FA SOS Search Results

FDC37C65

Abstract: fdc37c65c IBM Floppy Single Density PD780 NEC PD780
Contextual Info: STANDARD MICROSYSTEMS CORPORATION. FDC37C65C + PRELIMINARY COMPONENT PRODUCTS DIVISION r 80 Artav Orive. Hauooauge. NY 11788 15161 435-6000 Fa* <516 2Î1 -6004 2.88MB Floppy Disk Controller FEATURES • • • • • • • • • • • • • •

Contextual Info: F30S54/F30S57 Monolithic Serial Interface CMOS CODEC/FILTER FA IR C HILD A Schlumberger Company Preliminary Advanced Signal Processing Division Description Connection Diagram Top View The F30S54, F30S57 family consists of fj-law and A-law monolithic PCM CODEC/FILTERS utilizing the A /D and

D2030* equivalent

Abstract: F0127 F-Q127 P0127
Contextual Info: Sem eiab is pleased to announce a new range o f surface-m ount RF^SOSFEFs in the F-0127 package to com plem ent its existing range in the fa m ilia r SO8 package, The F-Q127 package o ffe rs several benefits to users com pared w ith the SOB package: • Easter attachm ent to a PCB

PMC-SIO

Abstract: "network interface cards"
Contextual Info: PRELIMINARY S/UNI-622-MAX PM! P M C -Sierra, Inc. PM 53 5 6 S/UNI-622-MAX DATASHEET PMC-980589 ISSUE 4 SA TURN USER NETWORK INTER FA CE 622-MAX PM5356 mm S/UNI-622-MAX SATURN USER NETWORK INTERFACE (622-MAX) DATASHEET PRELIMINARY ISSUE 4: JANUARY 1999 PMC-Sierra, Inc.

F30S60

Contextual Info: F30S64/F30S67 Monolithic Serial Interface CMOS CODEC/FILTER FA IR C H ILD A S chtum berger C om pany Preliminary Advanced Signal Processing Division Description Connection Diagram Top View The F30S64, F30S67 fam ily consists of /J-law and A-law m onolithic PCM C O D EC/FILTERS utilizing the A /D and

L14H2

Abstract: L14H1 L14F1 npn photo transistor l14h4 AA 4N35 h11 bulb 2N5777 L14F2 photo transistor L14F1 H11A3
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FA LL RISE MAX. MIN. MAX. PEA K EMISSION W AVELEN G TH TIME TIME Vp @ Pd PO@ lp=100mA lp= 100mA TYP. n. M ETER S TYP. n. SEC. T YP . n. SEC . mW

DM50L

Abstract: RS231 RDAT212 LG 1311 STC polarized capacitor MZ 043
Contextual Info: PM _ D a ta s h e e t • I / l ^ PMC-931127 ISSUE 5 PMC-Sierra, Inc. PM7375LASAR-155 LOCAL ATMSAR&PHYSICAL LAYER PM7375 LOCAL ATM SEGMENTATION AND REASSEMBLY & PHYSICAL LAYER IN TER FA C E DATA SHEET Issue 5: May, 1997 PMC-Sierra, Inc. 105-8555 Baxter Place, Burnaby, BC Canada V5A 4V7 604 415-6000

Contextual Info: H FA 3 fi24 h a r r is Ê S E M I C O N D U C T O R Ê Ê M W • 2.4GHz Up/Down Converter December 1997 Features Description • Complete Receive/Transmit Front End The Harris 2.4GHz PRISM chip set is a highly integrated fivechip solution for RF modems

INTEL PLD910

Abstract: intel iPLD910 ipld910 eprom connection ep910a 85C090 IPLD910-12 DPLD910 intel PLD
Contextual Info: in t e i. ÌPLD910 FA ST 24-MACROCELL CMOS PLD Function, Pin, and JEDEC Compatible with EP900, EP910.EP91QA, 85C090 and 5C090 • tpo 12 ns, 62.5 MHz w/Feedback, Clock to Output 8 ns ■ Ice = 150 mA Max @ 1 MHz ■ Programmable Low-Power Option for “Standby” Operation; 60 ju,A Typ. in

Contextual Info: t- K U ^ P -P * # -!' V 'o m . U tipe Super Fast Recovery Diode Twin Diode m tW T tfe m D10LC20U OUTLINE DIMENSIONS Case : ITO-220 U n it:m m 200V 10A •ß y -fx •trr35ns •7JIÆ-JI/I-* •S R W 5 m yo-n •m m . OA. sto • » s . s s . fa - I-* rn RATINGS

Contextual Info: i I N i dodurarat k too proporiy o f Amphond Ooiporallon and k i too Mprara oondBon H i k not to bo d ko kn d. n n d y tk otioto or to p a t fa r monutaotura o r M k tv m u m 3 tm ttoo -Jorporatten otonot bn prfar coneortV * toot no right k granted

3610kl

Abstract: TR-64
Contextual Info: DC 3 6 1 OKL S eries INMB fa n TECHNOLOGIES INC. FEATURES: Size 3.62 in sq. X 0.98 in 92mm sq. X 25mm A irflow 27 - 55 CFM ROTATION W eight 3.5 oz (100g) Noise 23 - 39 dBA Lead W ire A W G 24, Red/Black, UL1007, CSA TR-64 Terminal 0 .1 10 in Rib type only (LOO)

3900l

Contextual Info: Panasonic ÿ7 V t " V ttA lu m in iu m Electrolytic Capacitors/FC n y ^ y tt Series: FC Type: A Radial Leads Style: 0 4 /J IS C 5 1 4 1 z « ilfln n Low impedance High Reliability Japan For Power Supply Features • 4# M • FA-> 'J - X t • 4 > tf - fT y X

