-/V SCN68000 16-/32-Bit Microprocessor Product Specification Microprocessor Products DESCRIPTION The SCN68000 is the first implementa­ tion of the S68000 1 6 /3 2 bit micropro­ cessor architecture. The SCN68000 has

Contextual Info: b3E D • 7Ttì707b DOllblD 443 *TSAJ SANY0SEMIC0NDUCT0R corp LM7001, 7001M 'fffP 3006B 3036B NMOSLSI Direct PLL Frequency Synthesizer 3 5 9 1A OVERVIEW The LM7001 and LM7001M are direct PLL frequency synthesizers that provide accurate reference frequencies

Contextual Info: 352 CONNECTION DIAGRAM PINOUT A 54LS/74LS352 DUAL 4-INPUT MULTIPLEXER D E S C R IP T IO N — The ’352 is a very high speed dual 4-input m ultiplexer with Com mon Select inputs and individual Enable inputs fo r each section. t can select tw o bits of data from fou r sources. The tw o buffered outputs present

sss 5411 AT

Abstract: NJU6432BF mkt 9 NJU6432 NJU6432B SEG23
Contextual Info: RH NJU6432B 1 / 2 f a . — 7 - f LCD • « Ifl- NJU6 4 3 2 B U , - f £ L C D 7 ‘co K 7 L C D £ * I/2 < ^ - C - T o □ t v - y y > h K 7 -f ' ' ’ i , 2 K 7 -f/ < > h & £ IA T Z Z t t f T ê i t o S U ' 53 K 7 - í a ’T ' 104 itz , S ^ l c S i B T '- f o

Contextual Info: C S-263 SILICON MONOLITHIC LINEAR AMPLIFIER Low Level See S tandard P ackage C o n fig u ra tio n S ketch No. 7 (TO -72 Metal C an) on pages 4 & 5. DESCRIPTION The CS-263 is a s ilic o n m o n o lith ic in te g ra te d c irc u it a m p lifie r in a TO -72 package.

ecg rectifier diode

Abstract: ECG 558 ECG diodes diode ecg 588 ECG555A 110MP
Contextual Info: Microwave Mixer Diodes Type No. Test Freq. MHz Noise Figure (dB) I.F. IMPED. 0 3 0 MHz (Ohms) VSWR Max. Ratio Burn Out (ERGS) Fig. No. 1N415C 9375 9.5 325-475 1.5 2.0 Z64 1N415E 9375 7.5 335-465 1.3 2.0 Z64 1N416C 3060 8.3 300-700 . 2.0 Z64 1N416E 3060

Philips FA 291

Contextual Info: IN TEG R A TED CIR C U ITS 8X C 52/54/58/80C 32 8XC51 FA/FB /FC/80C51 FA 8XC51 R A+/RB+/RC+/RD+/80C51 R A+ 8-bit CMOS low voltage, low power and high speed microcontroller families Preliminary specification 1997 Mar 21 IC20 Data Handbook Philips Semiconductors

Contextual Info: ESE D N AMER PHILIPS/DISCRETE • bb53131 ODEO4bO S B U K 454-400A B U K 454-400B P o w e rM O S tra n s is to r r - 3 ? - n GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

choke marking nb 03

Abstract: SOT121 Package BLF246
Contextual Info: Philips Semiconductors a tiS 3 R 3 1 0 0 5 TRÔD 536 APX Product specification VHF power MOS transistor BLF246 b'ìE i> N AUER PHILIPS/DISCRETE FEATURES PIN CONFIGURATION • High power gain • Low noise figure • Easy power control • Good thermal stability

ssi 201 DTMF DECODER

Abstract: audio echo cancellation ic audio echo ic Digital ECHO microphone mixing circuit DDB4375 MCS-51 MT93L16 MT93L16AQ LA32 aas7
Contextual Info: M IT E L CMOS M T93L16 Low-Voltage Acoustic Echo Canceller Preliminary Information SE M IC O N D U C T O R Features D S 5068 ISSU E3 July 1999 Ordering Information • Contains two echo cancellers: 112ms acoustic echo canceller + 16ms line echo canceller

Contextual Info: SERIES3 4 8 0 DESCRIPTION; FEATURES: Series 3480 capacitors are much smaller than conventional general-purpose miniature alumi­ num electrolytic capacitors. A newly developed, high-magnification etched foil is employed which allows the 3480 to be almost identical in case

CPU32RM

Abstract: XC68F333 D-10 D-12 M68000 MC68F333 ich9 Nippon capacitors EM- 546 stepper motor
Contextual Info: MC68F333UM/AD MC68F333 USER'S MANUAL M M O T O R O L A INTRODUCTION SIGNAL DESCRIPTIONS SINGLE-CHIP INTEGRATION MODULE CENTRAL PROCESSING UNIT TIME PROCESSOR UNIT QUEUED SERIAL MODULE ANALOG-TO-DIGITAL CONVERTER FLASH EEPROM STANDBY RAM MODULE STANDBY RAM WITH TPU EMULATION

TLC56281

Abstract: TLC5628 TLC5628C TLC5628CD TLC5628CN TLC5628I TLC5628ID TLC5628IN
Contextual Info: TLC5628C, TLC5628I OCTAL 8-BIT DIGITAL-TO-ANALOG CONVERTERS _ SLAS089 - NOVEMBER 1994 Eight 8-Bit Voltage Output OACs 5-V Single-Supply Operation Serial Interface High-impedance Reference Inputs Programmable 1 or 2 Times Output Range

UP1713

Abstract: yx 801 NEC 08F yx 801 ic upd1713 PP17134A 7flk P1A7 zf 200 gy-a TU27
Contextual Info: M o s M m m fà iM v iO v /S o iIn m te e g a te ie a ir u u it g rra d vC^ircuit /¿ P D 1 7 1 3 4 A /¿PD17134A, 17136A, 17136A A l±, 8 , 1 7 1 3 6 A 1 7 1 3 6 A ( A ) , t: y h A/DU > A - £ ( 4 ^ + *JU) , 2 < • tfP ? n *fè tì!S ]S & , (3 ^ Ÿ *^ )

transistor jc 817

Abstract: 2n5680 WCB410
Contextual Info: philips Sem iconductors • ^ 53^31 0 0 HS177 ATT ■ APX Preliminary specification Silicon planar epitaxial transistor 2N5680 b^E D N AP1ER PHIL I P S / D I S C R E T E Q U IC K R E F E R E N C E DATA PARAM ETER SYM BO L MIN. CONDITIONS MAX. ~VCBO “ VcEO