F0002 Search Results

BS9075

Abstract: BS9075 F002 CECC 30-701
Contextual Info: Cased Radial Capacitors Approved to CECC 30601 - 009 and BS9075 N0023 & F0002 ORDERING CODE VK20 B A 101 J B CECC R TR Style Temperature range -55ºC + 125ºC Dielectric (A=NPO) Capacitance according to EIA1 Tolerance according to EIA Rated Voltage A=50/63V B=100V C=200V

NMTB-F000230FWHSGW-11A

Abstract: C326 CY80 DS68 PW80 S6B1713
Contextual Info: Messrs. Product Specification Model: NMTB-F000230FWHSGW-11A Rev. No. Issued Date. Page. B Nove. 29, 06 1 / 21 LIQUID CRYSTAL DISPLAY MODULE MODEL: NMTB-F000230FWHSGW-11A Customer’s No.: N/A Acceptance Microtips Technology Inc. 12F. No.31 Lane 169, Kang Ning St.,

NMTB-F000261FWHSGW

Abstract: Microtips ST7565V 25 pin parallel connector 90
Contextual Info: Messrs. Product Specification Model: NMTB-F000261FWHSGW Rev. No. A Issued Date. Apr. 16. 07 LIQUID CRYSTAL DISPLAY MODULE MODEL: NMTB-F000261FWHSGW Customer’s No.: N/A Acceptance Microtips Technology Inc. 12F. No.31 Lane 169, Kang Ning St., His-Chih, Taipei Hsien, Taiwan, R.O.C.

set top box video recorder

Contextual Info: TSB42AA4/42AA4I TSB42AB4/42AB4I ceLynx IEEE 1394.a Consumer Electronics Link Layer Controller Data Manual April 2003 Mixed Signal Products SLLS341E IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications,

27s21

Abstract: AMD 27S21 AM27S21 21A1
Contextual Info: Am27S21 /27S21A AdvaMcro 1,024-Bit 256x4 Bipolar PROM Devices DISTIN CTIVE CH ARA CTERISTICS • • • • • • High speed Highly reliable, ultra-fast programming Platinum-Silicide fuses High programming yield Low-current PNP inputs High-current open-collector and three-state outputs

Contextual Info: in te i ADVANCE INFORMATION 28F016XS 16-MBIT 1 MBIT x 16, 2 MBIT x 8 SYNCHRONOUS FLASH MEMORY • Effective Zero Wait-State Performance up to 33 MHz — Synchronous Pipelined Reads ■ SmartVoltage Technology — User-Selectable 3.3V or 5V V cc — User-Selectable 5V or 12V Vpp

Contextual Info: PRODUCT PREVIEW int ! VALUE SERIES 200 FLASH MEMORY CARD 8 - 6 4 MEGABYTES ¡MC008FLSG, ¡MC016FLSG, ¡MC024FLSG ¡MC032FLSG, ¡MC048FLSG, ¡MC064FLSG Low-Cost Linear Flash Card — Intel StrataFlash Memory Technology Automated Write and Erase Algorithms

gear 49t

Abstract: D020 DD20 ID340D01 LH28F008SC
Contextual Info: SHARP I D 3 4 ODO 1 1 Contents 1. G eneral D e sc rip tio n . 3 2. F eatu re s. .„p.

LH28F008BJT-BTLZC

Abstract: LHF08JZC
Contextual Info: PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LH28F008BJT-BTLZC Flash Memory 8M 1Mb x 8 (Model Number: LHF08JZC) Lead-free (Pb-free) Spec. Issue Date: October 5, 2004 Spec No: EL16X020 LHF08JZC ●Handle this document carefully for it contains material protected by international copyright law.

Contextual Info: LH28F008SC-T/SCH-T, LH28F008SC-TL/SCH-TL LH28F008SC-T/SCH-T LH28F008SC-TL/SCH-TL 8 M-bit 1 MB x 8 Smart 3 Flash Memories DESCRIPTION The LH28F008SC-T/SCH-T/SC-TL/SCH-TL flash memories with Smart 3 technology are high-density, low-cost, nonvolatile, read/write storage solution for a

28F008SA

Abstract: E0000 LH28F008SCR-L85 LHF08CH2
Contextual Info: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F008SCR-L85 Flash Memory 8M 1MB x 8 (Model No.: LHF08CH2) Spec No.: EL104029B Issue Date: February 1, 1999 sharp LHF08CH2 ●Handle this document carefully for it contains material protected by international

LHF00L05

Contextual Info: PRODUCT SPECIFICATIONS Integrated Circuits Group LHF00L05 Flash Memory 8M 1MB x 8 (Model No.: LHF00L05) Spec No.: FM037007 Issue Date: July 22, 2003 LHF00L05 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,

