E2 MARKING CODE Search Results

1N4148WT

Abstract: 1N4448WT marking codes fairchild 1N914BWT 914BWT FAIRCHILD DIODE Fairchild marking change diode Fairchild Diode Marking Change
Contextual Info: 1N4148WT / 1N4448WT / 1N914BWT High Conductance Fast Switching Diode Features • • • • • • • Device Marking Code Device Type Device Marking 1N4148WT E1 1N4448WT E2 1N914BWT E3 Fast Switching Diode Trr <4.0nsec Flat Lead, Surface Mount Device Under 0.70mm Height

SOD-523 marking code E3

Abstract: SOD-523 E1 marking
Contextual Info: PRELIMINARY DATASHEET 200mW SOD-523 SURFACE MOUNT Very Small Outline Flat Lead Plastic Package General Purpose Application Fast Switching Diode Absolute Maximum Ratings Symbol PD TSTG TJ Device Type Device Marking TC1N4148WT TC1N4448WT TC1N914BWT E1 E2

DIN 6784 c1

Abstract: BCR108S BFS17S E6327 VPS05604
Contextual Info: BFS17S NPN Silicon RF Transistor 4 • For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363

marking s6 sot363

Contextual Info: CYStech Electronics Corp. SOT-363 Dimension Style: Pin 1. Emitter1 E1 Pin 2. Base1 (B1) Pin 3. Collector2 (C2) Pin 4. Emitter2 (E2) Pin 5. Base2 (B2) Pin 6. Collector1 (C1) Marking: 6-Lead SOT-363 Plastic Surface Mounted Package CYStek Package Code: S6 *:Typical

BCV62

Contextual Info: BCV 62 PNP Silicon Double Transistor • To be used as a current mirror • Good thermal coupling and VBE matching • High current gain • Low collector-emitter saturation voltage C2 1 C1 (2) Tr.1 Tr.2 E1 (3) E2 (4) EHA00013 Type Marking Ordering Code

Contextual Info: SIEMENS BCR183S PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit ►Built in resistor Ri = 10kii, R2 = 10k£2 Type Marking Ordering Code Pin Configuration BCR 183S WMs Package Q62702-C2377 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363

T-1233

Abstract: T1233-1 E k m QFN 3X3 2D22 T1233 AAAA Marking marking aaaa MO220 weed T12333
Contextual Info: NE - 1 X e E MARKING E/2 D2/2 (ND - 1) X e D/2 AAAA e CL D D2 k CL b 0.10 M C A B E2/2 L E2 CL 0.10 C CL 0.08 C A A2 A1 L L e e PACKAGE OUTLINE 12, 16L THIN QFN, 3x3x0.8mm 21-0136 F 1 2 PKG 12L 3x3 16L 3x3 REF. MIN. NOM. MAX. MIN. NOM. MAX. A 0.70 0.75 0.80

183S

Abstract: Q62702-C2377
Contextual Info: BCR 183S PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor R1 = 10kΩ, R2 = 10kΩ Type Marking Ordering Code Pin Configuration BCR 183S WMs Package Q62702-C2377 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363

Siemens SRS 20

Contextual Info: SIEMENS SIPMOS Small-Signal Transistors BSS 101 BSS 131 VDS = 240 V /D = 0 .1 3 /0 .1 0 A ^DSIonl = 1 6 0 • N channel • Enhancement mode • Packages: TO-92, SOT-231 Type Marking Ordering code for version on bulk Ordering code for version in tap e2)

6c2 transistor

Abstract: transistor marking MCs Q62702-F1645 transistor BFs 18 SOT 23 CODE MCS
Contextual Info: BFS 17S NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Tape loading orientation Type Marking Ordering Code Pin Configuration BFS 17S MCs 1/4=B1/B2 2/5=E1/E2 3/6=C2/C1 SOT-363 Q62702-F1645 Package Maximum Ratings of any single Transistor

Contextual Info: SPECIFICATION FOR APPROVAL REF : PROD. NAME ABC'S DWG NO. SHIELDED SMD POWER INDUCTOR PAGE: 1 SD1206□□□□1□ ABC'S ITEM NO. Ⅰ﹒MECHANICAL DIMENSIONS： D A B Marking Inductance code C M ： CLIP 3 4 For mounting fixed 1 J 4 P H N E F F2 E2 E1 3

Contextual Info: SPECIFICATION FOR APPROVAL REF : PROD. ABC'S DWG NO. SHIELDED SMD POWER INDUCTOR NAME PAGE: 1 SD1206□□□□L□ ABC'S ITEM NO. Ⅰ﹒MECHANICAL DIMENSIONS： D A B Marking Inductance code C M P1 E 3 H P2 F I J E2 F2 1 P N E1 ：CLIP 3 For mounting fixed

