ESM 30 450 V Search Results

ESM 310

Abstract: ESM 2200 ESM3004 ESM 3004 ESM 738 asi 4014 esm 850 IC 4011 esm3001 esm4016
Contextual Info: SCS-THOMSON GENERAL PURPOSE & INDUSTRIAL KfflDÊ @i[L[iÊra RÔDÊi POWER BIPOLAR MU 86 CB-478 CB-480 METAL SUPERSWITCH HIGH POWER TRANSISTORS Type NPN v CEO VcEV 'c m ptot v CE sat @ >c •b ‘d + ‘r ‘ r* •si* max max (m s ) (ms) (V) (V) (A) (W)

esm diodes

Abstract: ESM 470 esm 30 450 v ESM 650 esm 112-39 esm 200 cb33 p 112220 112180 esm 112 390
Contextual Info: clamping zener diodes diodes zener ecreteuses THOMSON-CSF V BR * 'RM @ V rivi Unidirectional types 1mA) 4 KW ESM ESM ESM ESM ESM ESM ESM ESM ESM ESM ESM ESM ESM ESM ESM ESM ESM ESM ESM 111-15 111-18 111-22 111-27 111-33 111-39 111-47 111-56 111-68 111-82

BUF 460 AV

Abstract: IC 2030 schematic diagram 3030DV BUV 460 C esm 200 buf 450 diode diode ESM 15 diagram DARLINGTON buv 40 a 6045AV
Contextual Info: SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ra0 S ®(IlLll(E?(si®R!IOlgg POWER MODULES BIPOLAR IN ISOTOP ISOTOP; Standard version ISOTOP : Faston version Darlingtons Bipolar transistors Bipolar transistors Darlingtons Internal schematic diagrams J J BO- O C

transistor ESM 16

Abstract: transistor ESM 30 transistor ESM 20N25 aesm16 esm 855 ESM16 16B0
Contextual Info: ESM 16 ESM 16 A ESM 16 B NPN SILICON TRANSISTORS, TRIPLE DIFFUSED TR AN S IS TO R S S IL IC IU M N P N , T R IP L E D IF F U S E S - High speed, high voltage, high power transistor Switching applications 10 A •c A p p lic a tio n s en co m m u ta tio n ^ to t

esm diodes

Abstract: esm 200 esm 30 450 v esm 112 390 ESM 650 impulsion P005 esm 112-270 SUPPRESSOR cb T0126
Contextual Info: Type V B R T (V) VRm ax (V) / IR T (m A) min V (BR)SM (V) / x D R T 76 'rsm1 (A) Page 369 T (v j | 2 5 ° C T(vj) 25 OC ESM 112-100 80 90 100 165 23 * £ S M 112-120 95 105 100 200 19 369 ESM 112-150 115 130 100 250 15 369 ESM 112-180 145 160 60 300 13 369

transistor BC 310

Abstract: transistor bc 487 transistor BC 321 TRANSISTOR BC 416 b pnp bc 337-25 transistor TRANSISTOR BC 415 transistor bc 318 transistor BC 337-25 TRANSISTOR BC 413 bc 337-40 transistor
Contextual Info: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m s o n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .

esm diodes

Abstract: esm 30 450 v ESM 200 ESM 650 diode ESM 15 esm 112 390 ESM111-150 S-005 SUPPRESSOR cb esm 112 33
Contextual Info: Silicon transient voltage suppressor diodes Diodes de p ro te c tio n au s ilic iu m DO 4 Type ^R m ax V DO ^ V (B R ÎT (V) p 2 4 kW / |rt (mA) min Rectangular puise, t p 10 /¿s, T (vj) 2 5 °C Impulsion rectangulaire, tp 10 ys. T(vp 25 °C V (B R )S M

TRANSISTOR BC 213

Abstract: TRANSISTOR BC 181 bf 239 BF 212 transistor transistor bf 184 BF 184 NPN transistor TRANSISTOR BC 212 TRANSISTOR BC 174 transistor BC 338 BF 184 transistor
Contextual Info: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique tho m so n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .

bfr 91

Abstract: THOMSON-CSF CANAL
Contextual Info: 4 0. 900 MHz class A linear for CATV/MATV applications f\ TYPE POLARITY classe A linéaire pour amplificateurs d'antenne PACKAGE @ V BR CEO min. (V) (MHz) le l\IF Cl2e @ C22b* ImA) (pF) (dB) BFX 89 BFY90 BFR 99 BFR 38 N N P P TO-72 TO-72 TO-72 TO-72 15

BF272

Abstract: ampli lineaire AMPLI LINEAIRE FM Transistor BFR 96 if amplifier BF167 cb amplifier BF509 L 146 CB BF199
Contextual Info: 4 0. 900 MHz class A linear for CATV/MATV applications f\ TYPE POLARITY classe A linéaire pour amplificateurs d'antenne PACKAGE @ V BR CEO min. (V) (M Hz) le Im A) C l2e C22b* (pF) l\IF @ (dB) BFX 89 BFY90 BFR 99 BFR 38 N N P P TO-72 TO-72 TO-72 TO-72

