ERA81 SCHOTTKY Search Results

ERA81-004

Contextual Info: ERA81-004 SCHOTTKY-BARRIER RECTIFIER DIODES PRV : 40 Volts Io : 1.0 Ampere DO - 41 FEATURES : * * * * * * * * 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0) High current capability High surge current capability High reliability High efficiency Low power loss Low forward voltage drop

diode 0.2 V 1A

Abstract: ERa81 schottky
Contextual Info: ERA81-004 1A (40V / 1A ) Outline drawings, mm SCHOTTKY BARRIER DIODE ø3.0 ø0.6 5.0 25 MIN. 25 MIN. Marking Features Color code : Silver Low VF Super high speed switching Voltage class -004 Lot No. 02 High reliability by planer design Cathode mark •··

Contextual Info: ERA81-004 1A (40V / 1A ) Outline drawings, mm SCHOTTKY BARRIER DIODE ø3.0 ø0.6 5.0 25 MIN. 25 MIN. Marking Features Color code : Silver Low VF Super high speed switching Voltage class -004 Lot No. 02 High reliability by planer design Cathode mark •··

Contextual Info: ERA81-004 SCHOTTKY-BARRIER RECTIFIER DIODES PRV : 40 Volts Io : 1.0 Ampere DO - 41 FEATURES : * * * * * * * MECHANICAL DATA : * Case : DO-41 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed

marking B32 diode SCHOTTKY

Abstract: ERA81-004 E23371
Contextual Info: ERA81-004 1A Outline Drawing SCHOTTKY BARRIER DIODE • Marking ■ Features • Lo w V f • Super high speed switching Color code : Silver • High reliability by planer design 1 Voltage class ■ Applications o -§ o • High speed power switching Lot No.

Contextual Info: ERA81-004 Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current1.0 @Temp (øC) (Test Condition)25’ V(RRM)(V) Rep.Pk.Rev. Voltage45 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.50 V(FM) Max.(V) Forward Voltage550m @I(FM) (A) (Test Condition)1.0

aajf

Contextual Info: ERA81-004 1a * ± 'J 'W.M'W-Y : Outline Drawings -f= t— K SCHOTTKY BARRIER DIODE : Features • ffiV r • Low Vp : Marking A 7 —n — K : ffl Color code : Silver Super high speed sw itchin g. High reliability by planer design. Voltage class : Applications

Contextual Info: SCHOTTKY BARRIER DIODES 20 - 90Vo Its 20 - 30V O LT S Part Number •o A PAC KAG E SURFACE MOUNT M S flfttfe ERA82-004 *1 ERA83-004 *1 ERA81-004 *2 ERB83-004 *2 ERC81-004 *4 ERC81S-004 *4 ERC80-004 ERC62-004 ERC80M-004 ERC62M-004 AXIAL TO*220 TO-220F ,TQs22 F<5 ,

era-84

Abstract: 104C smd ERE81-004
Contextual Info: —K / Rectifier Diodes m -it i/yjil Schottky-Barrier Diodes SBD 1 in one-package 1 Ä Device type SMD i'tiSno Maximum rating Viww *1 If i a v ) ERA82-004 SC802-04 SC802-06 SC802-09 ERA83-004 ERA83-006 ERA81-004 ERA84-009 ERA85-009 ERB83-004 ERB83-006 ERB81-004

Contextual Info: ERA81-004 1A I scHOTTKY b a r r i e r dio de Outline Drawing ¡*3.0 $ 0.6 • a # 25 min 25" 5.0 DO-41 ■ Marking ■ Features • Lo w V f Color code : Silver • Super high speed switching • High reliability by planer design Voltage class ■ Applications

TL130

Abstract: tc122 25 8 4 yg802c10 SD883-04 SD833-04 LM3661TL-1.40 TC8520 tc9145 TS802C09 ERA82-004
Contextual Info: 整流ダイオード / Rectifier Diodes • ショットキーバリアダイオード Schottky-Barrier Diodes（SBD） シングル 1 in one-package 形 式 Device type ERA82-004 SC802-04 SC802-06 SC802-09 ERA83-004 ERA83-006 ERA81-004 ERA84-009 ERA85-009

ERA81-004

Abstract: a324 arej
Contextual Info: E RA81-004 1a '> a "A * r—'< l) 7 ÿ -f=t— K • O utline D raw ings SCHOTTKY BARRIER DIODE • t t f t : Features • te V F ■ S Low VF tjv • x -r : M arking Ä 7 " 3 — K ffl Color code : Silver Super high speed switching. High reliability by planer design.

RA81-004

Contextual Info: E RA81-004 1a ' > a " A * r — ' < l) 7 ÿ - f = t — K • O utline D raw ings SCHOTTKY BARRIER DIODE • t t f t : Features • te V F ■ S Low VF tjv : M arking • x -r Ä 7 " 3 —K ffl Color code : Silver Super high speed switching. High reliability by planer design.

ERA81-004

Abstract: 10SINE
Contextual Info: E RA81-004 1a '> a "A * r—'< l) 7 ÿ -f=t— K • O utline D raw ings SCHOTTKY BARRIER DIODE • t t f t : Features • te V F ■ S Low VF tjv • x -r : M arking Ä 7 " 3 — K ffl Color code : Silver Super high speed switching. High reliability by planer design.

to125

Abstract: ERA81 ERA82-004 ERA83-004 ERA83-006 ERA84-009 ERA85-009 ERB83-004 ERB83-006 SC802-04
Contextual Info: Schottky-Barrier Diodes Single package Ratings and characteristics T h e rm a l ra tin g M a x im u m ra tin g Type V rrm lo V o lts Am ps. IfSM * 2 #1 T j a n d Tstg C h a ra c te ris tic s T a = 2 5 °C (firm * 3 V fm M a ss D im e n s io n s Fig. N o.

DIODE S4 29

Contextual Info: £•< K/Diodes J [ — K i^p p + S ^p p —R i l / L i s t of Diode E quivalent Products f f ^ t t i ; o t ' T £ ± l C - S S L T i ' & ' i ' i I £ 4 ' £ U ST<T>?\ <£< <r'{iJ5CQ±, c?i'„ The characteristics of the equivalent products do not always agree with those of the diode products. Therefore, be

b2545 transistor

Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
Contextual Info: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection

MR2835S equivalent

Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Contextual Info: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

mur1650

Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
Contextual Info: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and

equivalent components of diode 1N5399

Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
Contextual Info: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

FE16B

Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
Contextual Info: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —