E11 DIODE Search Results

B78108-S1153-K

Abstract: V23809-E11-C10
Contextual Info: V23809-E11-C10 Single Mode 1300 nm ESCON 1x9 Transceiver Dimensions in mm inches (11.5 max) .453 max. View Z (Lead cross section and standoff size) (7.42—0.15) .292—.006 Optical Centerline (2) .080 (1.5±0.1) .06±.004 (0.73±0.1) .028±.004 (4±0.2) .158±.008

Contextual Info: 5bE D 3030^ GQG12DS 41b » V C T G aA s Infrared Emitting Diodes VT E11 1 3 , 16, 18 TO-46 Lensed Package — 940 nm E G & G VACTEC PACKAGE D IM EN SIO N S inch mm •206 ( S .2 3 ) 1 .0 0 ( 2 5 .4 ) CASE 24 TO-46 HERMETIC (LENSED) CHIP SIZE:.018-x.018-

B78108-S1153-K

Abstract: V23809-E11-C10
Contextual Info: V23809-E11-C10 Single Mode 1300 nm ESCON 1x9 Transceiver Preliminary Dimensions in mm inches (11.5 max) .453 max. View Z (Lead cross section and standoff size) (7.42–0.15) .292–.006 Optical Centerline (2) .080 (1.5±0.1) .06±.004 (0.73±0.1) .028±.004

Contextual Info: V23809-E11-C10 SIEMENS Single Mode 1300 nm ESCON 1x9Transceiver Prelim inary D im ensions in m m inches (11.5 max) .453 m ax. V ie w Z (Lead cro ss se ction and s ta n d o ff size) (7.42-0.15) .292-,006 Optical (2) .080 • ■ (4±0.2) ,158±.008 (a>

MDA2501

Abstract: pbl302 g1756 g1756 Diode MDA2502 MDA970A6 MDA3510 MDA2500 MDA3502 Bridge rectifier mda970a1
Contextual Info: DIOTEC ELECTRONICS CORP SflE D • Sfl^lG? ÜDOOlfl^ bTT WÊDIX Appendix IV: Cross Reference Tables <x^o\ _oZ_ SCHOTTKY BARRIER DIODES: INDUSTRY PART NO. 1N5817 1N5818 1N5819 1N5820 1N5821 1N5822 1N5823 1N5824 1N5825 MBR1035 MBR1045 MBR1050 MBR1060 MBR1090

C200

Abstract: BZV58
Contextual Info: BZV58 C10.BZV58 C200 5W 3 ; + 9   :   Absolute Maximum Ratings Symbol Conditions Axial lead diode  :    9 3= ; +  + 2 &% >   '  8  :    9  ? 1   2 @=        A   4  + BC2 @3

D9K DIODE

Abstract: diode JD e6e1 DIODE K9 JD ELECTRONICS k9 diode DIODE 19 9
Contextual Info: BZV58 C10.BZV58 C200 5W power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter 3 ; + 9   :   Absolute Maximum Ratings Symbol Conditions Axial lead diode  :    9 3= ; + 

Contextual Info: BZV58 C10.BZV58 C200 5W 3 ; + 9   :   Absolute Maximum Ratings Symbol Conditions Axial lead diode  :    9 3= ; +  + 2 &% >   '  8  :    9  ? 1   2 @=        A   4  + BC2 @3

TSC5304EDCP

Abstract: TSC5304EDCH marking E11 DIODE power transistor Ic 4A NPN to - 251
Contextual Info: TSC5304ED High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 0.25V (Typ.) @ IC=0.5A, IB=0.1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation

H 48 zener diode

Abstract: zener diode 12v 0.5 w 5,6v 1,3w zener diode marking E11 DIODE ZENER DIODE marking l2 BZX85C3V3-BZX85C56 zener diode BZX85C15 DO41 package BZX85C5V1 BZX85C7V5 zener 1.3W
Contextual Info: BZX85C3V3-BZX85C56 1.3W,5% Tolerance Zener Diode Small Signal Diode DO-41 Axial Lead HERMETICALLY SEALED GLASS D Features —Wide zener voltage range selection:3.3V to 56V C A —Vz Tolerance Selection of ±5% —Designed for through-Hole Device Type Mounting

marking E11 DIODE

Contextual Info: BZX85C3V3-BZX85C56 1.3W,5% Tolerance Zener Diode Small Signal Diode DO-41 Axial Lead HERMETICALLY SEALED GLASS D Features C ­Wide zener voltage range selection:3.3V to 56V A ­Vz Tolerance Selection of ±5% ­Designed for through-Hole Device Type Mounting

PDM5001

Abstract: PDT400N16 pah60n8cm PHMB50E6CL PHT250N16 PHT400N16 PD100KN16 PAH100N8CM PT76S16 PAT400N16
Contextual Info: Contents Page Rectifier Diode PH PC PD PE PF PB PT C2 C3 C4,C5 C5 C6 C6 C7,C8 Fast Recovery Diode PH-F, PC-F, PD-F P2H-F C9 C10 Schottky Barrier Diode PC-Q, PE-Q, PQ-Q P2H-Q C11 C12 Thyristor plus Diode PHT PDT PAT PFT PAH PCH PDH PKH PBH, PBH-A, PBF PGH

