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    FAST IXFX Search Results

    FAST IXFX Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    CS-USB2AMBMMC-002
    Amphenol Cables on Demand Amphenol CS-USB2AMBMMC-002 Amphenol USB 2.0 High Speed Certified [480 Mbps] USB Type A to Micro B Cable - USB 2.0 Type A Male to Micro B Male [Android Sync + 28 AWG Fast Charge Ready] 2m (6.6') PDF
    CS-USB2AMBMMC-001
    Amphenol Cables on Demand Amphenol CS-USB2AMBMMC-001 Amphenol USB 2.0 High Speed Certified [480 Mbps] USB Type A to Micro B Cable - USB 2.0 Type A Male to Micro B Male [Android Sync + 28 AWG Fast Charge Ready] 1m (3.3') PDF
    UC385T-1
    Texas Instruments Fast Transient Response, 5-A, Low-Dropout Regulator 5-TO-220 Visit Texas Instruments Buy
    UC385T-3
    Texas Instruments Fast Transient Response, 5-A, Low-Dropout Regulator 5-TO-220 Visit Texas Instruments Buy

    FAST IXFX Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Preliminary Technical Information IXFK520N075T2 IXFX520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFETs VDSS ID25 = = 75V 520A Ω 2.2mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions VDSS


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    ixfk520n075t2ixfx520n075t2o-264520n075t2 PDF

    IXFK520N075T2

    Abstract: 7v150 IXFX520N075T2 PLUS247
    Contextual Info: Advance Technical Information IXFK520N075T2 IXFX520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 = = 75V 520A Ω 2.2mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings


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    ixfk520n075t2ixfx520n075t2o-264520n075t2+27v150plus247 PDF

    Contextual Info: Advance Technical Information TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 IXFK520N075T2 IXFX520N075T2 = = 75V 520A Ω 2.2mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings


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    ixfk520n075t2ixfx520n075t2o-264520n075t2 PDF

    IXFK

    Abstract: IXFK250N10P IXFX250N10P PLUS247
    Contextual Info: Preliminary Technical Information IXFK250N10P IXFX250N10P PolarTM Power MOSFET HiperFETTM VDSS ID25 = = ≤ RDS on 100V 250A Ω 6.5mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) (TAB) Symbol Test Conditions Maximum Ratings


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    ixfk250n10pixfx250n10po-264100ms+3250n10pixfkplus247 PDF

    ixfk44n80

    Contextual Info: Preliminary Technical Information IXFK44N80Q3 IXFX44N80Q3 HiperFETTM Power MOSFETs Q3-Class VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier 800V 44A Ω 190mΩ 300ns TO-264 (IXFK) Symbol Test Conditions


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    o-264plus247ixfk44n80q3ixfx44n80q3+2300nsixfk44n80 PDF

    Contextual Info: Advance Technical Information GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 IXFK220N17T2 IXFX220N17T2 170V 220A Ω 6.3mΩ 140ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions


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    ixfk220n17t2ixfx220n17t2140nso-264+1220n17t2 PDF

    Contextual Info: Advance Technical Information GigaMOSTM Power MOSFET VDSS ID25 IXFK180N25T IXFX180N25T = = 250V 180A Ω 12.9mΩ 200ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings


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    ixfk180n25tixfx180n25t200nso-264+1180n25t PDF

    Contextual Info: Preliminary Technical Information HiperFETTM Power MOSFETs Q3-Class VDSS ID25 IXFK32N100Q3 IXFX32N100Q3 = = ≤ ≤ RDS on trr 1000V 32A Ω 320mΩ 300ns N-Channel Enhancement Mode Fast Intrinsic Rectifier TO-264 (IXFK) Symbol Test Conditions Maximum Ratings


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    ixfk32n100q3ixfx32n100q3300nso-264+232n100q31-11-a PDF

    IXFK240N15T2

    Abstract: IXFX240N15T2 PLUS247
    Contextual Info: Advance Technical Information IXFK240N15T2 IXFX240N15T2 GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 = = 150V 240A Ω 5.2mΩ 140ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions


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    ixfk240n15t2ixfx240n15t2140nso-264+2240n15t2plus247 PDF

    360N10T

    Abstract: PLUS-247 IXFK360N10T IXFX360N10T PLUS247
    Contextual Info: Advance Technical Information IXFK360N10T IXFX360N10T GigaMOSTM Trench HiperFETTM Power MOSFET VDSS ID25 = = 100V 360A Ω 2.9mΩ 130ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions


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    ixfk360n10tixfx360n10t130nso-264+3360n10tplus-247plus247 PDF

