F422
Abstract: F423 F421 F-423 ir f422 UFNF422
Contextual Info: UNITRODE CORP 9347963 TS UNITRODE CORP DE 1 ^ 3 4 7 ^ 3 92D 10875 UFNF420 UFNF421 UFNF422 UFNF423 POWER MOSFET TRANSISTORS 500 Volt, 3.0 Ohm FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability
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d01gfl75ufnf420ufnf421ufnf422+6ufnf423f422f423f421f-423ir f422
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transistor f421
Abstract: F421 Transistor f421
Contextual Info: BF421 BF423 SILICON EPITAXIAL TRANSISTORS P-N-P transistors in plastic T O -9 2 package p rim a rily intended fo r class-B video o u tp u t stages in co lou r television and professional m o n ito r eq uip m ent. N-P-N com plem ents are B F 4 2 0 and B F 4 2 2 .
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bf421bf423transistor f421f421 transistor+1f421
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SGSF32
Abstract: transistor f421 F421 Transistor
Contextual Info: 7 T 2 T B 3 7 o o a ' î i s a i m SGSF321/IF321 SGSF421/IF421 SGS-THOMSON [i$ 0 g ^ ( 5 i[ L [ i( g T O ( M ( g S S G S-THOMSON 3GE » FASTSWITCH HOLLOW-EMITTER NPN TRANSISTORS • HIG H SW IT C H IN G SPEED NPN PO W ER TRANSISTORS ■ HOLLOW EMITTER TECHNOLOGY
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sgsf321/if321sgsf421/if42170khz500ms+3sgsf32transistor f421f421 transistor
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tr f422
Abstract: F422 F423 UFNF422 ufnf420 F421
Contextual Info: POWER MOSFET TRANSISTORS [J ™? 500 Volt, 3.0 Ohm UFNF422 UFNF423 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rdsioih and a high transconductance. FEATURES • Fast Switching
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ufnf422ufnf423ufnf420ufnf421+4tr f422f422f423f421
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transistor f421
Abstract: SGSF421
Contextual Info: SGSF321IF321 SGSF421/IF421 SGS-T110MS0N FASTSWITCH HOLLOW-EMITTER NPN TRANSISTORS • HIGH S W ITC H IN G SPEED NPN POWERTRANSISTORS ■ HOLLOW EMITTER TECHNOLOGY ■ HIGH VOLTAGE FOR OFF-LINE APPLICA TIONS ■ 70kHz SWITCHING SPEED • LOW COST DRIVE CIRCUITS
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sgsf321if321sgsf421/if421sgs-t110ms0n70khz+6o-220att220140wto500mstransistor f421sgsf421
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F421
Abstract: IRF423
Contextual Info: iH A R R is IRF420, IRF421, IFJF422 IF^F423 s e m i c o n d u c t o r 2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2.2 A and 2.5A, 450V and 500V • Majority Carrier Device These are N-Channel enhancement mode silicon gate
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irf420irf421ta17405ifjf422+4rf422rf423f421irf423
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F422
Abstract: transistor f422 PD65010 F922 F962 F715 F981 IC pd65000 F746 F744
Contextual Info: N E C ELECTRONICS INC 72 NEC N E C Electronics Inc. DE I b427525 000Ö275 □ | T-4 2-1 1 -0 9 //PD65000 CMOS-2 S E R IE S 3-MICRON CMOS GATE A R R A YS c April 1985 Description Figure 1. C M O S Gate Array Chip Layout Figure 2. Cell Configured as a Two-Input
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b427525upd65000the//pd65000t-42-11-09+15//pd65000//pd65003jupd65002fipd65010jupd65020f422transistor f422pd65010f922f962f715f981 icpd65000f746f744
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b556
Abstract: PD67000 2222 kn a PD67030 B558 pd67020 F314 AN b559 F304 F424
Contextual Info: N E C 6427S2S N E C ELECTRONICS INC TÖ Ô Ê | L.M275ES QQlTTñM fl J ~ D V - ^ /Z - ìS ' Bi-CMOS-4 ADVANCED PROCESS b ì-c m o s g a t e a r r a y s ELECTRONICS INC 98D 17984 NEC Electronics Inc. February 1988 Description Features The Bi-CM O S-4 gate arrays feature the high speed of
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6427s2sm275esbm27525i7993+11t-45w/-/5b556pd670002222 kn apd67030b558pd67020f314 anb559f304f424
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pin diagram of full adder using Multiplexer IC
Abstract: tr f422 UPD65000 fj01 F713 f422 F715 PD65080 F-661 F-642
Contextual Info: N E C ELECTRONICS INC 7 5 D E ] b4E75B5 ODDfiBlfi 3 SEC NEC Electronics Inc. T-42-11 09 % ¿tPD65000 CMOS-3 SERIES cm os g a te a r r a y s 2 -m ic ro n January 1985 Description The//PD65000 (CMOS-3) series of gate arrays are lowpower, high-speed devices featuring 2-micron silicon