Axialventilatoren

Contextual Info: Energiesparende Ventilatoren mit ESM, ACi und iQ/iQ2-Motor Die Wahl der Ingenieure Ausgabe 2012-10 Die neue Generation energiesparender Ventilatoren In nahezu allen Lebensbereichen sind heute Energieeinsparungen zu einem wichtigen Thema geworden. Unsere nun erweiterte energiesparende Ventilatorenreihe, basierend auf dem Energiesparmotor

bfr 91

Abstract: BFW92 CANAL
Contextual Info: 4 0 . 900 MHz class A linear for CATV/MATV applications ^> TYPE POLARITY classe A linéaire pour amplificateurs d'antenne PACKAGE @ V BR CEO fj min. (V) (MHz) le (mA) Cl2e C22b* (pF) NF @ (dB) N N P P TO-72 TO-72 TO-72 TO-72 15 15 25 35 > 1300 >1400 800

Contextual Info: ESM T M14D2561616A Operation Temperature Condition TC -40 C~95 C DDR II SDRAM 4M x 16 Bit x 4 Banks DDR II SDRAM Features JEDEC Standard VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V Internal pipelined double-data-rate architecture; two data access per clock cycle

BU 450 bdx

Abstract: bdx 330 BUX 837 BUX37 BDV65 ESM855 BUV74 bdx 66 bdx 67 BDX65 BUV54
Contextual Info: general purpose darlington selector guide Pp60 — 150 W q guide de sélection darlingtons usage général ^ \ v • CEO 45V 60V ihomsoncsf 80V 100V 120V BDX67 BOX 66 BDX 67 A BDX 66 A BDX 67 B BDX 66 B BDX 67 C BDX 66 C TO-3 BDV67 BDV66 BDV 67 A BDV 66 A

Contextual Info: ESM T M14D5121632A 2H Automotive Grade DDR II SDRAM 8M x 16 Bit x 4 Banks DDR II SDRAM Features JEDEC Standard VDD = 1.8V 0.1V, VDDQ = 1.8V 0.1V Internal pipelined double-data-rate architecture; two data access per clock cycle Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.

Contextual Info: ESM T M14D5121632A 2H DDR II SDRAM 8M x 16 Bit x 4 Banks DDR II SDRAM Features JEDEC Standard VDD = 1.8V 0.1V, VDDQ = 1.8V 0.1V VDD = 1.75V ~ 1.9V, VDDQ = 1.75V ~ 1.9V (for speed grade -1.8) Internal pipelined double-data-rate architecture; two data access per clock cycle

Contextual Info: ESM T M14D5121632A 2H Operation Temperature Condition (TC) -40°C~95°C DDR II SDRAM 8M x 16 Bit x 4 Banks DDR II SDRAM Features JEDEC Standard VDD = 1.8V 0.1V, VDDQ = 1.8V 0.1V VDD = 1.75V ~ 1.9V, VDDQ = 1.75V ~ 1.9V (for speed grade -1.8) Internal pipelined double-data-rate architecture; two data access per clock cycle

M2D068-BF

Abstract: M2D074-DF M4D094-HA A4D450-AP01 A4D420-AP02 W4D350-CR06 S4D420-AP02 W4D420-CP02 M4D068-DF 068-DF
Contextual Info: AC axial fans S-Range, Ø 200 - Material: sheet steel coated in black - Direction of rotation: counter-clockwise, seen on rotor - Type of protection: IP 44 2 *4D 200(1) M4D068-BF 3 *4S 200 M4S068-BF 4 (1) subject to alterations W A 230/400 230/400 230 230

Contextual Info: N AMER PHILIPS/DISCRETE 25E D b b S B ' m 001=1045 7 I BUX46BUX46A T - 3 3 - f 3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO-3 envelope, intended for us in converters, inverters, switching regulators, motor control systems etc.

BFP91/A

Abstract: bfq 85 BFQ22 2N918 BFP10 BFQ63 BFT50 BFP91A BFP96
Contextual Info: S G . S —THOMSON 7 1 C D | 7 = 1 5 ^ 3 ? GaG4fifc,b 1 1 ;7 -33*^/ THOfyîSOrj S E R f llC O R S D U C T O R S _ 1 . 1000 MHz class A low noise for small signal applications P.ot V BR CEO Types Package fî @ ic Gp @ Iq /

Contextual Info: N AI1ER PHILIPS/DISCRETE bTE J> 1,1,53=531 DAT JJ 002fi42b U BUT12F BUT12AF L SILICON DIFFUSED POWER TRAN SISTO RS High-voltage, high-speed, glass-passivated npn power transistors in a S O T 186 envelope intended for use in converters, inverters, switching regulators, motor control systems, etc.

BUV98

Abstract: BUV98A ATT25 BUV98AV BUV98V
Contextual Info: PHI L IP S I N T E R N A T I O N A L 4SE D El 711002b 0031127 O E2PHIN BUV98 V BUV98A(V) T-33-/3 SILIC O N DIFFUSED PO W ER T R A N S IS T O R S High-voltage, high-current, high-speed transistors, assembled in the isolated ISO T O P package; intended for use in inverters, converters and motor control applications on 220 V to 380 V mains supplies.

Contextual Info: ESM T M14D2561616A 2L (Preliminary) DDR II SDRAM 4M x 16 Bit x 4 Banks DDR II SDRAM Features JEDEC Standard VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V Internal pipelined double-data-rate architecture; two data access per clock cycle Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.

ESM Panasonic

Contextual Info: Aluminum Electrolytic Capacitors Axial Lead Type ES/ESM Series ES/ESM Series Features • Low leakage current ESM Series ■ Low impedance ■ Long life 5000 hours at +85°C Specifications Item Performance Characteristics Operating Temperature Range -4 0 to +85’C