EIA1 Search Results

equivalent transistor PT 3500

Abstract: EIA1111-6
Contextual Info: EIA1111-6 11.0-11.5 GHz 6-Watt Internally Matched Power FET UPDATED 12/06/2005 .060 MIN. FEATURES • • • • • • .650±.008 .512 11.0– 11.5GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +37.5 dBm Output Power at 1dB Compression 10 dB Power Gain at 1dB Compression

EIA1415-8P

Abstract: 7371711
Contextual Info: Excelics EIA1415-8P Not recommended for new designs. Contact factory. Effective 03/2003 14.4-15.35GHz, 8W Internally Matched Power FET • • • • • 14.4-15.35GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE 20% TYPICAL +39dBm TYPICAL P1dB OUTPUT POWER

EIA1111-2

Contextual Info: EIA1111-2 11.0-11.5 GHz 2-Watt Internally Matched Power FET UPDATED 02/17/2006 .060 MIN. FEATURES • • • • • • .650±.008 .512 ∆G PAE SN .004 IDSS Saturated Drain Current VP Pinch-off Voltage RTH .070 ±.008 ALL DIMENSIONS IN INCHES Caution! ESD sensitive device.

Contextual Info: Excelics EIA1415A-4P Not recommended for new designs. Contact factory. Effective 03/2003 14.0-15.35GHz, 4W Internally Matched Power FET • • • • • 14.0-15.35GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE 25% TYPICAL +36.0dBm TYPICAL P1dB OUTPUT POWER

EIA1616-8P-2

Contextual Info: EIA1616-8P-2 16.2-16.4GHz 8-Watt Internally Matched Power FET UPDATED 11/09/06 FEATURES • • • • • • • 16.2– 16.4GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.0 dBm Output Power at 1dB Compression 6.0 dB Min. Power Gain at 1dB Compression

Contextual Info: EIA1415-5 14.40-15.35GHz 5-Watt Internally Matched Power FET UPDATED 11/17/2006 FEATURES • • • • • • • 14.40– 15.35GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.5 dBm Output Power at 1dB Compression 7.0 dB Power Gain at 1dB Compression

EIA1415-2P

Abstract: EIA1415A-2P
Contextual Info: Excelics EIA1415A-2P 14.0-15.35 GHz: 2Watt PRELIMINARY DATA SHEET Internally Matched Power FET • • • • • 14.0-15.35GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE 25% TYPICAL +33.0 TYPICAL P1dB OUTPUT POWER 7.5dB TYPICAL G1dB POWER GAIN

EIA1314A-4P

Contextual Info: Excelics EIA1314A-4P 13.0-14.5 GHz: 4Watt PRELIMINARY DATA SHEET Internally Matched Power FET • • • • • 13.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM FEATURES HIGH PAE 27% TYPICAL +36.0dBm TYPICAL P1dB OUTPUT POWER 8.5dB TYPICAL G1dB POWER GAIN

EIA1616-4P

Contextual Info: Excelics EIA1616-4P PRELIMINARY DATA SHEET 16.2-16.4GHz, 4W Internally Matched Power FET • • • • • 16.2-16.4GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE 25% TYPICAL +36dBm TYPICAL P1dB OUTPUT POWER 7dB TYPICAL G1dB POWER GAIN

EIA1114-2

Contextual Info: EIA1114-2 11.0-14.0GHz 2-Watt Internally Matched Power FET UPDATED 07/25/2006 FEATURES • • • • • • • • 11.0– 14.0GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +33.5 dBm Output Power at 1dB Compression 7.0 dB Power Gain at 1dB Compression

EIA1414-6

Abstract: 28MA3
Contextual Info: EIA1414-6 14.00-14.50 GHz 6-Watt Internally Matched Power FET UPDATED 12/5/2005 FEATURES • • • • • • .060 MIN. 14.00– 14.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +37.5 dBm Output Power at 1dB Compression 8.0 dB Power Gain at 1dB Compression

EIA1314A-8P

Contextual Info: Excelics EIA1314A-8P Not recommended for new designs. Contact factory. Effective 03/2003 13.0-14.5GHz, 8W Internally Matched Power FET • • • • • 13.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE 25% TYPICAL +39dBm TYPICAL P1dB OUTPUT POWER

