F122 Search Results

F1-22

Abstract: TI Assembly Factory Code
Contextual Info: TI 3mm FLANGED BASED LEDs COLOR CODE LEGEND PART NUMBER SELECTION GUIDE OPTIONS SERIES Fl 24 CG5 - 5V - P COLOR -CODE (SEE LEGEND) CODE CR5 CY5 CG5 SER IES 2 MULTICHIP F122 4 MULTICHIP F124 ELECTRICAL C H A R AC TER ISTIC S C O LO R CO D E [2] [5] [7]

Contextual Info: polyfet rf devices F1222 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

Contextual Info: polyfet rf devices F1221 PATENTED GOLD METALIZED General Description Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended lifetime. Low output capacitance

Contextual Info: POLYFET R F DEVICES 47E D • PLYF f -ty-Ctf 7 2 m O D T QDDOOSb 1 ■ POLYFET RF DEVICES F1225 PATENTED GOLD METALIZED SILICON RF POWER MOSFET General Description Silicon vertical DMOS designed specifically for RF applications. Immune to forward and reverse

F1222

Contextual Info: polyfet rf devices F1222 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

Contextual Info: polyfet rf devices F1222 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET ¿P PACKAGE Silicon D M O S designed specifically for R F applications. Immune to forward and reverse bias secondary breakdown "Polyfet"process features gold metal for greatly extended

mw 772

Contextual Info: SIEMENS BF 772 NPN Silicon RF Transistor • For application in TV-sat tuners Q62702-F1222 1 =C II RAs m BF 772 ro ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Type Pin Configuration 3=B 4=E Package SOT-143

TRANSISTOR k 1254

Contextual Info: SIEMENS BF 771 NPN Silicon RF Transistor • For modulators and amplifiers in TV and VCR tuners ESP: Electrostatic discharge sensitive device, observe handling precaution! Ordering Code Pin Configuration BF 771 RBs Q62702-F1225 1 =B Package II CO Marking 2= E

Contextual Info: polyfet rf devices F1221 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

Contextual Info: polyfet rf devices F1220 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS vz Wide Temperature Range series Anii Solvent ft'HUl'e / • Through 200V unly I • F K I ast- sizes nt f122 nr larger • S m a ll ca se sizes as s a m e as VR se rie s, b u t o p e r a tin g o v e r w id e te m p e ra t u r e ra n g e o f — 5 5 ~ + 1 0 5 “C.

TCXO

Abstract: TCXO-F100 F102 F101 F111 F112 F121 F122 crystal 10 MHz 1X107
Contextual Info: ROHS-Compliant Product TCXO-F100 Series 1. Specification Type: F101 F121 F111 F102 F122 F112 Frequency range: 5 . 35 MHz 3 kHz- 5 . 35 MHz 35MHz Frequency stability vs. temp. - 40°C . + 80°C: < + 2 ppm Frequency stability vs. supply changes UB ± 5 %:

Contextual Info: polyfet rf devices F1220 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown " P o l y f e t " p r o c e s s features gold metal for greatly extended

F1221

Contextual Info: polyfet rf devices F1221 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

vbfi

Abstract: sot-23 Transistor MARKING CODE ZG sot-23 MARKING CODE ZG
Contextual Info: SIEMENS BF 771 NPN Silicon RF Transistor • For modulators and amplifiers in TV and VCR tuners ESP: Electrostatic discharge sensitive device observe handling precaution! Type Marking Ordering Code Pin Configuration Package BF 771 SOT-23 RBs Q62702-F1225 1=B

sot marking code ZS

Abstract: BF 145 transistor Q62702-F1225
Contextual Info: BF 771 NPN Silicon RF Transistor • For modulators and amplifiers in TV and VCR tuners ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BF 771 SOT-23 RBs Q62702-F1225 1=B 2=E

mw 772

Abstract: 772 transistor transistor 772 Q62702-F1222 sot marking code ZS BF 145 transistor
Contextual Info: BF 772 NPN Silicon RF Transistor • For application in TV-sat tuners ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BF 772 SOT-143 RAs Q62702-F1222 1=C 2=E 3=B 4=E Maximum Ratings

F1220

Contextual Info: polyfet rf devices F1220 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

8 pin ic 3773

Abstract: C 5763 transistor
Contextual Info: ◆Low Power Consumption : 25 A TYP. ◆Dropout Voltage : 30mA @ 60mV : 100mA @ 200mV ◆Maximum Output Current : 150mA (300mA=XC6209 E to H Types) ◆Highly Accurate :±2% (±30mV less than 1.5V) ◆Output Voltage Range : 0.9V ~ 6.0V (50mV Increments)

A450-FIS

Abstract: F1-8751CXX F1-0031-40C 8122S fixed attenuator sma F1-8228S 8125s A40D-FIS 8222s ATTENUATOR
Contextual Info: The F IS In-Line Fixed Attenuator is built to meet your low reflection attenuation requirements. Each cord is custom built to accommodate up to 10 meters of cable and the connector styles of your choice. The 5dB and 10dB versions hold a +/-.5dB tolerance with the 15dB and 20dB holding a 1dB tolerance. Please specify operating wavelength. The in-line attenuator pro­

transistor pt36c

Abstract: gp714 diode GP113 transistor pt42c diode gp116 GP114 GP021 PT36c gp627 GP111
Contextual Info: OR4E FPGA Ver 2.0 1 4/1/2002 Lattice Semiconductor Corp Series 4 FPGA Evaluation Board Diagram Revision 2.0 OR4E FPGA Ver 2.0 2 4/1/2002 Lattice Semiconductor Corp JTAG Programming Connection J55 Schematic page 4 An 8-pin connection to the JTAG interface used for programming.

PM5357-BI

Abstract: cpci backplane schematic plx vhdl code PCI9050-1 F 1uH smt unimax of thumbwheel switch LT1066 CC621660B PM5357-BI-P
Contextual Info: PMC-Sierra, Inc. PRELIMINARY PM5357 S/UNI-622-POS REFERENCE DESIGN PMC-1981070 ISSUE 2 S/UNI-622-POS REFERENCE DESIGN PM5357 S/UNI-622-POS SATURN USER NETWORK INTERFACE 622-POS REFERENCE DESIGN PROPRIETARY AND CONFIDENTIAL PRELIMINARY ISSUE 2: FEBRUARY 2000

Contextual Info: HV LDF 0.2 % Vishay BCcomponents Ceramic Disc Capacitors Class 2, low loss 500 V, 1 kV, 2 kV and 3 kV FEATURES • High reliability • Low losses D e3 • High capacitance in small size • Kinked leads RoHS • Lead Pb -free available tangent line COMPLIANT

8F124

Contextual Info: • INTL M I C R O C I R C U I T S INC M6E D ■ MflSOmfi O O O O H M O b7H uni SYSTEM CLOCK CHIP IMISC400 CMOS LSI PLL FREQUENCY SYNTHESIZER October 1991 PRODUCT FEA TURES PRODUCT DESCRIPTION Generates all Essential Clock Signals for All-In-One Motherboards.