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    EHP00764 Search Results

    EHP00764 Datasheets Context Search

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    sot23 s1a marking

    Abstract: marking code S1A sot23
    Contextual Info: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906


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    smbt3904mmbt3904smbt3904ssmbt3906+5mmbt3906smbt3904/mmbt3904ot363sot23 s1a markingmarking code s1a sot23 PDF

    ic power 22E

    Abstract: 3904U power 22E IC 1N916
    Contextual Info: SMBT 3904U NPN Silicon Switching Transistor Array • High DC current gain: 0.1mA to 100mA 5 4 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package 3 2 • Complementary type: SMBT 3906U (PNP)


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    3904u100ma3906uvpw09197+8eha07178sc-74ehp00763ehp00764oct-14-1999ic power 22epower 22e ic1n916 PDF

    VPS05604

    Abstract: H21E
    Contextual Info: SMBT 3904PN NPN/PNP Silicon Switching Transistor Array Preliminary data 4  High current gain 5 6  Low collector-emitter saturation voltage  Two galvanic internal isolated NPN/PNP Transistors in one package 2 3 1 VPS05604 C1 B2 E2 6 5 4 TR2 TR1 1 2 3 E1


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    3904pnvps05604eha07177ot-363+5ehp00763ehp00764aug-04-1999ehp00757h21e PDF

    smbt3904upn

    Contextual Info: SMBT3904UPN NPN/PNP Silicon Switching Transistor Array  High current gain 4 5 6  Low collector-emitter saturation voltage  Two galvanic internal isolated NPN/PNP Transistors in one package 3 2 1 Tape loading orientation VPW09197 Marking on SC74 package


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    smbt3904upnvpw09197eha07177 PDF

    SMBT3906U

    Contextual Info: SMBT3906U PNP Silicon Switching Transistor Array  High DC current gain: 0.1mA to 100mA 5 4 6  Low collector-emitter saturation voltage  Two galvanic internal isolated Transistors with good matching in one package 3 2  Complementary type: SMBT3904U (NPN)


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    smbt3906u100masmbt3904uvpw09197+4eha07175ehp00773ehp00764jul-11-2001 PDF

    Contextual Info: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906


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    smbt3904mmbt3904smbt3904ssmbt3906+3mmbt3906smbt3904/mmbt3904ot363 PDF

    SMBT3906U

    Contextual Info: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:


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    smbt3906mmbt3906smbt3906ssmbt3906u+4smbt3904mmbt3904smbt3906s/smbt3906/ PDF

    Contextual Info: SMBT3904.PN NPN / PNP Silicon Switching Transistor Array • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN / PNP transistor in one package • Pb-free (RoHS compliant) package • Qualified according AEC Q101


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    smbt3904smbt3904pnsmbt3904upneha07177+1ot363 PDF

    SC74

    Abstract: SMBT3904 SMBT3904PN SMBT3904UPN 6C TRANSISTOR MARKING
    Contextual Info: SMBT3904.PN NPN / PNP Silicon Switching Transistor Array • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN / PNP transistor in one package • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101


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    smbt3904smbt3904pnsmbt3904upneha07177+3ot363sc746c transistor marking PDF

    Contextual Info: SMBT3904.PN NPN / PNP Silicon Switching Transistor Array • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN / PNP transistor in one package SMBT3904PN SMBT3904UPN C1 B2 E2 6 5 4 TR2 TR1 1 2 3 E1 B1


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    smbt3904smbt3904pnsmbt3904upneha07177+2ot36320may PDF

    h12e

    Abstract: ic power 22E SMBT3904PN VPS05604 h11e h22e
    Contextual Info: SMBT3904PN NPN/PNP Silicon Switching Transistor Array 4  High current gain 5 6  Low collector-emitter saturation voltage  Two galvanic internal isolated NPN/PNP Transistors in one package 2 3 1 Tape loading orientation VPS05604 Marking on SOT-363 package


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    smbt3904pnvps05604ot-363eha07193+9eha07177ot363ehp00763ehp00764aug-21-2002h12eic power 22eh11eh22e PDF

    ic power 22E

    Abstract: H12E h11E SMBT3906U 1N916 SC74 SMBT3904U EHP00768
    Contextual Info: SMBT3906U PNP Silicon Switching Transistor Array  High DC current gain: 0.1mA to 100mA 5 4 6  Low collector-emitter saturation voltage  Two galvanic internal isolated Transistors with good matching in one package 3 2  Complementary type: SMBT3904U (NPN)


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    smbt3906u100masmbt3904uvpw09197+10eha07175ehp00773ehp00764nov-30-2001ic power 22eh12eh11e1n916sc74ehp00768 PDF

    SMBT3906S

    Abstract: TRANSISTOR SMBT3906S 1N916 SMBT3904S VPS05604 H12E ic power 22E EHP00768
    Contextual Info: SMBT3906S PNP Silicon Switching Transistor Array 4  High DC current gain: 0.1mA to 100mA 5 6  Low collector-emitter saturation voltage  Two galvanic internal isolated Transistors with good matching in one package  Complementary type: SMBT3904S (NPN)