    Contextual Info: Advance Technical Information IXFK260N17T IXFX260N17T GigaMOSTM Power MOSFET VDSS ID25 = = 170V 260A Ω 6.5mΩ 200ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings


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    ixfk260n17tixfx260n17t200nso-264+2-55ig260n17t PDF

    NF 034

    Contextual Info: Advance Technical Information GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 IXFK320N17T2 IXFX320N17T2 170V 320A Ω 5.2mΩ 150ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions


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    ixfk320n17t2ixfx320n17t2150nso-264+2320n17t2nf 034 PDF

    Contextual Info: Preliminary Technical Information IXFK32N100Q3 IXFX32N100Q3 HiperFETTM Power MOSFETs Q3-Class VDSS ID25 = = ≤ ≤ RDS on trr 1000V 32A Ω 320mΩ 300ns N-Channel Enhancement Mode Fast Intrinsic Rectifier TO-264 (IXFK) Symbol Test Conditions Maximum Ratings


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    ixfk32n100q3ixfx32n100q3300nso-264+3plus24732n100q31-11-a PDF

    IXFX320N17T2

    Abstract: PLUS247 IXFK320N17T2
    Contextual Info: Advance Technical Information IXFK320N17T2 IXFX320N17T2 GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 = = 170V 320A Ω 5.2mΩ 150ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions


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    ixfk320n17t2ixfx320n17t2150nso-264+2320n17t2plus247 PDF

    IXFK220N17T2

    Abstract: IXFX220N17T2 PLUS247 DS100230
    Contextual Info: Advance Technical Information IXFK220N17T2 IXFX220N17T2 GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 = = 170V 220A Ω 6.3mΩ 140ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions


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    ixfk220n17t2ixfx220n17t2140nso-264+3220n17t2plus247ds100230 PDF

    Contextual Info: Preliminary Technical Information GigaMOSTM Trench HiperFETTM Power MOSFET VDSS ID25 IXFK360N10T IXFX360N10T 100V 360A Ω 2.9mΩ 130ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions


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    ixfk360n10tixfx360n10t130nso-264+1360n10t PDF

    Contextual Info: Advance Technical Information GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 IXFK360N15T2 IXFX360N15T2 150V 360A Ω 4.0mΩ 150ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions


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    ixfk360n15t2ixfx360n15t2150nso-264+1360n15t2 PDF

    Contextual Info: Advance Technical Information GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 IXFK240N15T2 IXFX240N15T2 150V 240A Ω 5.2mΩ 140ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions


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    ixfk240n15t2ixfx240n15t2140nso-264+1240n15t2 PDF

    Contextual Info: Preliminary Technical Information IXFK360N10T IXFX360N10T GigaMOSTM Trench HiperFETTM Power MOSFET VDSS ID25 = = 100V 360A Ω 2.9mΩ 130ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions


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    ixfk360n10tixfx360n10to-264130ns+1360n10t PDF

    ixfx420n10t

    Abstract: IXFK420N10T MOSFET 60V 210A PLUS247
    Contextual Info: Advance Technical Information IXFK420N10T IXFX420N10T GigaMOSTM Trench HiperFETTM Power MOSFET VDSS ID25 = = 100V 420A Ω 2.6mΩ 140ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions


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    ixfk420n10tixfx420n10t140nso-264+3420n10tmosfet 60v 210aplus247 PDF

    IXFK230N20T

    Abstract: IXFX230N20T PLUS247 ixfk23 230N20T
    Contextual Info: Advance Technical Information IXFK230N20T IXFX230N20T GigaMOSTM Power MOSFET VDSS ID25 = = 200V 230A Ω 7.5mΩ 200ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings


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    ixfk230n20tixfx230n20t200nso-264+3230n20tplus247ixfk23 PDF

    Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFK20N120P IXFX20N120P VDSS ID25 = 1200V = 20A Ω ≤ 570mΩ ≤ 300ns RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr TO-264 (IXFK) Symbol Test Conditions Maximum Ratings


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    ixfk20n120pixfx20n120p300nso-264+2plus24720n120p PDF

    Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFK30N110P IXFX30N110P VDSS ID25 = = 1100V 30A Ω 360mΩ 300ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings


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    ixfk30n110pixfx30n110p300nso-264+130n110p PDF

    IXFK160N30T

    Contextual Info: Advance Technical Information GigaMOSTM Power MOSFET VDSS ID25 IXFK160N30T IXFX160N30T = = 300V 160A Ω 19mΩ 200ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS


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    ixfk160n30tixfx160n30t200nso-264+1160n30t PDF