BUV98 Search Results

BUV98AV

Contextual Info: BUV98AV NPN TRANSISTOR POWER MODULE • ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS FULLY INSULATED PACKAGE U.L. COMPLIANT FOR EASY MOUNTING LOW INTERNAL PARASITIC INDUCTANCE ) s ( t c u d o

BUV98AF

Abstract: TRANSISTOR BUV98AF BUV98AV Scans-007954 SC04B
Contextual Info: 3DE ]> • TTS'ìSB? - D D 3 Q4 Q 5 S G S- TH OM SON SGS-THOMSON — „ — p [MDœmi gTrifMD § I '33-15 1 - BUV98AF BUV98AV NPN TR A N S IS TO R PO W ER MODULE . HIGH CURRENT POWER BIPOLAR MODULE

BUV98V

Contextual Info: BUV98V NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS: MOTOR CONTROL

BUV98

Abstract: 98AV BUV98AV
Contextual Info: X = 7 S G S -T H O M S O N i § * i m [ l 1i » « S BUV98AV NPN TRANSISTOR POWER MODULE • HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW Rth JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ISOLATED CASE 2500V RMS . EASY TO MOUNT . LOW INTERNAL PARASITIC INDUCTANCE

BUV98AV

Abstract: SMPS IC 2003
Contextual Info: BUV98AV NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS FULLY INSULATED PACKAGE U.L. COMPLIANT FOR EASY MOUNTING LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS

Contextual Info: N AMER PHILIPS/DISCRETE bbSB'lBl DQSflSDB MbB BUV98 V BUV98A(V) b^E » SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-current, high-speed transistors, assembled in the isolated ISOTOP package; intended for use in inverters, converters and motor control applications on 220 V to 380 V mains supplies.

BUV98V

Contextual Info: S C S - T H O M S O N Hi3 l@HLI©ìri©iO© i BUV98V NPN TRANSISTOR POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW Rth JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ISOLATED CASE 2500V RMS • EASY TO MOUNT ■ LOW INTERNAL PARASITIC INDUCTANCE

Contextual Info: BUV98V NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS FULLY INSULATED PACKAGE U.L. COMPLIANT FOR EASY MOUNTING LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS

BUV98

Abstract: BUV98A ATT25 BUV98AV BUV98V
Contextual Info: PHI L IP S I N T E R N A T I O N A L 4SE D El 711002b 0031127 O E2PHIN BUV98 V BUV98A(V) T-33-/3 SILIC O N DIFFUSED PO W ER T R A N S IS T O R S High-voltage, high-current, high-speed transistors, assembled in the isolated ISO T O P package; intended for use in inverters, converters and motor control applications on 220 V to 380 V mains supplies.

BUV98V

Contextual Info: BUV98V NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS: ■ MOTOR CONTROL

BUV98AV

Contextual Info: BUV98AV NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS:

BUV98AV

Abstract: s 0938
Contextual Info: BUV98AV NPN TRANSISTOR POWER MODULE HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS FULLY INSULATED PACKAGE U.L. COMPLIANT FOR EASY MOUNTING LOW INTERNAL PARASITIC INDUCTANCE • ■ ■ ■ ■ INDUSTRIAL APPLICATIONS

Contextual Info: r= 7 ^ 7# SGS-THOMSON R BUV98V m o ra « NPN TRANSISTOR POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW R,h JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ISOLATED CASE 2500V RMS . EASY TO MOUNT . LOW INTERNAL PARASITIC INDUCTANCE

schematic diagram UPS

Abstract: BUV98V smps schematic RC VOLTAGE CLAMP snubber circuit
Contextual Info: BUV98V NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE 4 3 1 INDUSTRIAL APPLICATIONS:

BUV98A

Abstract: BUV98 BUV98AV BUV98V
Contextual Info: II N AMER PHILIPS/DISCRETE bTE J> • bbSB'iBl DQ2flSD3 Mb3 « A P X BUV98 V BUV98A(V) A SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-current, high-speed transistors, assembled in th e isolated ISOTOP package; intended fo r use in inverters, converters and m o to r c o n tro l applications on 220 V to 38 0 V m ains supplies.

buv98a

Abstract: buv98
Contextual Info: PHILIPS INTERNATIONAL M5E » Bi 711002b 0031127 G E3PHIN BU V98 V BUV98A(V) T-33-13 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-current, high-speed transistors, assembled in the isolated ISOTOP package; intended fo r use in inverters, converters and m otor control applications on 220 V to 380 V mains supplies.

schematic diagram UPS

Abstract: BUV98AV RC VOLTAGE CLAMP snubber circuit
Contextual Info: BUV98AV NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE 4 3 1 INDUSTRIAL APPLICATIONS:

BUV98AV

Contextual Info: r= 7 ^ 7# SGS-THOMSON R m o ra « BUV98AV NPN TRANSISTOR POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW R,h JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ISOLATED CASE 2500V RMS . EASY TO MOUNT . LOW INTERNAL PARASITIC INDUCTANCE

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink