EHP00764 Search Results
EHP00764 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
sot23 s1a marking
Abstract: marking code S1A sot23
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smbt3904mmbt3904smbt3904ssmbt3906+5 | |
ic power 22E
Abstract: 3904U power 22E IC 1N916
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Original |
3904u100ma3906uvpw09197+8 | |
VPS05604
Abstract: H21E
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3904pnvps05604eha07177ot-363+5 | |
smbt3904upnContextual Info: SMBT3904UPN NPN/PNP Silicon Switching Transistor Array High current gain 4 5 6 Low collector-emitter saturation voltage Two galvanic internal isolated NPN/PNP Transistors in one package 3 2 1 Tape loading orientation VPW09197 Marking on SC74 package |
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smbt3904upnvpw09197eha07177 | |
SMBT3906UContextual Info: SMBT3906U PNP Silicon Switching Transistor Array High DC current gain: 0.1mA to 100mA 5 4 6 Low collector-emitter saturation voltage Two galvanic internal isolated Transistors with good matching in one package 3 2 Complementary type: SMBT3904U (NPN) |
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smbt3906u100masmbt3904uvpw09197+4 | |
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Contextual Info: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906 |
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smbt3904mmbt3904smbt3904ssmbt3906+3 | |
SMBT3906UContextual Info: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types: |
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smbt3906mmbt3906smbt3906ssmbt3906u+4 | |
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Contextual Info: SMBT3904.PN NPN / PNP Silicon Switching Transistor Array • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN / PNP transistor in one package • Pb-free (RoHS compliant) package • Qualified according AEC Q101 |
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smbt3904smbt3904pnsmbt3904upneha07177+1 | |
SC74
Abstract: SMBT3904 SMBT3904PN SMBT3904UPN 6C TRANSISTOR MARKING
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smbt3904smbt3904pnsmbt3904upneha07177+3 | |
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Contextual Info: SMBT3904.PN NPN / PNP Silicon Switching Transistor Array • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN / PNP transistor in one package SMBT3904PN SMBT3904UPN C1 B2 E2 6 5 4 TR2 TR1 1 2 3 E1 B1 |
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smbt3904smbt3904pnsmbt3904upneha07177+2 | |
h12e
Abstract: ic power 22E SMBT3904PN VPS05604 h11e h22e
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smbt3904pnvps05604ot-363eha07193+9 | |
ic power 22E
Abstract: H12E h11E SMBT3906U 1N916 SC74 SMBT3904U EHP00768
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smbt3906u100masmbt3904uvpw09197+10 | |
SMBT3906S
Abstract: TRANSISTOR SMBT3906S 1N916 SMBT3904S VPS05604 H12E ic power 22E EHP00768
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smbt3906s100masmbt3904svps05604+10 | |
3904
Abstract: "marking s1a" sot-23 transistor 3904 1N916 3906 PNP transistor 3906 3904 TRANSISTOR npn h12e 3904 SOT23
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100mavps05161ot-23oct-14-1999+13 | |
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sot23 s1a markingContextual Info: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906 |
Original |
smbt3904mmbt3904smbt3904ssmbt3906+5 | |
H12E
Abstract: h11e ic power 22E
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Original |
smbt3904u100masmbt3906uvpw09197+7 | |
ic power 22E
Abstract: H12E h11e EHP00761 10K275 marking S1A
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Original |
smbt3904s100masmbt3906svps05604+11 | |
transistor marking S2A
Abstract: SMBT3906U
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smbt3906mmbt3906smbt3906ssmbt3906u+7 | |
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Contextual Info: SMBT3904U NPN Silicon Switching Transistor Array High DC current gain: 0.1mA to 100mA 5 4 6 Low collector-emitter saturation voltage Two galvanic internal isolated Transistors with good matching in one package 3 2 Complementary type: SMBT3906U (PNP) |
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smbt3904u100masmbt3906uvpw09197+1 | |
SMBT3906UContextual Info: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types: |
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smbt3906mmbt3906smbt3906ssmbt3906u+6 | |
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Contextual Info: SMBT3904.PN NPN / PNP Silicon Switching Transistor Array • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN / PNP transistor in one package SMBT3904PN SMBT3904UPN C1 B2 E2 6 5 4 TR2 TR1 1 2 3 E1 B1 |
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smbt3904smbt3904pnsmbt3904upneha07177+1 | |
Q62702-A1202
Abstract: SMBT 3904S 1N916 3904S VPS05604
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Original |
3906s100ma3904svps05604+7 | |
3904S
Abstract: 3904 1N916 Q62702-A1201 VPS05604 5b1 transistor VPS0560
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Original |
3904s100ma3906svps05604+8 | |
Marking Package Code TFContextual Info: SMBT3904.PN NPN / PNP Silicon Switching Transistor Array • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN / PNP transistor in one package • Pb-free (RoHS compliant) package • Qualified according AEC Q101 |
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smbt3904smbt3904pnsmbt3904upneha07177+2 | |