F121 Search Results

L500

Abstract: D620
Contextual Info: A - B RI G H T Part No. 500x10mm A-BRIGHT INDUSTRIAL CO., LTD. AB-F1214R60-TOP-6 30PCS LED STRIP „ Product Photo: „ Features: ● ● ● ● ● ● LED power : 2.4 W. Dimension : L500 x W10mm. Emitted color : Red. Chip material : AlGaInP. High luminance, Lower power consumption.

SMF635-F1210

Contextual Info: Request a Quote | Ask an Engineer Image description. Print this Sheet End of image description. Image description. as PDF EndSave of image description. SMF635-F1210 12 GHz to 18 GHz Broadband PAC ISOLATORS & CIRCULATORS Specifications RF Frequency Isolation

SMF635-F1210

Contextual Info: Broadband PAC Isolators & Circulators SMF635-F1210 12 GHz to 18 GHz Specifications RF Frequency Isolation Insertion Loss VSWR Peak Power Average Power Package Size Environmental Notes Specifications subject to change without notice Mica Microwave | Manteca, CA | 1-209-825-3977 | www.Mica-MW.com

F1210

Contextual Info: polyfet rf devices F1210 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

L500

Abstract: W10M
Contextual Info: A - B RI G H T Part No. 500x10mm A-BRIGHT INDUSTRIAL CO., LTD. AB-F1214B60-TOP-6 30PCS LED STRIP „ Product Photo: „ Features: ● ● ● ● ● ● LED power : 2.4 W. Dimension : L500 x W10mm. Emitted color : Blue. Chip material : InGaN. High luminance, Lower power consumption.

L500

Contextual Info: A - B RI G H T Part No. 500x10mm A-BRIGHT INDUSTRIAL CO., LTD. AB-F1214G60-TOP-6 30PCS LED STRIP „ Product Photo: „ Features: ● ● ● ● ● ● LED power : 2.4 W. Dimension : L500 x W10mm. Emitted color : Green. Chip material : InGaN. High luminance, Lower power consumption.

L500

Contextual Info: A - B RI G H T Part No. 500x10mm A-BRIGHT INDUSTRIAL CO., LTD. AB-F1214V60-TOP-6 30PCS LED STRIP „ Product Photo: „ Features: ● ● ● ● ● ● LED power : 1.5 W. Dimension : L500 x W10mm. Emitted color : Warm White. Chip material : InGaN. High luminance, Lower power consumption.

Contextual Info: POLYFET R F DEVICES 47E D • 7 a i l D m OOOOGflH ñ ■ PLYF -T-39-01 POLYFET RF DEVICES F1215 PATENTED GOLD METALIZED SILICON RF POWER MOSFET General Description Silicon vertical DMOS designed specifically for RF applications. Immune to forward and reverse

Contextual Info: polyfet rf devices F1210 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended

F1200U

Contextual Info: T1 3mm Sub-Midget Based LEDs S u b m in ia tu re P a c k a g e s 660nm Ultra Red GaAIAs/GaAIAs j ^ - .4 2 9 ^ > j ^ Center Contact F121 Ceramic Base ^F 1 20 612nm Super Orange InGaAlP F121 h: .157 Dia \— Center Contact FF120 595nm Super Yellow InGaAlP | < - .429

Contextual Info: REVISIONS GSD CHANGES CN 35361 D REDRAWN KH 07/11/94 I CO I CN 36639 C CD KH cm 11/09/95 I o CD KAM0936 4:1 SCALE APPROX s u r f a c e a r e a WAS: E-9843 USED o n REF: DIGITAL DWG. f121?979°0°0 REV. A RECEPTACLE, PCB, TNC MOUNTING HOLE MOUNTING PATTERN

f1210

Contextual Info: Miniature SMT Power Inductor EPI F1210 Series ELECTRONICS INC. V Features of the EPI “F1210” Series of Miniature SMT Power Inductors µSec. • Virtually no limit on V µSec as long as max. RMS Current Limit • and Temperature Rise Limit are not exceeded

F1214

Contextual Info: polyfet rf devices F1214 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

TCXO

Abstract: TCXO-F100 F102 F101 F111 F112 F121 F122 crystal 10 MHz 1X107
Contextual Info: ROHS-Compliant Product TCXO-F100 Series 1. Specification Type: F101 F121 F111 F102 F122 F112 Frequency range: 5 . 35 MHz 3 kHz- 5 . 35 MHz 35MHz Frequency stability vs. temp. - 40°C . + 80°C: < + 2 ppm Frequency stability vs. supply changes UB ± 5 %:

F1215

Abstract: SMF635-F1215
Contextual Info: Communications PAC Isolators & Circulators SMF635-F1215 12.2GHz to 12.75GHz Specifications RF Frequency Isolation Insertion Loss VSWR Peak Power Average Power Package Size Environmental Notes Specifications subject to change without notice Mica Microwave | Manteca, CA | 1-209-825-3977 | www.Mica-MW.com

Contextual Info: Request a Quote | Ask an Engineer Image description. Print this Sheet End of image description. Image description. as PDF EndSave of image description. SMF635-F1215 12.2 GHz to 12.75 GHz Communications PAC ISOLATORS & CIRCULATORS Specifications RF Frequency

ec62

Abstract: Wistron Corporation SJV50 wistron SW-TACT-119-GP F1214
Contextual Info: 5 4 3 2 1 D D Power Button KBC_PWRBTN#_1 CN1 PWRSW1 3 KBC_PWRBTN#_1 EC62 DY 5 SCD1U16V2ZY-2GP 1 1 3 1 2 4 2 2 4 PTWO-CON2-3-GP KBC_PWRBTN#_1 SW-TACT-119-GP 20.F1214.002 TP1 1 AFTE14P-GP 62.40009.671 C C TP2 1 AFTE14P-GP H1 HOLE B 1 B SJV50 Wistron Corporation

Contextual Info: F1210A Surface Mount Glass Passivated Standard Rectifier Reverse Voltage 1000V Forward Current 1.2A Features • • • • • • • • Glass passivated Standard Rectifiers Very low profile - typical height of 1.0 mm Low forward voltage drop

Contextual Info: F1210A Surface Mount Glass Passivated Standard Rectifier Reverse Voltage 1000V Forward Current 1.2A Features • • • • • • • • Glass passivated Standard Rectifiers Very low profile - typical height of 1.0 mm Low forward voltage drop

Contextual Info: polyfet rf devices F1214 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1111 process features gold metal for greatly extended

Q68000-A8370

Abstract: CGY MW
Contextual Info: GaAs Components Alphanumeric Type Index 12 Alphanumeric Type Index GaAs RF-Transistors, MMICs and Modules Type Marking Ordering Code Package Page BGV 503 BGV 503 Q62702-L0132 P-TSSOP-10-1 170 BGV 903 BGV 903 Q62702-L0131 P-TSSOP-10-1 170 CF 739 MSs Q62702-F1215

Contextual Info: polyfet rf devices F1210 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

Contextual Info: polyfet rf devices F1214 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

L500

Abstract: storage-temperature
Contextual Info: A - B RI G H T Part No. 500x10mm A-BRIGHT INDUSTRIAL CO., LTD. AB-F1214Y60-TOP-6 30PCS LED STRIP „ Product Photo: „ Features: ● ● ● ● ● ● LED power : 2.4 W. Dimension : L500 x W10mm. Emitted color : Yellow. Chip material : AlGaInP. High luminance, Lower power consumption.