ET206 50 Search Results

ET206

Contextual Info: ET206 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-3P Features High voltage,High speed switching High reliability Applications Switching regulators Ultrasonic generators High frequency invertors General purpose power amplifiers

et189

Abstract: ET-191 ET-190 ET-382 DTD114E ET227 ET 191 ET-127 ET-378 sw 80 24 v
Contextual Info: - 304 - Ta=25eC, *Ep[ÎTc-25tï gg DTD113E* DTDU3Z* DTD114E* DTD114T* DTD123E* DTD123T* DTD123Y* DTD133H* DTD143E* DTDÎ43T* DTD163T* ET189 ET206 ET383 tiaa4 ET400 ET401 ET403 ET405 ET-102 ET—125 ET—127 ET—188 ET—190 ET—191 ET-212 ET-215 ET-227

ET206

Abstract: ET206 50 A-128 SC-65 T151 T760 T930
Contextual Info: ET206 •&±'<TJ -Y ? > ì> x 9 tM f t t t S TRIPLE DIFFUSED PLANER TYPE . i U HI GH VOLTAGE. HIGH SPEED SWITCHING : O utline D ra w ing s • 4t A : Features • f t f f l j t J E t , H i g h voltage, high speed switching • E jf lf S if High reliability

Contextual Info: ET206 tM TRIPLE DIFFUSED PLANER TYPE « M S. HIGH v o l t a g e , h ig h s p e e d s w it c h in g '• O utline D ra w in g s 2.0 ■ 4 tA : Features • High vo ltage, high speed sw itching • S if t iS 't i High reliability ^Applications 35 Sw itching regulators

ET-191

Contextual Info: K l Power darlington transistors • The DC c u rre n t gain is high, • H ig h ly ve rsatile Dc'vii;« typo Volts Volts V geo sus Volts 60 60 50 7 30 800 3 1.5 — 80 80 80 7 60 2000 3 3 1.0 80 80 80 7 40 1000 3 1.5 1.0 150 100 80 7 25 400 5 2 2.0 VcESO

25c2625

Abstract: 2SC2625 2SC2930 2SC3725 ETG36-040D 1000 volt npn 2sd922 2SC3866 Fuji 2SC2930 npn transistor 2sc2625
Contextual Info: COLLHER S E M I C O N D U C T O R INC MAE D • 22 36 7 1 2 OGDlSflO flOl « C O L Switching fransistors/MOV's ^ ^ SWITCHING TRANSISTORS TQ-220AB kcont. Amps. Max. V ceo sus 3 400 800 250 -8 0 100 200 200 200 200 350 400 400 400 400 300 350 500 80 80 400

2sc2930

Abstract: 2SD930 ET-191 2sc2623 etg36-04 2SC2542 2SC2929 2SC3549 2SD1072 2SD1073
Contextual Info: COLLHER S E M I C O N D U C T O R INC MAE D • 22 36 7 1 2 OGDlSflO flOl « C O L Switching fransistors/MOV's ^ ^ SWITCHING TRANSISTORS TQ-220AB kcont. Amps. Max. V ceo sus 3 400 800 250 -8 0 100 200 200 200 200 350 400 400 400 400 300 350 500 80 80 400

2sc4977

Abstract: transistor 2SC4977 ET-190 2sc3320 transistor 2sC2625 transistor ET391 ET-391 2SC4786 2sc4831 2SC4977 transistor
Contextual Info: FUJI STLSÊirtEDÊ SWITCHING TRANSISTORS Ée "j . '• ï>> I TÉjJii * N fq & zo \ _ < § P". m \k ‘ W » M î» T Is V l IC AMPS Max. 3 5 6 8 VcEoV J sus 800 80 Device Type NPN 2SC3550 180 80 2SD921 800 80 2SC3551 1000* 80 ET383 700 80 2SC3505 Ppc IC AMPS

450 B1

Abstract: 2SD1072 2SD1073 2SD83 2SD916 2SD831 Sc3549 et38s
Contextual Info: §m I Power darlington transistors • T h e DC c u rre n t g a in is h ig h . • H ig h ly v e rs a tile D o v ic i VcBO V cE O V s u s V o lts geo Pc • - r c o n t. A m p s : W a tts hFF m in . ; P ackag e ► le \ .: •■A m ps. VcE ton |j.sec.

transistor m6e

Abstract: ET391 ET1275 2SC3551 equivalent 1SI50A-100 2SB757 ET191 ET367 M101 1S150A-050
Contextual Info: BIPOLAR TRANSISTORS Ratings and Specifications CO LL ME R S E M I C O N D U C T O R INC MAE D Bi 2 2 3 Ö 7 S 2 D 0 0 1 b 0 3 13T H C O L "•pV3>-t3 m Buffer drive tra n sisto rs • Best suited for driving transistor m od ules. • A ll term in a ls are insulated from m ou n tin g plate.

2sc4977

Abstract: transistor 2SC4977 25c2625 2SC2625 2SC2047 2SC4977 transistor ET-191 2SC4795 2SC3320 ET391
Contextual Info: FUJI <S SWITCHING TRANSISTORS B| TO-220AB T O -3 P • t ' 5 /% ■m * 1 * 1 T O -3 P F BBS 1C AMPS Max. 3 80 Device Type NPN 2SC3550 180 80 2SD921 800 80 2SC3551 1000* 80 ET383 V ceoV sus 800 5 Pc W IC AMPS Max. 400 60 Device Type NPN 2SC2929 800 40 2SC3549

2sb757

Abstract: 2SC3551
Contextual Info: « /\°7 —x / W X / Power Devices • / S '7 -h 7 i- iS / K f l'7 Power Transistor (Molded types) r a iÎŒ i li M T .'f y 3 - > ? b ~ 7 > v High voltage high speed switching transisitors V it e Voits tc Cent. Amps. Pc : fere (Mié.) Watts to Amps. VCE

LT049

Abstract: LT042 LT041 SDT13305 sgsf465 BUT56A BUT56 ET403 NPN sdt13304 ks03
Contextual Info: POWER SILICON TRANSISTORS Item Number •c Part Number Manufacturer Type Max A V (BR)CEO on PD Max hFE fT ON) Min (HZ) r ICBO Max (A) Max (s) (CE)sat Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . .10 . . .15 . .

transistor darlington package to.3

Abstract: 2SC2625 I251 2SC2246 fl251 2sd920 2SC2243 sewing motor 2sd930 2SC2542
Contextual Info: “C D L L M E R S E M I C 0 N í üC T 0 R INC 74 DfT|223fl7T2 D 0 D G h 3 7 S Katings and Specifications 2238792 C O L L M E R S E M IC O N D U C T O R 74C 00637 IN C V ~ CÛiüMR SEMICOMOUCTÜ 14368 PROTON ROAD DALLAS, TEXAS 7S244 USMUWl 214-233-1589 High speed switching transistors