ELECTRICAL Search Results

Contextual Info: TMS28C64 65,536-BIT ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY • Organization 8K x 8 • Single 5-V Power Supply ± 10% N AND J PACKAGES (TOP VIEW } Q 1 U A 12C 2 A7C 3 Compatible with Existing 64K M O S EPRO M s. PRO M s. R O M s, and EEPR O M s

ISS226

Abstract: ISV99 2sk117 ISV128 2sk toshiba 302V marking A3 amplifier 2SK30ATM u marking amplifier
Contextual Info: TOSHIBA {DI SCRE TE /O PT O} Sb D E ^ T D T T E S D □□□7103 / Í 9097250 '-L ^ TOSHIBA DI S C R E T E /O P T O 5bC 0 7 T Q 3 D'^. ¿ . c; . . V FET Type Application Electrical characteristic (Ta *= 25°C) V d sx V V * * gdo grd * Ig , I d * (mA) Po(mW)

1N4447

Contextual Info: TYPES 1N4148. 1N4149, IN U M i : ^ 4 i9 SILICON SWITCHING DIODES B U L L E T IN NO. D L-S 739269, O C T O B E R 1 9 6 6 - R E V I S E D M A R C H 1973 FA ST S W IT C H IN G D IO D E S • Rugged Double-Plug Construction Electrical Equivalents: 1N4148 . . . 1N914 . .

2N3051

Abstract: 2N3050 2N2412 2n3049
Contextual Info: TYPES 2N3049, 2N3050, 2N3051 DUAL P-N-P SILICON TRANSISTORS B U L L E T I N N O . D L -S 6 7 4 2 3 0 , A U G U S T 1 9 6 3 - R E V I S E D A P H IL 1 96 7 DESIGNED FOR DIFFERENTIAL AMPLIFIERS, LOW-NOISE AMPLIFIERS, AND LOW-LEVEL SWITCHING • Each Triode Electrically Similar to 2N2411 and 2N2412 Transistors

Contextual Info: TOSHIBA TC58V64FT/DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M X 8 BITS CMOS NAND E2PROM DESCRIPTION The TC58V64FT/DC is a single 3.3-V 64-Mbit (69,206,016-bit) NAND electrically erasable and programmable read-only memory (NAND E2PROM) organized as 528 bytes X 16 pages X 1024 blocks.

Contextual Info: CONVERSION CHART I INCH MM .002 0,05 .010 0.25 .020 0.51 .030 0.76 SPECIFICATIONS: I » X t O • 1 — < •—i • => 1.09 o o .020 12X < .100 2,54 .130 3.30 .172 4,37 .187 4,75 .200 5,08 .210 5,33 .216 5,49 .340 ELECTRICAL' CONTACT RATING: 0.4 VA a 20 VDC OR PEAK AC

Contextual Info: SILICON STACKED GATE MOS INTEGRATED CIRCUIT - TC57256AD-12,-120,-150 32 , 768 W O R D x 8 B I T C M O S UV ERASABLE A N D ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY IDESCRIPTIONI The TC57256AD is a 32,768 word x 8 bit CMOS ultraviolet light erasable and electri­

TC57256AD

Contextual Info: TOSHIBA TC57256AD-12 TC57256AD-120 TC57256AD-150 SILICON STACKED GATE CMOS 32,768 WORD x 8 BIT CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY Description The TC57256AD is a 32,768 word x 8 bit CMOS ultraviolet light erasable and electrically programmable read only memory. It

2N2389

Abstract: 2N2390 2N1711 Texas Instruments TI424
Contextual Info: TYPES 2N2389, 2N2390 N-P-N SILICON TRANSISTORS B U L L E T I N N O . D L -S 6 4 6 0 2 7 , O C T O B E R 1 9 6 4 FOR GENERAL PURPOSE AMPLIFIER AND SWITCHING APPLICATIONS FROM <0.1 ma to >150 mo, dc to 30 Me Formerly TI424 and TI425 * Electrically Similar to 2N1613 and 2N1711

modular jack RJ45 8P8C

Contextual Info: 3 .2 5 + 0 .2 5 if C\l 1 6 .1 5 + 0 .2 5 LED 1 CN LED 2 i 0 .5 0 o o O O m • _l o _l o CL ro CL CN MAX. O +l lO O +l CL lO CO m D CN o ELECTRICAL CIRCUIT lO 0 3 .2 0 +l t AMP LOGO RED/GREEN COLOR LED 00 ro i Q_ >- CL o i i\ CÛ □ t i 1 o lO i ro CL o

ic 748

Abstract: 2SC4688
Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SC4688 Unit in ram Weight: ELECTRICAL CHARACTERISTICS CHARACTERISTIC Ta=25°C SYMBOL Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage

Contextual Info: TMS28F040 4 194 304-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY SMJS040-DECEMBER 1992 N PACKAGET Organization . . . 512K x 8 Separately Erasable 32K Byte Blocks Two Power Supplies 5 V and 12 V 100% TTL-Level Control Inputs Fully Automated On-Chip Erase and Byte

Contextual Info: KV 1 8 4 5 E S P E C I F I C A T I ON TABLE OF CONTENTS 1. PURPOSE 2 . TOKO PART NUMBER 3. APPLICATIONS 4 . STRUCTURE 5 . PACKAGE OUTLINE 6. PIN LAYOUT SIG N ATU RE DATE 7 . PACKAGE OUTLINE DIM ENSIONS/ Drawn By MARKING 8. ABSOLUTE MAXIMUM RATINGS 9. ELECTRICAL CHARACTERISTICS

tc58v32ft

Abstract: TC58V32
Contextual Info: IN TEG RA TED CIRCUIT TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC58V32 FT TO SHIBA TECHNICAL DATA SILICON GATE CMOS 32 MBIT 4 M X 8 BITS CMOS NAND E2PROM TENTATIVE DATA DESCRIPTION The TC58V32FT device is a single 3.3-volt 33 M (34,603,008) bit NAND Electrically Erasable and

TC5716200D-150

Abstract: 5716200D
Contextual Info: TOSHIBA TC5716200D-150, -200 SILICON STACKED GATE CMOS 1,048,576 WORD x 16 BIT/2,097,152 WORD x 8 BIT CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY D escription T heT C 5716200D is a 16,777,216 bit CMOS ultraviolet light erasable and electrically programmable read only memory. It is

Contextual Info: MCT2, MCT2E OPTOCOUPLERS D 2 7 3 1 , MARCH 1 9 8 3 COMPATIBLE W ITH STANDARD TTL INTEGRATED CIRCUITS Gallium Arsenide Diode Infrared Source Optically Coupled to a Silicon N-P-N Phototransistor High-Voltage Electrical Isolation or 3 .5 5 -k V Rating 1.5 -kV

1S1585

Abstract: 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241
Contextual Info: Super-Mini Diodes SOT-23MOD, SOT-143MOD. F6 Mark Equivalent other package Type No. A3 1S1585 Anode common Cathode comon Electrical Characteristics (Ta=25°C) Type No. Application V r(V) IO(mA) trr (ns) Connection JX. Remarks 1SS181 High-speed switching 80

Contextual Info: INTEGRATED TOSHIBA CIRCUIT TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC58A040 F SILICON GATE CMOS 4 MBIT 4 M X 1 BITS CMOS AUDIO NAND E2PROM TENTATIVE DATA DESCRIPTION The TC58A040 is a 5-volt 4 Mbit NAND Electrically Erasable and Programmable Read Only Memory

1N5614 JANTX

Contextual Info: LOW VOLTAGE RECTIFIERS Axial Leaded • Hermetic 70ns-2000ns Recovery • JANTX • JANTXV ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage Vrwm Average Rectified Current (1) (to) Reverse Current @ Vrwm Forward Voltage (lr)

Contextual Info: T O S H IB A TENTATIVE TC58V32DC TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32 M BIT 4 M x 8 BITS CMOS NAND E2PROM DESCRIPTION The TC58V32DC device is a single 3.3-volt 33 M (34,603,008) bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) organized as 528 byte X 16 pages X 512 blocks.

1N4536

Abstract: 1n4531
Contextual Info: TYPES 1N4531 THRU 1N4534, 1N4536 SILICON SWITCHING DIODES B U L L E T I N N O . D L -S 7 3 9 7 7 4 , M A R C H 1 9 6 7 - R E V I S E D M A R C H 1 9 7 3 FAST SWITCHING DIODES • Rugged Double-Plug Construction Electrical Equivalents 1N4531 . . . 1N4148 . . . 1N914

Contextual Info: TOSHIBA {DIS CR ET E/OPT O} 9097250 TOSHIBA <D I S C R E T E / O P T O Silicon Epitaxial Planar Type Variable Capacitance Diode 6 7 r. 0 3 3 0 6 n r ~ o 7-/9 1S2094 UHF, VHF AFC APPLICATIONS. Unit in mm ELECTRICAL CHARACTERISTICS Ta=25°C) CHARACTERISTIC

Contextual Info: 8 Bit Microcontroller TLCS-870/C Series TMP86FH93NG The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity

hf 224 capacitor

Contextual Info: 8 Bit Microcontroller TLCS-870/C Series TMP86C407MG TMP86C407MG The information contained herein is subject to change without notice. 021023 _ D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and