ET206 50 Search Results

Et206

Contextual Info: ET206 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-3P Features High voltage,High speed switching High reliability Applications Switching regulators Ultrasonic generators High frequency invertors General purpose power amplifiers

ET206

Contextual Info: ET206 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-3P Features High voltage,High speed switching High reliability Applications Switching regulators Ultrasonic generators High frequency invertors General purpose power amplifiers

et189

Abstract: ET-191 ET-190 ET-382 DTD114E ET227 ET 191 ET-127 ET-378 sw 80 24 v
Contextual Info: - 304 - Ta=25eC, *Ep[ÎTc-25tï gg DTD113E* DTDU3Z* DTD114E* DTD114T* DTD123E* DTD123T* DTD123Y* DTD133H* DTD143E* DTDÎ43T* DTD163T* ET189 ET206 ET383 tiaa4 ET400 ET401 ET403 ET405 ET-102 ET—125 ET—127 ET—188 ET—190 ET—191 ET-212 ET-215 ET-227

ET206

Abstract: ET206 50 A-128 SC-65 T151 T760 T930
Contextual Info: ET206 •&±'<TJ -Y ? > ì> x 9 tM f t t t S TRIPLE DIFFUSED PLANER TYPE . i U HI GH VOLTAGE. HIGH SPEED SWITCHING : O utline D ra w ing s • 4t A : Features • f t f f l j t J E t , H i g h voltage, high speed switching • E jf lf S if High reliability

Contextual Info: ET206 tM TRIPLE DIFFUSED PLANER TYPE « M S. HIGH v o l t a g e , h ig h s p e e d s w it c h in g '• O utline D ra w in g s 2.0 ■ 4 tA : Features • High vo ltage, high speed sw itching • S if t iS 't i High reliability ^Applications 35 Sw itching regulators

2SD921

Abstract: 2SC2625 2sc2625 equivalent et190 transistor ET401 2sc3030 2SC2625 transistor 2sc3318 ET206 2sc4242
Contextual Info: BIPOLAR TRANSISTORS Nov-01 Quick Selection Guide Comprehensive chart -40 to 400 voltage Collector current Ic cont. * PNP transistor VCEO sus Voltage min. Collector-to-emitter voltage -80 40 (A) -5 3 4 50 60 80 100 180 200 250 300 2SD834 2SD1128 2SD921 2SC2767

2SD1071

Abstract: 2SD923 ET-391 2sc2625 2SC2929 ET401 2sc4786 transistor 2sc2625 ET367 ET391
Contextual Info: TRANSISTORS 1 te 1&4I 1 IC AMPS V ceo V sus Max. Device Type VCEO V Pc Device Type Max. (sus) W NPN 180 80 2SD921 5 500 40 2SC4786 800 80 2SC3551 10 400 80 ET400 1000* 80 ET383 400 80 ET401 80 2SC4510 5 6 7 10 700 80 2SC3505 800 100 2SC4419 400 80 2SC2656

ET-191

Contextual Info: TRANSISTORS IC AM PS Max. 3 5 IC AM PS Max. VceoV Pc su s W 800 Pc W 80 Device Type NPN 2SC3550 400 60 180 80 2SD921 800 40 Device Type NPN 2SC2929 2SC3549 800 80 2SC3551 50 25 2SD1157 1000* 80 ET383 200 25 2SD834 250 60 2SD1073 100 80 ET393 -80 30 2SB862*

2SC4977

Abstract: "Bipolar Transistors" 2sc4977
Contextual Info: MOLD TYPE BIPOLAR TRANSISTORS Ratings and Specifications Q High speed switching transistors • S u ita b le f o r 50kHz class s w i t c h in g re g u la t o r s • A l l o w s t r a n s f o r m e r s t o be re d u c e d in size Device type VcB O V o lts

Contextual Info: P ow er d arlington transistors • T h e DC c u r r e n t g a i n is h i g h . • H ig h ly v e rs a tile Device type VCBO V o lts Vcí o V o lts Veto sus V o lts Ic Pc c o n t. A m p s . W a tts h tt m in . le A m ps. Vo V o lts 2SD1797 60 60 50 7 30

ET-191

Contextual Info: K l Power darlington transistors • The DC c u rre n t gain is high, • H ig h ly ve rsatile Dc'vii;« typo Volts Volts V geo sus Volts 60 60 50 7 30 800 3 1.5 — 80 80 80 7 60 2000 3 3 1.0 80 80 80 7 40 1000 3 1.5 1.0 150 100 80 7 25 400 5 2 2.0 VcESO

2SC4977

Abstract: 2SC4795 "Bipolar Transistors" 2sc4977 2SC2929 TO220F15 2SC2438 2SC2440 2SC2626 2SC2767 2SC2768
Contextual Info: g H i^ R MOLD TYPE BIPOLAR TRANSISTORS Ratings and Specifications n High speed switching transistors • S u ita b le fo r 50kH z c la s s sw itch in g regulators • A llo w s tra n sfo rm e rs to be reduced in size Device type V cbo Volts Volts V ceo sus

25c2625

Abstract: 2SC2625 2SC2930 2SC3725 ETG36-040D 1000 volt npn 2sd922 2SC3866 Fuji 2SC2930 npn transistor 2sc2625
Contextual Info: COLLHER S E M I C O N D U C T O R INC MAE D • 22 36 7 1 2 OGDlSflO flOl « C O L Switching fransistors/MOV's ^ ^ SWITCHING TRANSISTORS TQ-220AB kcont. Amps. Max. V ceo sus 3 400 800 250 -8 0 100 200 200 200 200 350 400 400 400 400 300 350 500 80 80 400

Contextual Info: « /\°7 — T / W ^ / Power Devices B /\7 — î -i i ' K' H? iS à ìÌ^ - f High speed switching transistors m * Vceo Volts 80 Ic Com. Aflips. 7 200 200 200 200 300 400 5 6 10 15 15 3 400 400 400 400 400 400 400 400 400 400 400 500 5 5 5 7 7 10 V ceo

2sc2930

Abstract: 2SD930 ET-191 2sc2623 etg36-04 2SC2542 2SC2929 2SC3549 2SD1072 2SD1073
Contextual Info: COLLHER S E M I C O N D U C T O R INC MAE D • 22 36 7 1 2 OGDlSflO flOl « C O L Switching fransistors/MOV's ^ ^ SWITCHING TRANSISTORS TQ-220AB kcont. Amps. Max. V ceo sus 3 400 800 250 -8 0 100 200 200 200 200 350 400 400 400 400 300 350 500 80 80 400

2sc4977

Abstract: transistor 2SC4977 ET-190 2sc3320 transistor 2sC2625 transistor ET391 ET-391 2SC4786 2sc4831 2SC4977 transistor
Contextual Info: FUJI STLSÊirtEDÊ SWITCHING TRANSISTORS Ée "j . '• ï>> I TÉjJii * N fq & zo \ _ < § P". m \k ‘ W » M î» T Is V l IC AMPS Max. 3 5 6 8 VcEoV J sus 800 80 Device Type NPN 2SC3550 180 80 2SD921 800 80 2SC3551 1000* 80 ET383 700 80 2SC3505 Ppc IC AMPS

ET1275

Abstract: 1si50a-050 1SI50A-100 ET191 ET206 et191 to-3p M101 et391 2SC3551 equivalent 1SI10A-100
Contextual Info: BIPOLAR TRANSISTORS Ratings and Specifications COLL HER SEMICONDUCTOR INC [Q MÔE D • 25307^2 0DGlb03 131 * C 0 L Buffer drive transistors • Best su ited fo r d riv in g tra n s is to r m o d u le s. • A ll te rm in a ls are in su la te d fro m m o u n tin g plate.

450 B1

Abstract: 2SD1072 2SD1073 2SD83 2SD916 2SD831 Sc3549 et38s
Contextual Info: §m I Power darlington transistors • T h e DC c u rre n t g a in is h ig h . • H ig h ly v e rs a tile D o v ic i VcBO V cE O V s u s V o lts geo Pc • - r c o n t. A m p s : W a tts hFF m in . ; P ackag e ► le \ .: •■A m ps. VcE ton |j.sec.

transistor m6e

Abstract: ET391 ET1275 2SC3551 equivalent 1SI50A-100 2SB757 ET191 ET367 M101 1S150A-050
Contextual Info: BIPOLAR TRANSISTORS Ratings and Specifications CO LL ME R S E M I C O N D U C T O R INC MAE D Bi 2 2 3 Ö 7 S 2 D 0 0 1 b 0 3 13T H C O L "•pV3>-t3 m Buffer drive tra n sisto rs • Best suited for driving transistor m od ules. • A ll term in a ls are insulated from m ou n tin g plate.

et1275

Abstract: M101 2SC3551 equivalent
Contextual Info: B IP O LA R T R A N S IS T O R S R atings and Specifications COLLMER Q3 SEMICONDUCTOR INC M6E D • 22307^2 0D01b03 13 1 « C O L Buffer drive tra n sisto rs • B e st su ite d fo r d riv in g t r a n sis to r m o d u le s. • A ll t e r m in a ls are in su la te d fro m m o u n t in g plate.

2SC3033

Abstract: Transistor 2sc2246 ETG36-040D 2sd920 2SC2437 2SC2930 ET403 NPN 2SC382 2SC303 transistor ET191
Contextual Info: COLL MER SEMICONDUCTOR INC MAE D • 22367=12 OüDlSflQ SOI « C O L Switching Iftmsistors/MQV's ^ g SWITCHING TRANSISTORS TO-220AB TO-220F kcont. V c e o s u s Volts Pc Device type Amps. Max. Min. Watts NPN 3 400 600 60 40 2SC2929 2SC3549 4 250 60 2SD1073

2sc4977

Abstract: transistor 2SC4977 25c2625 2SC2625 2SC2047 2SC4977 transistor ET-191 2SC4795 2SC3320 ET391
Contextual Info: FUJI <S SWITCHING TRANSISTORS B| TO-220AB T O -3 P • t ' 5 /% ■m * 1 * 1 T O -3 P F BBS 1C AMPS Max. 3 80 Device Type NPN 2SC3550 180 80 2SD921 800 80 2SC3551 1000* 80 ET383 V ceoV sus 800 5 Pc W IC AMPS Max. 400 60 Device Type NPN 2SC2929 800 40 2SC3549

2sb757

Abstract: 2SC3551
Contextual Info: « /\°7 —x / W X / Power Devices • / S '7 -h 7 i- iS / K f l'7 Power Transistor (Molded types) r a iÎŒ i li M T .'f y 3 - > ? b ~ 7 > v High voltage high speed switching transisitors V it e Voits tc Cent. Amps. Pc : fere (Mié.) Watts to Amps. VCE

2SC3551

Abstract: et365
Contextual Info: §m I Power darlington transistors • T h e DC c u rre n t g a in is h ig h . • H ig h ly v e rs a tile D o v ic i V cB O V cE O V Pc • - r cont. A m p s: W a tts geo hFÈ Package ► le \ .: •■- V c E A m p s. V o lts Net m ass G ram s E q u iv a le n t