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    smbt3906s100masmbt3904svps05604+10eha07175ot363ehp00773ehp00764nov-30-2001transistor smbt3906s1n916h12eic power 22eehp00768 PDF

    3904

    Abstract: "marking s1a" sot-23 transistor 3904 1N916 3906 PNP transistor 3906 3904 TRANSISTOR npn h12e 3904 SOT23
    Contextual Info: SMBT 3904 NPN Silicon Switching Transistor 3 • High DC current gain: 0.1mA to 100mA • Low collector-emitter saturation voltage • Complementary type: SMBT 3906 PNP 2 1 Type Marking SMBT 3904 s1A Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23


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    100mavps05161ot-23oct-14-1999+13ehp00763ehp00764ehp00757ehp007583904marking s1a" sot-23transistor 39041n9163906 pnptransistor 39063904 transistor npnh12e3904 sot23 PDF

    sot23 s1a marking

    Contextual Info: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906


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    smbt3904mmbt3904smbt3904ssmbt3906+5mmbt3906smbt3904/mmbt3904ot363e6433sot23 s1a marking PDF

    H12E

    Abstract: h11e ic power 22E
    Contextual Info: SMBT3904U NPN Silicon Switching Transistor Array  High DC current gain: 0.1mA to 100mA 5 4 6  Low collector-emitter saturation voltage  Two galvanic internal isolated Transistors with good matching in one package 3 2  Complementary type: SMBT3906U (PNP)


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    smbt3904u100masmbt3906uvpw09197+7eha07178ehp00763ehp00764jul-02-2001h12eh11eic power 22e PDF

    ic power 22E

    Abstract: H12E h11e EHP00761 10K275 marking S1A
    Contextual Info: SMBT3904S NPN Silicon Switching Transistor Array 4  High DC current gain: 0.1mA to 100mA 5 6  Low collector-emitter saturation voltage  Two galvanic internal isolated Transistors with good matching in one package  Complementary type: SMBT3906S (PNP)


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    smbt3904s100masmbt3906svps05604+11eha07178ot363ehp00763ehp00764jul-02-2001ic power 22eh12eh11eehp0076110k275marking s1a PDF

    transistor marking S2A

    Abstract: SMBT3906U
    Contextual Info: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:


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    smbt3906mmbt3906smbt3906ssmbt3906u+7smbt3904mmbt3904smbt3904ssmbt3906s/ueha07175smbt3906/transistor marking s2a PDF

    Contextual Info: SMBT3904U NPN Silicon Switching Transistor Array  High DC current gain: 0.1mA to 100mA 5 4 6  Low collector-emitter saturation voltage  Two galvanic internal isolated Transistors with good matching in one package 3 2  Complementary type: SMBT3906U (PNP)


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    smbt3904u100masmbt3906uvpw09197+1eha07178 PDF

    SMBT3906U

    Contextual Info: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:


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    smbt3906mmbt3906smbt3906ssmbt3906u+6smbt3904mmbt3904smbt3904ssmbt3906s/ueha07175smbt3906/ PDF

    Contextual Info: SMBT3904.PN NPN / PNP Silicon Switching Transistor Array • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN / PNP transistor in one package SMBT3904PN SMBT3904UPN C1 B2 E2 6 5 4 TR2 TR1 1 2 3 E1 B1


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    smbt3904smbt3904pnsmbt3904upneha07177+1ot363 PDF

    Q62702-A1202

    Abstract: SMBT 3904S 1N916 3904S VPS05604
    Contextual Info: SMBT 3906S PNP Silicon Switching Transistor Array 4 • High DC current gain: 0.1mA to 100mA 5 • Low collector-emitter saturation voltage 6 • Two galvanic internal isolated Transistors with high matching in one package • Complementary type: SMBT 3904S (NPN)


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    3906s100ma3904svps05604+7ot-363q62702-a1202ehp00773ehp00764sep-07-1998smbt 3904s1n916 PDF

    3904S

    Abstract: 3904 1N916 Q62702-A1201 VPS05604 5b1 transistor VPS0560
    Contextual Info: SMBT 3904S NPN Silicon Switching Transistor Array 4 • High DC current gain: 0.1mA to 100mA 5 • Low collector-emitter saturation voltage 6 • Two galvanic internal isolated Transistors with high matching in one package • Complementary type: SMBT 3906S (PNP)


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    3904s100ma3906svps05604+8ot-363q62702-a1201ehp00764sep-07-199839041n9165b1 transistorvps0560 PDF

    Marking Package Code TF

    Contextual Info: SMBT3904.PN NPN / PNP Silicon Switching Transistor Array • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN / PNP transistor in one package • Pb-free (RoHS compliant) package • Qualified according AEC Q101


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    smbt3904smbt3904pnsmbt3904upneha07177+2ot363marking package code tf PDF