EHP00763 Search Results
EHP00763 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
sot23 s1a marking
Abstract: marking code S1A sot23
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Original |
smbt3904mmbt3904smbt3904ssmbt3906+5 | |
ic power 22E
Abstract: 3904U power 22E IC 1N916
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Original |
3904u100ma3906uvpw09197+8 | |
VPS05604
Abstract: H21E
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Original |
3904pnvps05604eha07177ot-363+5 | |
smbt3904upnContextual Info: SMBT3904UPN NPN/PNP Silicon Switching Transistor Array High current gain 4 5 6 Low collector-emitter saturation voltage Two galvanic internal isolated NPN/PNP Transistors in one package 3 2 1 Tape loading orientation VPW09197 Marking on SC74 package |
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smbt3904upnvpw09197eha07177 | |
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Contextual Info: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906 |
Original |
smbt3904mmbt3904smbt3904ssmbt3906+3 | |
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Contextual Info: SMBT3904.PN NPN / PNP Silicon Switching Transistor Array • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN / PNP transistor in one package • Pb-free (RoHS compliant) package • Qualified according AEC Q101 |
Original |
smbt3904smbt3904pnsmbt3904upneha07177+1 | |
SC74
Abstract: SMBT3904 SMBT3904PN SMBT3904UPN 6C TRANSISTOR MARKING
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Original |
smbt3904smbt3904pnsmbt3904upneha07177+3 | |
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Contextual Info: SMBT3904.PN NPN / PNP Silicon Switching Transistor Array • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN / PNP transistor in one package SMBT3904PN SMBT3904UPN C1 B2 E2 6 5 4 TR2 TR1 1 2 3 E1 B1 |
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smbt3904smbt3904pnsmbt3904upneha07177+2 | |
h12e
Abstract: ic power 22E SMBT3904PN VPS05604 h11e h22e
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Original |
smbt3904pnvps05604ot-363eha07193+9 | |
3904
Abstract: "marking s1a" sot-23 transistor 3904 1N916 3906 PNP transistor 3906 3904 TRANSISTOR npn h12e 3904 SOT23
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Original |
100mavps05161ot-23oct-14-1999+13 | |
h11e
Abstract: SMBT3904UPN
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Original |
3904uvpw09197eha07177sc-74+6 | |
sot23 s1a markingContextual Info: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906 |
Original |
smbt3904mmbt3904smbt3904ssmbt3906+5 | |
H12E
Abstract: h11e ic power 22E
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Original |
smbt3904u100masmbt3906uvpw09197+7 | |
ic power 22E
Abstract: H12E h11e EHP00761 10K275 marking S1A
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Original |
smbt3904s100masmbt3906svps05604+11 | |
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Contextual Info: SMBT3904.PN NPN / PNP Silicon Switching Transistor Array • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN / PNP transistor in one package SMBT3904PN SMBT3904UPN C1 B2 E2 6 5 4 TR2 TR1 1 2 3 E1 B1 |
Original |
smbt3904smbt3904pnsmbt3904upneha07177+1 | |
Marking Package Code TFContextual Info: SMBT3904.PN NPN / PNP Silicon Switching Transistor Array • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN / PNP transistor in one package • Pb-free (RoHS compliant) package • Qualified according AEC Q101 |
Original |
smbt3904smbt3904pnsmbt3904upneha07177+2 | |
ic power 22E
Abstract: 3904S SMBT 3904S 1N916 VPS05604
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Original |
3904s100ma3906svps05604+8 | |
transistor marking s1aContextual Info: SMBT3904/ MMBT3904 NPN Silicon Switching Transistor 3 High DC current gain: 0.1mA to 100mA Low collector-emitter saturation voltage Complementary type: SMBT3906 PNP 2 1 Type SMBT3904/ MMBT3904 Marking s1A 1=B Pin Configuration 2=E 3=C VPS05161 Package |
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smbt3904/mmbt3904100masmbt3906+2 | |
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Contextual Info: SMBT3904U NPN Silicon Switching Transistor Array High DC current gain: 0.1mA to 100mA 5 4 6 Low collector-emitter saturation voltage Two galvanic internal isolated Transistors with good matching in one package 3 2 Complementary type: SMBT3906U (PNP) |
Original |
smbt3904u100masmbt3906uvpw09197+1 | |
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Contextual Info: SMBT3904UPN NPN/PNP Silicon Switching Transistor Array High current gain 4 5 6 Low collector-emitter saturation voltage Two galvanic internal isolated NPN/PNP Transistors in one package 3 2 1 Tape loading orientation VPW09197 Marking on SC74 package |
Original |
smbt3904upnvpw09197eha07177 | |
1N916
Abstract: MMBT3904 SMBT3904 SMBT3906 sot23 s1a marking sot23 transistor marking 12E
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Original |
smbt3904/mmbt3904100masmbt3906+6 | |
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Contextual Info: SMBT3904S NPN Silicon Switching Transistor Array 4 High DC current gain: 0.1mA to 100mA 5 6 Low collector-emitter saturation voltage Two galvanic internal isolated Transistors with good matching in one package Complementary type: SMBT3906S (PNP) |
Original |
smbt3904s100masmbt3906svps05604+2 | |
H21EContextual Info: SMBT3904PN NPN/PNP Silicon Switching Transistor Array 4 High current gain 5 6 Low collector-emitter saturation voltage Two galvanic internal isolated NPN/PNP Transistors in one package 2 3 1 Tape loading orientation VPS05604 Marking on SOT-363 package |
Original |
smbt3904pneha07193vps05604ot-363+3 | |
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Contextual Info: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S / SMBT3904U: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906 |
Original |
smbt3904mmbt3904smbt3904ssmbt3904u+5 | |