Contextual Info: EHAlpha Silicon Beamless Schottky Diodes P/N DME, DMF, DMJ Series Features • For Microwave M IC Assembly & Automated High Volume Manufacturing Lines ■ Mechanically Rugged Design ■ Three Barrier Heights for Optimized Mixer Performance ■ W ide Product Range Series Pair, Ring, Bridge

S3995

Abstract: SMS3992-00 SMS3994 S3996 SMS1528-00 SMS3991-10 Alpha Industries pin diodes SMS3990 SMS3991-50 MARKING S15
Contextual Info: Schottky Mixer and Detector Diodes in EOAlpha Surface Mount Plastic Packages SMS Sériés Features < Æ ° -Æ ^ - For High Volume Commercial Applications Small Surface Mount Packages S0D 323 S O T 23 S 0 T 143 Low Conversion Loss • Tight Parameter Distribution

Contextual Info: E3Alpha Silicon Beamless Schottky Diodes P/N DME, DMF, DMJ Series Features • For Microwave MIC Assembly & Automated High Volume Manufacturing Lines ■ Mechanically Rugged Design ■ Three Barrier Heights for Optimized Mixer Performance ■ Wide Product Range Series Pair, Ring, Bridge,

scw75

Contextual Info: Silicon Beamless Schottky Diodes S3A lpha Features • For Microwave M IC Assembly & Automated High Volume Manufacturing Lines ■ Mechanically Rugged Design ■ Three Barrier Heights for Optimized Mixer Performance ■ W ide Product Range: Series Pair, Ring, Bridge,

DME3927-000

Abstract: DME3930-000 DME3943-000 DMF3926 DMF3929 DMJ3928-000 DMJ3931-000 DMJ3944-000 551-056
Contextual Info: Silicon Beamless Schottky Diodes Ü A lp h Features • y For Microwave MIC Assembly & Automated High Volume Manufacturing Lines i j j m ib ■ Mechanically Rugged Design ■ Three Barrier Heights for Optimized Mixer Performance ■ Wide Product Range: Series Pair, Ring, Bridge,

E13 diode

Abstract: SPA548-01
Contextual Info: SPA548-01 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com HIGH VOLTAGE DIODE BRIDGE ASSEMBLY 5.5 kV / 2A Designer’s Data Sheet FEATURES: • • •

Contextual Info: SPA547-01 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com HIGH VOLTAGE DIODE BRIDGE ASSEMBLY 10.5 kV / 1.5A Designer’s Data Sheet FEATURES: • •

diode cross reference

Abstract: IN5408 equivalent DIOTEC Electronics IN5408 diode 1N4008 PBL302 rgp20 17 diode rectifier 1N4000 1n4004 1n4002 RP602 PBP205
Contextual Info: DIOTEC ELECTRONICS CORPORATION PRODUCT GUIDE TRUE VOID FREE VACUUM DIE SOLDERING SOFT GLASS DIODES HIGH VOLTAGE ULTRA FAST RECOVERY DISH DIODES TVS PRESS FIT WEB SITE: www.diotec-usa.com E-MAIL: Support@diotec-usa.com DIOTEC ELECTRONICS CORP. THE RECTIFIER SPECIALISTS

marking E13 diode

Abstract: marking E10 DIODE SPA548-01 E5 marking
Contextual Info: SPA548-01 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com HIGH VOLTAGE DIODE BRIDGE ASSEMBLY 5.5 kV / 2A Designer’s Data Sheet FEATURES: • • •

marking E10 DIODE

Abstract: DIODE MARKING 9X SPA547-01 helicoil unf marking E11 DIODE diode marking e8
Contextual Info: SPA547-01 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com HYPERFAST HIGH VOLTAGE DIODE BRIDGE ASSEMBLY 10.5 kV / 1.5A Designer’s Data Sheet FEATURES:

Contextual Info: DATA SHEET Silicon Beamless Schottky Diodes—Pairs and Quads Applications ● ● For microwave MIC assembly & automated high-volume manufacturing lines Mixers Features ● ● ● ● ● ● ● Mechanically rugged design Three barrier heights for optimized mixer performance

SKR141F15

Abstract: 60F15 skt 100-9 skt553 skt 450 skt 2500 diode skn 71 metal rectifier diode skr 130 SKN2016 SKN141F15
Contextual Info: 1998-2012:QuarkCatalogTempNew 9/20/12 3:56 PM Page 1998 Hermetically Sealed Diodes and Thyristors Hermetically Sealed Diode 10 Amp to 6000 Amp — Highest Industrial Standard RoHS SKN 20/16 SKR 26/16 INTERCONNECT TEST & MEASUREMENT 25 SKR 45/16 SKN 71/16 SKN 130/16