R501 Search Results

1000w power amp diagram

Abstract: AZ943 AZ943-1CH-18D AZ943-1CH-12D
Contextual Info: AZ943 15 AMP MINIATURE PC BOARD RELAY FEATURES • • • • • • • High performance Low seated height Flux tight and sealed versions available Class B insulation 130°C standard Class F insulation (155°C) available UL, CUR file E43203 TÜV file R50155373

ZFV-SR10

Abstract: ZFV-A25 ZFV-A10 ZFV-A20 ZFVR5015 robot with camera and sensor smart sensors ZFV-R5025 ZS-XCN ZFV-R5010
Contextual Info: Smart Sensors with Ultra-High-Speed CCD Camera ZFV Series Ordering Information Sets of Sensor Head and Amplifier Unit Type Narrow View/Single Function Narrow View/Standard Wide View/Single Function Wide View/Standard NPN ZFV-R1010 ZFV-R1020 ZFV-R5010 ZFV-R5020

Contextual Info: R5016ANX Nch 500V 16A Power MOSFET Datasheet l Outline VDSS 500V RDS on (Max.) 0.27Ω ID ±16A PD 50W TO-220FM l Inner circuit l Features 1) Low on-resistance.

Contextual Info: defining a degree o f excellence S u r fa c e M o u n t P T C 0805 Chip R0HS6 C o m plian t & Halogen-Free OZCK Series OZCK Oct2013D OZCK Series Fuse HF ^ c « u s Maximum Voltage 6- 15V per table -40°C to 85°C Agency Approval TUV (Std. EN60738-1-1 , Cert. R50102117)

Contextual Info: RZ–1A5 SERIES INDUSTRIAL RELAYS DIMENSIONS Unit: mm UL & CUL File #E256619 TUV File # R50182350 FEATURES • Small size 18.4 x 10.2 x 15.5mm with 5A switching capability for high density PCB Mounting. • Surge voltage: 5000V (between coil and contact).

200D

Abstract: AZ2704 E44211 100G11
Contextual Info: AZ2704 30 AMP POWER RELAY FEATURES • • • • • • Low cost 30 Amp switching Class B insulation system standard, Class F available PC mount 4 kV dielectric Standard 2.4 mm and wide contact gap (3.0 mm) available • UL, CUR file E44211 • TÜV R50164753

Contextual Info: R5016ANX Transistors 10V Drive Nch MOSFET R5016ANX zDimensions Unit : mm zStructure Silicon N-channel MOSFET TO-220FM 10.0 φ3.2 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS)

Contextual Info: R5013ANX Datasheet Nch 500V 13A Power MOSFET lOutline VDSS 500V RDS on (Max.) 0.38W ID 13A PD 50W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.

Contextual Info: Data Sheet 10V Drive Nch MOSFET R5019ANJ  Structure Silicon N-channel MOSFET  Dimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA. 4) Drive circuits can be simple. 5) Parallel use is easy.

R5011ANX

Contextual Info: R5011ANX Datasheet Nch 500V 11A Power MOSFET lOutline VDSS 500V RDS on (Max.) 0.5W ID 11A PD 50W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.

FUSE 1A 0805

Abstract: Hs 1 fuse
Contextual Info: defining a degree of excellence Surface Mount PTC 0805 Chip R0HS6 C o m plian t & Halogen-Free OZCK Series OZCK A pr2013D OZCK Series Fuse HF ^ c « u s Maximum Voltage 6- 15V per table -40°C to 85°C Agency Approval TUV (Std. EN60738-1-1 , Cert. R50102117)

R5011ANX

Contextual Info: R5011ANX R5011ANX Transistors 10V Drive Nch MOSFET R5011ANX zDimensions Unit : mm zStructure Silicon N-channel MOSFET TO-220FM 10.0 φ3.2 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS)