SMD INDUCTOR Marking Code

Abstract: marking code e1 smd INDUCTOR SMD MARKING CODE
Contextual Info: SPECIFICATION FOR APPROVAL REF : PROD. ABC'S DWG NO. SHIELDED SMD POWER INDUCTOR NAME PAGE: 1 SD1205□□□□1□ ABC'S ITEM NO. Ⅰ﹒MECHANICAL DIMENSIONS： D A B Marking Inductance code C M ： CLIP 3 4 For mounting fixed 1 J 4 P H N E F F2 E2 E1 3

marking R33 SMD

Abstract: SMD INDUCTOR marking code smd code marking mitsubishi marking code e1 smd H7642
Contextual Info: SPECIFICATION FOR APPROVAL PAGE: 1 REF : PROD. NAME SP1305□□□□L□-□□□ ABC'S DWG NO. SHIELDED SMD POWER INDUCTOR ABC'S ITEM NO. Ⅰ﹒MECHANICAL DIMENSIONS： D A B Marking Inductance code C M P1 E 3 P2 F I J E2 F2 1 H P N E1 ：CLIP 3 For mounting fixed

Contextual Info: SPECIFICATION FOR APPROVAL REF : PROD. ABC'S DWG NO. SHIELDED SMD POWER INDUCTOR NAME PAGE: 1 SD1205□□□□2□ ABC'S ITEM NO. Ⅰ﹒MECHANICAL DIMENSIONS： D A B Marking Inductance code C M 3 P2 F I J E2 F2 1 H P1 E P N E1 ： CLIP 3 For mounting fixed

bss138

Abstract: BSS98 siemens 350 98 Q62702-S566 Q62702-S558
Contextual Info: S I E M E N S SIPMOS " Small-Signal Transistors BSS 98 BSS 138 VDS = 50 V lD = 0 .3 /0 .2 2 A ^DS on = 3-5 O • N channel • Enhancement mode • Packages: TO-92, SOT-231) Type Marking Ordering code for version on bulk Ordering code for version in tap e2)

SMD INDUCTOR Marking Code

Abstract: marking code e1 smd smd code marking mitsubishi sp1206 marking code E2 SMD E104048 SMD MARKING CODE 7 sb E1 SMD MARKING CODE smd marking f2 h7642
Contextual Info: SPECIFICATION FOR APPROVAL REF : PROD. ABC'S DWG NO. SHIELDED SMD POWER INDUCTOR NAME PAGE: 1 SP1206□□□□L□-□□□ ABC'S ITEM NO. Ⅰ﹒MECHANICAL DIMENSIONS： D A B Marking Inductance code C M 3 P2 F I J E2 F2 1 H P1 E P N E1 ：CLIP 3 For mounting fixed

BCV61

Abstract: BCV61B BCV61C BFP181 E6327 VPS05178 transistor marking ac transistor marking T2
Contextual Info: BCV61 NPN Silicon Double Transistor 3 • To be used as a current mirror • Good thermal coupling and V BE matching • High current gain 4 • Low collector-emitter saturation voltage 2 C1 2 C2 (1) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00012 Type Marking

transistor marking T2

Contextual Info: BCV62 PNP Silicon Double Transistor 3
To be used as a current mirror
Good thermal coupling and VBE matching 4
High current gain
Low collector-emitter saturation voltage 2 C2 1 C1 (2) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00013 Type Marking Pin Configuration

e2 marking

Abstract: MARKING 120 sot143 BCV62 BCV62A BCV62B BCV62C BFP181 VPS05178 transistor marking E2 marking 3Ls
Contextual Info: BCV62 PNP Silicon Double Transistor 3
To be used as a current mirror
Good thermal coupling and VBE matching 4
High current gain
Low collector-emitter saturation voltage 2 C2 1 C1 (2) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00013 Type Marking Pin Configuration

marking 1ks

Abstract: BCV61
Contextual Info: BCV61 NPN Silicon Double Transistor 3
To be used as a current mirror
Good thermal coupling and VBE matching 4
High current gain
Low collector-emitter saturation voltage 2 C1 2 C2 (1) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00012 Type Marking Pin Configuration

PART NUMBER MARKING SC70-6

Abstract: pin configuration NPN transistor 2N3904 MARKING CODE 21 SC70
Contextual Info: FFB3946 FFB3946 E2 B2 C1 Package: SC70-6 Device Marking: .AB Note: The " . " dot signifies Pin 1 C2 B1 Transistor 1 is NPN device, Transistor 2 is PNP device. E1 NPN & PNP General Purpose Amplifier SC70-6 Surface Mount Package ThIs dual complementary device was designed for use as a general purpose amplifier and switching

250-36-UNS-2A

Abstract: BJ379 AD-BJ62-E1 PL75 plug sma .250-36uns-2a trompeter bnc trb PL75 twinax AD-BJ62-E3-PL75 250-36UNS-2A
Contextual Info: RED INDICATES ORIGINAL DISK # J5 DASH NO IDENT MARKING -1 -2 -3 -4 -5 -6 AD-BJ62-E1-PL75 AD-BJ62-E2-PL75 AD-BJ62-E3-PL75 AD-BJB2-E1-PL74 -7 DWG SIZE B DATA CONTAINED IN THIS DOCUMENT 18 PROPRIETARY TO TROMPETER ELECTRONICS INC. AND 8HALL NOT BE DISCLOSED. COPIEO OR USED

Contextual Info: MIXD80PM650TMI IGBT Modules Multi Level IC80 T1/T4 = 82 A IC80 (T2/T3) = 110 A VCES = 650 V VCE(sat) typ. = 1.5 V XPT IGBT Technology Part name (Marking on product) MIXD80PM650TMI + Th1 D1 G1 Th2 T1 E1 e NTC D5 D2 T2 iv G2 N E2 G3 U D3 T3 E3 t D6 G4 D4 T4