E BFJ Search Results
E BFJ Price and Stock
Panasonic Electronic Components ECJ-0EBFJ105KCAP CER 1UF 6.3V X5R 0402 |
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ECJ-0EBFJ105K | Cut Tape |
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Panasonic Electronic Components ECJ-ZEBFJ104KCAP CER 0.1UF 6.3V X5R 0201 |
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ECJ-ZEBFJ104K | Reel |
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ECJ-ZEBFJ104K | 3,710 |
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ROHM Semiconductor BM61M22BFJ-CE2Galvanically Isolated Gate Drivers ISOLATION VOLTAGE 2500VRMS 1CH |
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BM61M22BFJ-CE2 | 2,280 |
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ROHM Semiconductor BM6GD11BFJ-LBE2Galvanically Isolated Gate Drivers 1CH GATE DRIVER |
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BM6GD11BFJ-LBE2 | 1,750 |
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ROHM Semiconductor BM61M22BFJ-EVK001Power Management IC Development Tools Evaluation board for BM61M22BFJ: The BM61M22BFJ-EVK001 board can be driving MOSFET and IGBT Power Devices. The Input-side power supply voltage is from 4.5 to 5.5 V. The output-side power supply is from 9 to 24 V. The BM61M22BFJ-C has Power Supply pro |
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BM61M22BFJ-EVK001 | 50 |
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E BFJ Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Tem ic TSC87C51 S e m i c o n d u c t o r s CMOS 0 to 33 MHz Programmable 8-bit Microcontroller Description T E M IC 's T S C 8 7 C 5 1 is h ig h p e rfo rm a n c e C M O S E P R O M v ersion o f th e 8 0C 51 C M O S sin g le ch ip 8 bit m icrocontroller. |
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TSC87C51 | |
ESE2200Contextual Info: Cwiwerciol Tolerance Sym. ÎÎT A ±0.2 A Signed Checked EE l *81 K.T K Y K.S K.T K Y K.O R ev i s i on Do t e « ST JS E * Fi a ft $ I S3 '03. 2.10 Addition o spec i f icotIon. '05.12. 1 Clarification of cons 1ruction of circuit. iliiSllJ&Bfjfii'lh FOR REFERENCE |
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ESE2200 ESE22MH23 151-ESE-22MH23( sw-151w-ese22mh23-std-r* | |
ms3eContextual Info: *imJ Model #& E )% ,4;\ Carbon film variable resistor @P+itM%4 Customer Specification Number @P+i#*iE& Customer Part Name iSP+k$P:Pa"af4 Customer Yart Number %+iRS& TOCOS Part Name R R E P M Signed by Rs1x=Exa##8e#t TOKYO COSMOS E L E C T R I C C O P,L T D . |
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07kFt ll3610-1 RY-7740 ms3e | |
Contextual Info: A p rii 199 9 P R ELI4 UNARY % M icro Linear ML6427 75Q. Quad Video Cable Drivers and Filters with Switchable Inputs GEN ERAL D ESCRIPTION FEATURES T h e M L6 42 7 is a q u a d 4 * - o id e r B u t t e iw orth b w p a s s le c o n stru c tio n f i t e r p l i s q u a d v id e o am p lif ie r o p t m iz e d |
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ML6427 | |
KY6 U6
Abstract: KY715 transistor KSA ky5 transistor
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NJU6004 11-down KY6 U6 KY715 transistor KSA ky5 transistor | |
j310
Abstract: J310 equivalent z60b J309 4dcm J309-J310 J309 application note MMBFJ309 MMBFJ310
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MMBFJ309 MMBFJ310 040ciS2 j310 J310 equivalent z60b J309 4dcm J309-J310 J309 application note MMBFJ310 | |
KT 819 transistor
Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
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Contextual Info: TDK Power Electronics World ttga»awwjtKafe»a?F*Ä# Ätt:MMosFET w»is?F*fmÄ»« »W,¿Ht â ^ S M .fflM iS u E tta il. e& JS#ÎËît£ÎI, ttty g ftS fll J i i J& £ £.IiKl*|3]±$t° «»ft » «MOSFET» aa*s*.EWM^ffiaíT JF/3Ê. ^ flS S M a a S ?F£7G#KIB£Jlffltt«9E&fT#a / BfJF, |
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PMBFJ108
Abstract: PMBFJ109 PMBFJ110
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bb53T31 PMBFJ108/PMBFJ109/ PMBFJ110 PMBFJ108) PMBFJ109) PMBFJ110) bbS3T31 0024DS1 PMBFJ108/PMBFJ109/PMBFJ110 PMBFJ108 PMBFJ109 PMBFJ110 | |
EZ 0710
Abstract: 4lu4e 234T0 J137 L437 lcd Inverter Delta 13 pin 20PM sharp lcd tv ics sharp lcd panel 20 pin
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949361Z121 EZ 0710 4lu4e 234T0 J137 L437 lcd Inverter Delta 13 pin 20PM sharp lcd tv ics sharp lcd panel 20 pin | |
3776a
Abstract: TXC10 TXC10 M 60 4085bc ATT1S04 CRS11 A87L 54871 att1rx04
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ATT1S04 005002b 3776a TXC10 TXC10 M 60 4085bc ATT1S04 CRS11 A87L 54871 att1rx04 | |
BFJ17Contextual Info: INI E^E llll Semelab Power Management Division 4 GENERATION POWER M O SFET PRODUCTS The 4th major development of Power MOSFET technology builds upon and improves upon the previous three series offered to the market. At present, the major types offered by almost all the main manufacturers are 3rd |
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BFJ17 BFJ16 BFJ15 BFJ12 BFJ11 BFJ10 BFJ27 BFJ26 BFJ25 BFJ22 | |
CL-21 capacitor
Abstract: BFJ309LT1 4505 IC equivalent BFJ310LT1 vk200 choke Cl-21 225
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MMBFJ309LT1 MMBFJ310LT1 O-236AB) BFJ309LT1 BFJ310LT1 CL-21 capacitor BFJ309LT1 4505 IC equivalent BFJ310LT1 vk200 choke Cl-21 225 | |
varactor 36z
Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
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Z1000 MZ4614 MZ4627 1N4099 M4L3052 M4L3056 1N5158 varactor 36z germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902 | |
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74AS888
Abstract: ic vertical la 78141 IC LA 78141 schematic D2822 equivalent sn74as888 74ALS96 74AS SERIES 74LS222 KJE y3 transistor TMS9900
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SN74AS888/890, SN74AS897, 16-Bit 74AS-EVM-8 SDV01IDV600R 74AS888 ic vertical la 78141 IC LA 78141 schematic D2822 equivalent sn74as888 74ALS96 74AS SERIES 74LS222 KJE y3 transistor TMS9900 | |
marking codes transistors SSs
Abstract: transistor 309 PMBFJ308 PMBFJ309 PMBFJ310 UCD219
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bb53T24 PMBFJ308/309/310 PMBFJ308: PMBFJ309: PMBFJ310: PMBFJ308, marking codes transistors SSs transistor 309 PMBFJ308 PMBFJ309 PMBFJ310 UCD219 | |
Contextual Info: NEC NPN SILICON TRANSISTOR ELECTRON DEVICE 2SC1674 DESCR IPTIO N The 2SC1674 is designed fo r use in FM RF am p lifie r and PAC KAG E DIM EN SIO N S local oscillator o f FM tuner. FE A TU R E S in millimeters inches 5 2 MAX. (0204 MAX.) • High gain bandw idth p roduct ( f t = 6 0 0 MHz TYP.) |
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2SC1674 2SC1674 | |
MPS-A92Contextual Info: SURGI LEAD MOUNTED TRANSISTORS NPN TRANSISTORS/TO-92 CASE 27 V SURGE PART NUMBER CEO hF E V c i / i c Volts 40 100-300 I'ces @ V ce fT ^& V CE/ I 'c c « e v ca V/mA max.V m A/m A m ax.nA V MHz V/mA m ax pF V 10/150 1.0 500/50 10" 60 min 300 20 20 80 |
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TRANSISTORS/TO-92 40min, PN2222A 2N3904 2N4401 MPSA05 MPSA06 40min. PN2907A 2N3906 MPS-A92 | |
485 COMATEL
Abstract: comatel
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diodeContextual Info: UB 41 U B 41 Double diode Fig. 1 T he U B 41, show ing th e electrode sy stem envelope a n d screening cage rem oved, ap jw o x im ately a c tu a l size . The U B 41 is an indirectly heated double diode which, as regards properties and applications, is identical w ith the E B 41. The only difference betw een |
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MN6047
Abstract: ozpf
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MN6047 MN6047 ozpf | |
5819Contextual Info: PRELIM INARY SPECIFICA TIO N SEC / THiN FILM HYBRID INTEGRATED C IR C U IT MC-5819 ElfCTRON DEVICE 6427525 N E C ELECTRONICS INC 72C 08414 D 550 MHz 18 dB INPUT CATV TRUNK AMPLIFIER r\ D E S C R IP T IO N A N D A P P L IC A T IO N S The MC-5819 is a thin film hybrid integrated circuit designed for V H F - C A T V application in the 40 to 550 MHz band. The MC- |
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MC-5819 MC-5819 MC-581 5819 | |
AC125K
Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
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76665N 76889N MA748PC MA709PC jA710PC A711PC iA712PC A723PC HA741PC A747PC AC125K 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram | |
PMBFJ111
Abstract: PMBFJ112 PMBFJ113 Silicon Junction FETs Scans-00472
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PMBFJ111/PMBFJ112/ PMBFJ113 PMBFJ111) MBB114 PMBFJ112) PMBFJ113) DD54DSS PMBFJ111/PMBFJ112/PMBFJ113 PMBFJ111 PMBFJ112 PMBFJ113 Silicon Junction FETs Scans-00472 |