EIA1210

Abstract: EIA1206 AMK212BJ476MG AMK316BJ107ML EIA0402 EIA0805 EIA-0805
Contextual Info: June 30, 2005 Taiyo Yuden: Mass Production of World's First 100µF Multilayer Ceramic Capacitor in EIA1206 Size Fusion of Sub-Micrometer Thin-Layer Technology with 600-Plus Multilayer Technology Taiyo Yuden will commence mass production in July 2005 of a 100µF compact, high-capacitance

Au Sn eutectic

Abstract: EIA1415-4P EIA1415A-4P 3120MA
Contextual Info: Excelics EIA1415A-4P 14.0-15.35 GHz: 4Watt PRELIMINARY DATA SHEET Internally Matched Power FET • • • • • 14.0-15.35GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE 25% TYPICAL +36.0dBm TYPICAL P1dB OUTPUT POWER 7/6dB TYPICAL G1dB POWER GAIN

EIA1314A-2P

Contextual Info: Excelics EIA1314A-2P 13.0-14.5 GHz: 2Watt PRELIMINARY DATA SHEET Internally Matched Power FET • • • • • 13.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM FEATURES HIGH PAE 30% TYPICAL 33.0dBm TYPICAL P1dB OUTPUT POWER 9dB TYPICAL G1dB POWER GAIN

BS9075

Abstract: BS9075 F002 CECC 30-701
Contextual Info: Cased Radial Capacitors Approved to CECC 30601 - 009 and BS9075 N0023 & F0002 ORDERING CODE VK20 B A 101 J B CECC R TR Style Temperature range -55ºC + 125ºC Dielectric (A=NPO) Capacitance according to EIA1 Tolerance according to EIA Rated Voltage A=50/63V B=100V C=200V

EIA1111-6

Contextual Info: EIA1111-6 11.0-11.5 GHz 6-Watt Internally Matched Power FET UPDATED 11/15/2005 Excelics FEATURES • • • • • • .024 EIA1111-6 11.0– 11.5GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +37.5 dBm Output Power at 1dB Compression 10 dB Power Gain at 1dB Compression

EIA1616-8P-2

Contextual Info: EIA1616-8P-2 16.20-16.40 GHz, 8-Watt Internally-Matched Power FET ISSUED DATE: 03-22-2004 FEATURES • • • • • • EIA1616-8P-2 16.20-16.40 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.0 dBm Output Power at 1dB Compression 6.0 dB Power Gain at 1dB Compression

Contextual Info: Excelics EIA1616-8P Not recommended for new designs. Contact factory. Effective 03/2003 16.2-16.4GHz, 8W Internally Matched Power FET • • • • • 16.2-16.4GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE 20% TYPICAL +39dBm TYPICAL P1dB OUTPUT POWER

Contextual Info: Excelics EIA1314A-4P Not recommended for new designs. Contact factory. Effective 03/2003 13.0-14.5GHz, 4W Internally Matched Power FET • • • • • 13.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM FEATURES HIGH PAE 27% TYPICAL +36.0dBm TYPICAL P1dB OUTPUT POWER

EIA1414-8P

Contextual Info: Excelics EIA1414-8P Not recommended for new designs. Contact factory. Effective 03/2003 14.0-14.5GHz, 8W Internally Matched Power FET • • • • • 14.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE 25% TYPICAL +39dBm TYPICAL P1dB OUTPUT POWER

EIA1616-8P

Contextual Info: Excelics EIA1616-8P PRELIMINARY DATA SHEET 16.2-16.4GHz, 8W Internally Matched Power FET • • • • • 16.2-16.4GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE 20% TYPICAL +39dBm TYPICAL P1dB OUTPUT POWER 6dB TYPICAL G1dB POWER GAIN

EIA1415B-8P

Abstract: IDSS
Contextual Info: Excelics EIA1415B-8P 14.9-15.1 GHz: 8Watt PRELIMINARY DATA SHEET Internally Matched Power FET • • • • • 14.9-15.1GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE 20% TYPICAL +39dBm TYPICAL P1dB OUTPUT POWER 6dB TYPICAL G1dB POWER GAIN

Contextual Info: Excelics EIA1415B-8P Not recommended for new designs. Contact factory. Effective 03/2003 14.9-15.1GHz, 8W Internally Matched Power FET • • • • • 14.9-15.1GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE 20% TYPICAL +39dBm TYPICAL P1dB OUTPUT POWER