L500 Search Results

Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2125 H O R I A O N T A L O U T P U T A P P L I C A T I O N S F O R C O L O R TV & U n it in 3.0±0.3 1 5.5±0.5 gf3.6±0.3 M E D I U M R E S O L U T I O N DISPLAY. . High Voltage :V c b o = L500V . Low SaturationVoltage

L175J

Abstract: L100 L225 L500 L12J27R ohmite L12J33R 476 25k L500J
Contextual Info: 270 Series Vitreous Enamel Power Resistors Series Wattage Ohms L12 12 0.1-51K L25 25 0.15-100K L50 50 0.38-260K L100 100 0.23-101K L175 175 0.13-101K L225 225 0.16-129K L500 500 0.38-218K L1000 1000 0.69-392K Select 270 Type fixed resistors for applications requiring wattage ratings from 12 to 1000

L500

Abstract: D620
Contextual Info: A - B RI G H T Part No. 500x10mm A-BRIGHT INDUSTRIAL CO., LTD. AB-F1214R60-TOP-6 30PCS LED STRIP „ Product Photo: „ Features: ● ● ● ● ● ● LED power : 2.4 W. Dimension : L500 x W10mm. Emitted color : Red. Chip material : AlGaInP. High luminance, Lower power consumption.

W12mm

Abstract: L500
Contextual Info: A - B RI G H T Part No. 500x12mm A-BRIGHT INDUSTRIAL CO., LTD. AB-F2414W60-3TOP-6 15PCS LED STRIP „ Product Photo: „ Features: ● ● ● ● ● ● LED power : 3.6 W. Dimension : L500 x W12mm. Emitted color : White. Chip material : InGaN. High luminance, Lower power consumption.

L5004

Abstract: LNA "D" only
Contextual Info: Delta Datasheet T Te ec ch hn n ii c ca a ll D Da a tt a a o on n D De e ll tt a a M M ii c c rr o ow wa av ve e P P rr o od du uc c tt s s “L” Band Low Noise Amplifier Model L5004-2 Features: Low Noise High Performance Low Cost Large Voltage operation

Contextual Info: Delta Datasheet T Te ec ch hn n ii c ca a ll D Da a tt a a o on n D De e ll tt a a M M ii c c rr o ow wa av ve e P P rr o od du uc c tt s s “L” Band Low Noise Amplifier Model L5003-2 Features: Low Noise High Performance Low Cost Large Voltage operation

L5001

Abstract: DELTA E
Contextual Info: Delta Datasheet T Te ec ch hn n ii c ca a ll D Da a tt a a o on n D De e ll tt a a M M ii c c rr o ow wa av ve e P P rr o od du uc c tt s s “L” Band Low Noise Amplifier Model L5001-2 Features: Low Noise High Performance Low Cost Large Voltage operation

Contextual Info: Delta Datasheet T Te ec ch hn n ii c ca a ll D Da a tt a a o on n D De e ll tt a a M M ii c c rr o ow wa av ve e P P rr o od du uc c tt s s GPS Low Noise Amplifier Model L5008 Features: Low Noise High Performance Low Cost Large Voltage operation Specifications:

Contextual Info: 270 Series Vitreous Enamel Power Resistors Series Wattage Ohms L12 12 0.1-51K L25 25 0.15-100K L50 50 0.38-260K L100 100 0.23-101K L175 175 0.13-101K L225 225 0.16-129K L500 500 0.38-218K L1000 1000 0.69-392K Select 270 Type fixed resistors for applications requiring wattage ratings from 12 to 1000

Contextual Info: FAST RECOVERY, 100ns. HIGH VOLTAGE 40ma, MINIATURE RECTIFIERS 1 INCH MINIMUM LEADS SMALL SIZED MOLDED PACKAGE PRV 3,000 TO 12,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE EDI Type PRV Volts S L300 3,000 S L500 5,000 S L800 8,000 S L1 000 10,000 S L1200

L5008

Abstract: Delta Microwave
Contextual Info: Delta Datasheet T Te ec ch hn n ii c ca a ll D Da a tt a a o on n D De e ll tt a a M M ii c c rr o ow wa av ve e P P rr o od du uc c tt s s L-Band Low Noise Amplifier Model L5008-2 Features: Low Noise High Performance Low Cost Large Voltage operation Specifications:

L5002

Contextual Info: Delta Datasheet T Te ec ch hn n ii c ca a ll D Da a tt a a o on n D De e ll tt a a M M ii c c rr o ow wa av ve e P P rr o od du uc c tt s s “L” Band Low Noise Amplifier Model L5002-2 Features: Low Noise High Performance Low Cost Large Voltage operation

Contextual Info: 3QE D • b457SaS OOETHMB 4 ■ N E C ELECTRONICS INC T'Hl-07 LASER DIODE J N D L5009D 1 310 nm O P T IC A L F IB ER C O M M U N IC A T IO N S InG aA sP D C -P B H LA SER D IO D E DESCRIPTIO N NDL60Q9D is a1310 nm laser diode especially designed for long distance high capacity transmission systems. The DC-PBH

L500

Abstract: W10M
Contextual Info: A - B RI G H T Part No. 500x10mm A-BRIGHT INDUSTRIAL CO., LTD. AB-F1214B60-TOP-6 30PCS LED STRIP „ Product Photo: „ Features: ● ● ● ● ● ● LED power : 2.4 W. Dimension : L500 x W10mm. Emitted color : Blue. Chip material : InGaN. High luminance, Lower power consumption.