29058

Contextual Info: 3/5 VOLT SERIES 100 FLASH MEMORY MINIATURE CARD ÌFM002A, ÌFM004A, ÌFM008A • Low-Cost Linear Flash Card ■ Miniature Card Specification Compliant ■ Single Supply SmartVoltage Operation — 5 V or 3.3 V Read/Write ■ Fast Read Performance — 100 ns Max Access Time at 5 V

"NOR Flash" intel 28f

Abstract: 29060
Contextual Info: PRELIMINARY intei 5 VOLT INTEL StrataFlash MEMORY 28F320J5 and 28F640J5 x8/x16 High-Density Symmetrically-Blocked Architecture — 64 128-Kbyte Erase Blocks (64 M) — 32 128-Kbyte Erase Blocks (32 M) Cross-Compatible Command Support — Intel Basic Command Set

5 PEN PC TECHNOLOGY free

Contextual Info: ADVANCE INFORMATION INTEL StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT 28F320J5 a n d 28F640J5 High-Density Sym m etrically-Blocked A rchitecture — 64 128-Kbyte Erase Blocks 64 M — 32 128-Kbyte Erase Blocks (32 M) Cross-Com patible Command Support

INTEL ES

Abstract: XX96H 297372
Contextual Info: int ! ADVANCE INFORMATION 28F016XS 16-MBIT 1 MBIT x 16, 2 MBIT x 8 SYNCHRONOUS FLASH MEMORY Effective Zero Wait-State Performance up to 33 MHz - Synchronous Pipelined Reads • Backwards-Compatible with 28F008SA Command-Set . 2 pA Typica| Deep Power.Down

AM2167

Abstract: Am2187-70 AM2167-45 AM2167-55 AM2167-70 cgom AM27C010
Contextual Info: A m 2167 AdVMk;ro 16,384x1 Static R AM Devices D IST IN C T IV E C H A R A C T E R IS T IC S • • • High speed — a c c e ss times a s fast a s 35 n s maximum Automatic power down when deselected Low power dissipation - Am2167: 660 m W active, 110 m W power down

FFBC0100H

Abstract: LHF00L02
Contextual Info: PRODUCT SPECIFICATIONS Integrated Circuits Group LHF00L02 Flash Memory 8M 1MB x 8 (Model No.: LHF00L02) Spec No.: FM037004 Issue Date: June 18, 2003 LHF00L02 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,

28F008SA

Abstract: E0000 LH28F008SCN-L85
Contextual Info: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F008SCN-L85 Flash Memory 8M 1MB x 8 (Model No.: LHF08CH9) Spec No.: EL10Z17 Issue Date: December 2, 1998 sharp LHF08CH9 ●Handle this document carefully for it contains material protected by international

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-21216-4E ASSP IF Band PLL Frequency Synthesizer MB15C103 • DESCRIPTION The Fujitsu MB15C103 is an exclusive Intermediate Frequency IF band Phase Locked Loop (PLL) frequency synthesizer with pulse swallow operation. The reference divider and comparison divider have fixed divide ratios, so

74F07A

Contextual Info: INTEGRATED CIRCUITS 74F06, 74F06A, 74F07, 74F07A Inverter/buffer drivers Product specification 1992 Jul24 IC15 Data Handbook Philips Semiconductors PHILIPS Philips Sem iconductors Product specification Hex inverter/buffer drivers open-collector K FEATURES OF 74F06, 74F07

TSB42AA4

Abstract: TSB42AA4IPDT TSB42AA4PDT TSB42AA4PGE TSB42AB4IPDT TSB42AB4PDT TSB42AB4PGE
Contextual Info: TSB42AA4/42AA4I TSB42AB4/42AB4I ceLynx IEEE 1394.a Consumer Electronics Link Layer Controller Data Manual April 2003 Mixed Signal Products SLLS341E IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications,

ABB T7 BREAKER MANUAL

Abstract: S802S-UCB20 ABB DC Main Circuit breaker 2POLE ABB MCB s260 ABB TMAX T7 S800N mcb ABB S802N-C20 ABB MCCB 160 S200M
Contextual Info: Technical catalogue S800 The High Performance MCB ABB ABB Table of Contents A question of power. Definitively more power. The extensive S800 range offers the right High gured and operated safely in an uncomplica- Performance MCB with high-rated breaking ted manner. Convincing selectivity ratings to

CONTROL10

Abstract: 28F008SC 28F016SC F0003 F0004 100 Flash Memory Miniature Card 29058
Contextual Info: E PRELIMINARY SERIES 100 FLASH MEMORY MINIATURE CARD 2, 4, 8 MBYTE iFM002A, iFM004A, iFM008A n n n n n n n Low-Cost Linear Flash Card Miniature Card Specification Compliant Single Supply SmartVoltage Operation  5 V or 3.3 V Read/Write Fast Read Performance