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b4e75b5t-42-11upd65000necel-000246-0185+9pin diagram of full adder using multiplexer ictr f422fj01f713f422f715pd65080f-661f-642
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f422
Abstract: transistor f422 F981 IC F421 4-bit even parity using mux 8-1 transistor f421 transistor f423 4-bit odd parity using mux 8-1 F423 PD65003
Contextual Info: NEC NEC Electronics Inc. /¿ P D 6 5 0 0 0 C M O S -2 SER IES 3-M IC R O N CM OS G A T E A R R A Y S April 1985 D e sc rip tio n The/iPD65000 (CMOS-2) series of gate arrays are lowpower, high-speed devices featuring 3-mlcron silicon gate CMOS technology. The basic cell on the chip
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upd65000//pd65003jupd65002fipd65010+16jupd6502016-pin18-pin20-pin24-pin28-pinf422transistor f422f981 icf4214-bit even parity using mux 8-1transistor f421transistor f4234-bit odd parity using mux 8-1f423pd65003
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transistor f422 equivalent
Abstract: transistor f422 thomson CRT COLOUR TV SCHEMATIC DIAGRAM z80 ef9345 EF9345 TDA 9345 EF9367 TGS 813 difference between intel 8085 and motorola 6800 EF9345P
Contextual Info: GRAPHIC PROCESSORS DATABOOK 1st EDITION MARCH 1989 TABLE OF CONTENTS INTRODUCTION Page 4 GENERAL INDEX 5 PRODUCT GUIDE 7 ALPHANUMERICAL and SEMI-GRAPHIC CRT CONTROLLERS 11 GRAPHICS CONTROLLERS 105 COLOR PALETTE 213 APPLICATION NOTES 247 3 INTRODUCTION The SGS-THOMSON Graphics data book contains comprehensive data on three
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transistor f422 equivalenttransistor f422thomson crt colour tv schematic diagramz80 ef9345+6ef9345tda 9345ef9367tgs 813difference between intel 8085 and motorola 6800ef9345p
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upd6500
Abstract: F922 uPD65007 F981 IC tr f422 F661 CMOS GATE- NEC f422 f962 f791
Contextual Info: SEC CMOS-4L 1.5-M ICRON LOW-VOLTAGE CMOS GATE ARRAYS NEC Electronics Inc. February 1990 Description Figure 1. Sample CMOS-4L Packages NEC’s CMOS-4L family of 1.5-micron gate arrays are high-density, low-voltage application-specific integrated circuits ASICs that offer unique solutions for batterydriven circuits. Supply voltages ranging from 1.0 V to 5.5
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upd6500f922upd65007f981 ic+6tr f422f661cmos gate- necf422f962f791
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thomson CRT COLOUR TV SCHEMATIC DIAGRAM
Abstract: z80 ef9345 SS 1091 asn EF9367 transistor f422 equivalent marking codes transistors SSs processor 8035 practical circuits TDA 9345 EF9345FN EF7910
Contextual Info: GRAPHIC PROCESSORS DATABOOK 1st EDITION GRAPHIC PROCESSORS DATABOOK 1st EDITION MARCH 1989 TABLE OF CONTENTS INTRODUCTION Page 4 GENERAL INDEX 5 PRODUCT GUIDE 7 ALPHANUMERICAL and SEMI-GRAPHIC CRT CONTROLLERS 11 GRAPHICS CONTROLLERS 105 COLOR PALETTE 213 APPLICATION NOTES
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thomson crt colour tv schematic diagramz80 ef9345ss 1091 asnef9367+6transistor f422 equivalentmarking codes transistors sssprocessor 8035 practical circuitstda 9345ef9345fnef7910
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F483
Abstract: f422 b0w4 NEC VOLTAGE COMPARATOR IC LIST F-637
Contextual Info: SEC V CMOS-5R 1.2-MICRON CMOS GATE ARRAYS NEC Electronics Inc. PRELIMINARY January 1990 Description Figure 1. Package Photo N EC 's C M O S -5R fa m ily com bines preconfigured static RAM blocks w ith a standard gate array architecture. By integrating m em ory and gate array logic on a single IC, the
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16k-bit64k-bitip-8001f483+4f422b0w4nec voltage comparator ic listf-637
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ru4f
Abstract: F422 F423 rj8b "Single-Port RAM" TT 2246 RU89 BE09 L737 f425
Contextual Info: *,yt * *W¿ NEC NEC Electronics Inc. C M O S -6 /6 A /6 V /6 X 1 .0 -M IC R O N C M O S G A TE A R R A Y S April 1992 Description Figure 1. Sample CMOS-6/6A/6V/6X Packages NEC’s CMOS-6 gate array fam ilies CMOS-6, CMOS6A, CMOS-6V and CMOS-6X are ultra-high perform
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ieu-7922ip-8090ru4ff422+8f423rj8bsingle-port ramtt 2246ru89be09l737f425
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65630
Abstract: RK4B 83nr-7843b ru4f RJ49 RJ4B NEC uPD 65658 transistor f423 F423 L442