2561 d

Abstract: 5537M 2561d
Contextual Info: Signetics 5537 Sample-and-Hold Amplifier Product Specification Military Linear Products DESCRIPTION Tha 5 537 m o no lith ic sa m pla-and-hold a m plifier co m bin e s the b e st fe a tu re s of ion-im planted J F E T s w ith b ip o lar devices to obta in high accuracy, fa st acquisition

C1213

Abstract: SMD 2X C15 ST 0603 smd NEOHM SM 1k5 D0216AA C1619 SMA6032 SM 0603
Contextual Info: STEVAL-ISAG26V1 BOM LIST R e fe re n c e V alue M a n u fa c tu re r P ackage S u p p lie r R1 1kü Neohm SMD 0603 IFARCAD R2 1kü Neohm SMD 0603 IFARCAD R3 4K7 R4 2k7 Neohm SMD 0603 IFARCAD R5 On Neohm SMD 0603 IFARCAD R6 N.C. Neohm SMD O S O 3 IFARCAD R7

2n3053A complementary

Abstract: 40362 2N4036 BUX40A 40319 2n4314 2N1893 2N2102 2N2270 2N3053
Contextual Info: THOflSON/ D IS T R IB U T O R SÔE D • =102^073 000572b OflO ■ TCSK Bipolar Power Transistors High-Speed Switching h p E at V c e “ 10V V c E » a t 'V C u rren t - mA T yp e No. v CEO<su9> V vc er (* u ) Pt w V 7W max 2N2102 FA M ILY (n-p-n) 2N697

cy 6700

Contextual Info: Vliniature i l * I 1 t u 4", W ide In p u t Voltage Range V-JbVdt, 18 72Vdc Regulated DC/DC Converters 7.5 Watt FEATURES: • W id e Input V o lta g e R an ge •L o w Profde P a ck a g e (1 ” x 2" x 0 .4 ” ) • I n p u t /O u tp u t Isolation •E fficien cy up to 8 6 % fa FL

Contextual Info: DESCRIPTION R E VISIO N S MADE FROM CHANGES ££ S-?33<2> AT O S /3 A/O IX 7 S ' , 6 V /S& \JHP> <?3 4 P / f 7b <?- cT/v /a/sz.£ S>$U& SG-ZZ3 QC>C>&? C,KJ Z & I G 3 <L tAJ Z ^ M A y S 4 cfsi a a is o c AM D \1AU & & 4 /4-4 O.PSS. fa A/SZ£-s y/o7 - ^ s " . '

CA91C078

Abstract: xod8 Q00h SCV-64
Contextual Info: O p e n b u s In t e r fa c e C o m p o n e n t s SCV64 User Manual Issue 1 * / bSflfllDl 0 0 0 2 4 0 0 134 T he inform ation in this docum ent is subject to change w ithout notice and should not be construed as a com m itm ent by N ew bridge M icrosystem s. W hile reasonable precautions have been taken, Newbridge

2n3866 sos

Contextual Info: _LT1010 T ECHNO LO G Y Fast ± 150mA Power Buffer FC A TU R 6 S D € S C R IP T IO n • 2 0 M H z Bandw idth T h e L T 10 10 is a fa s t, unity-gain b u ffer that can increase ■ 75VI/ js Slew Rate the o u tp u t capability o f existing IC o p am ps by m ore than

Contextual Info: IN i dooumwl k fw proprak o f kn phoocl Ooiporallow o*d k i I k M prara oondBon W l k aot to bo dko knd . n n d y tk to o k or to p a t fa r monutaotura or M k to o « m S ta r to n ., SorporaMM oM not to prior oom ort, * < M m rig ht k granted to d tr to uoo mg kforraokra k k k d r a w l_

2N5779

Abstract: L14H4 photo transistor 2n5777 L14f1 photo transistor 2N5777 H15A1 photo transistor L14F1 2N5780 opto 4n25 4n35 1327
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS GE TYPE FA LL R IS E M AX. M IN . M A X . P E A K E M IS S IO N W A V ELEN G TH T IM E T IM E Vp @ Pd PO@ NO. lp = 1 0 0 m A lp = 1 0 0 m A T Y P . n. M E T E R S T Y P . n. S E C . T Y P . n. S E C . mW PAGE M A X . Ip CO NT.

PD7228AG

Abstract: lina CS-7 c4111 upd7228 D7228A 101 R15 N 101 JT IC FIP 7B 83 16F NEC PD7228 uPD7228A
Contextual Info: ^ . — 5 1 . S / — h m os jm m sb M O S Integrated Circuit « P D 7228A 7 "7 7 ' J U L C D 3 v h □ — 7 / K - fa ^PD7228Ali, K v I- • v \ I ?,7 j& < n 8, 16 « » S IL C D £ v -f J> nyn-bvt»-£O T-l' > 9 7 x - * t » 8 6 £ T ^ T }# o T l v & L C D □ > h 0 - 7 / K v - f A ' T T o

2242A

Abstract: 2242B IC 4018 DATA C2242
Contextual Info: F A I R C H I L D 2242 A / T M C 2242B s e m ic o n d u c t o r TMC tm w w w .fa irc h ild s e m i.c o m Digital Half-Band I n t e r p o l a t i n g / D e c i m a t i n g Filter 12 - bi t l n / 1 6 - b i t O u t , 60 M H z Features • TMC2242A and TMC2242B are pin-compatible with