025NN Search Results

scw75

Contextual Info: Silicon Beamless Schottky Diodes S3A lpha Features • For Microwave M IC Assembly & Automated High Volume Manufacturing Lines ■ Mechanically Rugged Design ■ Three Barrier Heights for Optimized Mixer Performance ■ W ide Product Range: Series Pair, Ring, Bridge,

94 4311

Contextual Info: mm 1.00mm/1.27mm Pitch BGA Socket and Adapter FEATURES: • Any grid size availabe on 1.00mm pitch or larger ex.:1,27mm pitch. Consult BGA Footprint section of Product Data Sheets in Aries Electronics website, www.arieselec.com. • Reliable 3-finger female contact, which provides wiping action

tc55v2325ff application note

Abstract: 64KX32 TC55V2325FF TC55V2325FF-100
Contextual Info: TO SHIBA TC55V2325FF-100 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536 W O R D x 32 BIT Synchronous Pipelined Burst SRAM DESCRIPTION The TC55V2325FF is a 2,097,152 bit synchronous pipelined burst SRAM that is organized as 65,536 words by 32 bits and designed for use in a secondary cache to support MPUs which have burst

Contextual Info: EHAlpha Silicon Beamless Schottky Diodes P/N DME, DMF, DMJ Series Features • For Microwave M IC Assembly & Automated High Volume Manufacturing Lines ■ Mechanically Rugged Design ■ Three Barrier Heights for Optimized Mixer Performance ■ W ide Product Range Series Pair, Ring, Bridge

Contextual Info: E3Alpha Silicon Beamless Schottky Diodes P/N DME, DMF, DMJ Series Features • For Microwave MIC Assembly & Automated High Volume Manufacturing Lines ■ Mechanically Rugged Design ■ Three Barrier Heights for Optimized Mixer Performance ■ Wide Product Range Series Pair, Ring, Bridge,