Contextual Info: *,yt * *W¿ NEC C M O S -6 /6 A /6 V /6 X 1 .0 -M IC R O N C M O S G A TE A R R A Y S NEC Electronics Inc. April 1992 Description Figure 1. Sample CMOS-6/6A/6V/6X Packages NEC’s CMOS-6 gate array fam ilies CMOS-6, CMOS6A, CMOS-6V and CMOS-6X are ultra-high perform
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ieu-7922ip-809065630rk4b+883nr-7843bru4frj49rj4bnec upd 65658transistor f423f423l442
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D65806
Abstract: 9215K1
Contextual Info: tFEB i 7 1993 CMOS-8 5 VOLT, 0 .65-MICRON CMOS GATE ARRAYS NEC Electronics Inc. Prelim inary January 1993 Figure 1. Sample CMOS-8 Packages Description NEC’s 5-volt CMOS-8 family are ultra-high performance, sub-m icron gate arrays, targe te d fo r a pp lications
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J18M
Abstract: itt 2222 marking code F302 L-423 d 65632 "Single-Port RAM" marking L442 em 288 NEC uPD 65658 RU4D
Contextual Info: <S *W¿ NEC C M O S -6 /6 A /6 V /6 X 1 .0 -M IC R O N C M O S G A TE A R R A Y S NEC Electronics Inc. April 1992 Description Figure 1. Sample CMOS-6/6A/6V/6X Packages NEC’s CMOS-6 gate array fam ilies CMOS-6, CMOS6A, CM OS-6V and CMOS-6X are ultra-high perform
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j18mitt 2222marking code f302l-423+6d 65632single-port rammarking l442em 288nec upd 65658ru4d
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D65842
Abstract: diode ru4d 136-Pin CMOS7 BV09 180 nm CMOS standard cell library Synopsys
Contextual Info: SEC CMOS-8L 3-VOLT, 0.50-M ICRON CMOS GATE ARRAYS NEC Electronics Inc. Prelim inary Description O cto b er 1992 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family are ultra-high perform ance, sub-micron gate arrays, targeted for applications
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jpd65800d65842diode ru4d136-pin+3cmos7bv09180 nm cmos standard cell library synopsys
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D65806
Contextual Info: W So 1393 C M O S -8 5 -V O L T , 0 .6 5 -M IC R O N CM OS GATE ARRAYS NEC NEC Electronics Inc. April 1993 Description Figure 1. Sample CMOS-8 Packages NEC’s 5-volt CMOS-8 family are ultra-high performance, s u b -m ic ro n gate a rra y s , ta rg e te d fo r a p p lic a tio n s
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bv0T
Abstract: F423 FV06 RJ4B 83YL-9164B "Single-Port RAM" B00J transistor f423 bewf diode ru4d
Contextual Info: CMOS-8L 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family consists of ultra-high performance, sub-micron gate arrays, targeted for applications requiring extensive integration and high
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50-micronpd658xxbv0tf423+8fv06rj4b83yl-9164bsingle-port ramb00jtransistor f423bewfdiode ru4d
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bv0T
Abstract: 658X
Contextual Info: N E C ELECTRONICS INC b7E D • b4E75S5 QQ3T701 4bD HINECE CMOS-8L 3 -V O LT, 0.50-M IC R O N cm os g a te a r r a y s ä I M t L NEC Electronics Inc. P re lim in a r y Description October 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family consists of ultra-high per
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b4e75s5qq3t701npd658xxbv0t+1658x
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transistor f422
Abstract: transistor f423 f422 transistor transistor f421 BV09 F423 fet 13187 RJ4B L442 bvoe
Contextual Info: CMOS-8LCX 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family consists of ultra-high performance, sub-micron gate arrays, targeted for
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50-micronpd658xxtransistor f422transistor f423+8f422 transistortransistor f421bv09f423fet 13187rj4bl442bvoe
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transistor f422
Abstract: transistor f423 F422 transistor transistor f421 nec product naming rule BK-DK
Contextual Info: i O 1993 iir n r, . . NEC E le ctro n ics Inc. Prelim inary Description CMOS-8LCX 3-VOLT, 0.50-M ICRON CMOS GATE ARRAYS c ro s s c h e c k te s t s u p p o rt February 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family are ultra-high perform
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ipd658xxtransistor f422transistor f423f422 transistor+3transistor f421nec product naming rulebk-dk
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