L500

Contextual Info: A - B RI G H T Part No. 500x10mm A-BRIGHT INDUSTRIAL CO., LTD. AB-F1214V60-TOP-6 30PCS LED STRIP „ Product Photo: „ Features: ● ● ● ● ● ● LED power : 1.5 W. Dimension : L500 x W10mm. Emitted color : Warm White. Chip material : InGaN. High luminance, Lower power consumption.

.5J3

Abstract: NDL5004 NDL5008
Contextual Info: 30E D NEC • b 457525 002=1537 ^ ELECTRONICS INC LA SER DIODE /_ND L5008 1 200 nm O P T IC A L F IB E R C O M M U N IC A T IO N S InGaAsP DOUBLE HETEROSTRUCTURE LA SE R DIODE D E S C R IP T IO N N L5008 is a long wavelength laser diode especially designed for long distance high capacity transmission systems. The DC*

U501D

Abstract: 74HC4066 EL17-21SYGC U501B EM501 U501C U500A EM500 C5021 V3P3
Contextual Info: 1 2 3 4 5 6 8 7 14 V3P3 U500E RID/NTC BIAS VCC 74HC4066 L500 2 1 V3P3 BLM21AG102SN1D GND 1 C501 2 GND 100N_16V_X7R V_BAT_- V_BAT_V3P3 D502 10MQ060 2 1 4 U500A 74HC4066 1 RID/NTC 2 J500 1 3 BATTERY + 2 5 BATTERY - RID_NTC_A 4 SDA_1_WIRE_A 3 SCL_A 2 BATTERY_A_EN

W12mm

Abstract: L500
Contextual Info: A - B RI G H T Part No. 500x12mm A-BRIGHT INDUSTRIAL CO., LTD. AB-F2414B60-3TOP-6 15PCS LED STRIP „ Product Photo: „ Features: ● ● ● ● ● ● LED power : 3.6 W. Dimension : L500 x W12mm. Emitted color : Blue. Chip material : InGaN. High luminance, Lower power consumption.

Delta Microwave

Contextual Info: Delta Datasheet T Te ec ch hn n ii c ca a ll D Da a tt a a o on n D De e ll tt a a M M ii c c rr o ow wa av ve e P P rr o od du uc c tt s s GPS Low Noise Amplifier Model L5003 Features: Low Noise High Performance Low Cost Large Voltage operation Specifications:

Contextual Info: Ordering num ber: ENN6781 NPN Triple Diffused Planar Silicon Transistor 2SD2650 Color TV Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage V C B O =l500V . • High reliability(Adoption o f HVP process). • Adoption of MBIT process.

EN6101

Abstract: EN610-1
Contextual Info: Ordering number:EN6101 NPN Triple Diffused Planar Silicon Transistor 2SC5443 SAf/YO Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed tplOOns typ . • High breakdown voltage (VCBo=l500V ). • High reliability (Adoption of HVP process).

mc 13500

Abstract: rs tube
Contextual Info: 7552 High-M u Triode CERAMIC-METAL PENCIL TYPE STURDY COAXIAL-ELECTRODE STRUCTURE For Use as a Low-Hoise­ Ampi i f i er Tube in Receiver Applications up to l500Mc under S e v e re Shock and V ib r a t io n FAST WARM-UP TIME GENERAL DATA E le c t r ic a l :

FAH DIODE

Abstract: FAH diode 28
Contextual Info: 3GE D N EC J • b427525 ‘0051240 1 ■ ELECTRONICS INC T^-O? LASER DIODE N D L5 0 0 9 1 3 1 0 nm OPTICAL FIBER C O M M U N IC A TIO N S InGaAsP DOUBLE HETEROSTRUCTURE LASER DIODE DESCRIPTIO N N D L5009 is a long wavelength laser diode especially designed for longdistance high capacity transmission systems. The

Contextual Info: SONY, C X L 5 0 0 1 P / C X L 5 0 0 1 W l| CMOS-CCD 1H Delay Line for NTSC D escrip tio n C X L 5 0 0 1 P /C X L5001M Packge Outline are general purpose delay fine ICs w hich provide 1H delay time Unit: mm CC D o f N TSC . F e a tu re s • Low pow er dissipation 8 0 mW Typ.