Contextual Info: R5016FNX Data Sheet 10V Drive Nch MOSFET R5016FNX  Structure Silicon N-channel MOSFET  Dimensions Unit : mm TO-220FM φ3.2 10.0 4.5 1.2 1.3 14.0 2.5 8.0 15.0 Features 1) Low on-resistance. 2) Low input capacitance. 3) High ESD. 12.0 2.8 (1) Gate

Contextual Info: 10V Drive Nch MOSFET R5016ANJ Dimensions Unit : mm Structure Silicon N-channel MOSFET LPTS 10.1 0.4 0.78 2.7 5.08 (1) Base (Gate) (1) (2) 1.2 3.0 1.0 1.24 2.54 (3) (2) Collector (Drain) (3) Emitter (Source) Applications Switching Each lead has same dimensions

R5013ANX

Contextual Info: R5013ANX Transistors 10V Drive Nch MOSFET R5013ANX zDimensions Unit : mm zStructure Silicon N-channel MOSFET TO-220FM 10.0 φ3.2 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS)

R5016ANX

Contextual Info: R5016ANX Transistors 10V Drive Nch MOSFET R5016ANX zDimensions Unit : mm zStructure Silicon N-channel MOSFET TO-220FM 10.0 φ3.2 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS)

STR451

Abstract: ic 501 str-451 ic501 C502 STR 451 L501 F-501 d508 SW501
Contextual Info: D150.D151 ,D152,D590 S5566B D501 2DL10 C151 0511 0,0022 STR-451 A A 0.022 IC 501 C509 0.0027/2KV D503 2DL10 D151 C224 X A D152 D502 2DL10 C152 C590 0.022 0.022 C508 f ] R501 C514 0.1/250V R502 R503 1/2W 1/2W T C502 220/500V 1 1 i1 1 1 _ 1 T 1 T RT502 i !

48V 30A SPDT RELAY

Abstract: 48 V coil 30A SPDT RELAY RG 265 2400VA RG Series
Contextual Info: RG SERIES INDUSTRIAL RELAYS UL & CUL File#E256619 TUV certified File #R50179884 The RG Relay series offers 30A switching capacity. DIMENSIONS Unit: mm 3.3 ± 0.5 Single contact RG series relay offers 30A switching capacity. Up to 30A switching. Nominal power 930mW.

R5016ANX

Contextual Info: R5016ANX Transistors 10V Drive Nch MOSFET R5016ANX zDimensions Unit : mm zStructure Silicon N-channel MOSFET TO-220FM 10.0 φ3.2 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS)

Contextual Info: R5016ANJ Transistors 10V Drive Nch MOSFET R5016ANJ zDimensions Unit : mm zStructure Silicon N-channel MOSFET LPTS 10.1 1.3 13.1 9.0 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS)

1c12 relay

Contextual Info: RG SERIES INDUSTRIAL RELAYS UL & CUL File#E256619 TUV certified File #R50182354 The RG Relay series offers 30A switching capacity. DIMENSIONS Unit: mm 3.3 ± 0.5 Single contact RG series relay offers 30A switching capacity. Up to 30A switching. Nominal power 930mW.

Contextual Info: R5011FNX Nch 500V 11A Power MOSFET Datasheet lOutline VDSS 500V RDS on (Max.) 0.52W ID 11A PD 50W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Fast reverse recovery time (trr). 2) Low on-resistance. (1) Gate (2) Drain (3) Source 3) Fast switching speed.

Contextual Info: Data Sheet 10V Drive Nch MOSFET R5016FNX  Structure Silicon N-channel MOSFET  Dimensions Unit : mm TO-220FM φ3.2 10.0 4.5 1.2 1.3 14.0 2.5 8.0 15.0 Features 1) Low on-resistance. 2) Low input capacitance. 3) High ESD. 12.0 2.8 0.8 (1) Gate (2) Drain

AZ756

Contextual Info: AZ756 20 AMP MINIATURE POWER RELAY FEATURES • • • • • Dielectric strength 5000 Vrms Low cost 20 Amp switching — single pole contacts Isolation spacing greater than 8mm UL Class B insulation system standard Class F available • UL, CUR file E43203, TÜV R50156590