E 212 JFET Search Results

Siliconix Dual N-Channel JFETs

Abstract: J210 211 siliconix
Contextual Info: Tem ic J210/211/212 Siliconix N-Channel JFETs Product Summary P a rt N um ber Vg s oK (V) V(BR)GSS ^ ' ,l ^ ; gfcM in (m S) 'I I dss Mi (mA) J210 - 1 to - 3 -25 4 2 J211 -2.5 to -4.5 -2 5 6 7 J212 —4 to - 6 -2 5 7 15 J211, For applications information seeAN104, page 12-21.

transistor j210

Abstract: J210 Siliconix JFETs Dual Siliconix N-Channel JFETs AN104 J211 J212
Contextual Info: J210/211/212 N-Channel JFETs Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 –1 to –3 –25 4 2 J211 –2.5 to –4.5 –25 6 7 J212 –4 to –6 –25 7 15 J211, For applications information see AN104, page 1.

Contextual Info: APT40M70JVR A DVAN CED PO W ER Te c h n o lo g y 400V 53A 0.070Q POWER MOSV Power MOS V'" is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

Contextual Info: APT40M70JVR A dvanced P o w er Te c h n o lo g y 400V 53A 0.070Í2 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

APT40M70JVR

Abstract: EN805
Contextual Info: • R A dvan c ed W/Æ P ow er Techno lo g y APT40M70JVR 4oov 53a o.o7oq POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT40M70JVR • R A dvanced W 'æ p o w e r Te c h n o l o g y ' 400v 53a 0.070q POWER MOS V‘ Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

2N3386

Abstract: 2N3384
Contextual Info: -zSemi-Conductot tPioduati, tfnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 p-channel JFETs designed for. • • • • Performance Curves PE See Section 5 Analog Switches Choppers Commutators

Contextual Info: A d van ced APT10050B2VR po w er Te c h n o l o g y 1000V 21A 0.5000 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

BO 615 DIODE

Abstract: E 212 JFET
Contextual Info: A d v a n c ed P o w er Tec h n o lo g y ' APT30M70BVR 300V 48A 0.070Í2 POWER MOS V Power MOS V is a new generation of high voltage N-Channe! enhancement mode power MOSFETs, This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

PT1201

Abstract: diode SM I600N
Contextual Info: A P T 1201 R 6B V R A dvanced P o w er Te c h n o lo g y ' 1200V sa i.600n POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

LF412C

Abstract: LF412CD LF412CDR LF412CP 19B7
Contextual Info: LF412C DUAL JFET-INPUT OPERATIONAL AMPLIFIER SLOSOIOB - MARCH 1987 - REVISED AUGUST 1994 Low Input Bias Current. . . 50 pA Typ Low Input Noise Current 0.01 pA/VHz Typ Low Supply Current. . . 4.5 mA Typ High Input impedance . . . 1012 a Typ Internally Trimmed Offset Voltage

Contextual Info: -Conaucto't \Pioaact i, One. dVs.s.iv TELEPHONE: 973 376-2922 (212) 227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. LSK389 ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET FEATURES ULTRA LOW NOISE en = 0.9nV/VHz (typ) TIGHT MATCHING IVGsi-2l = 20rnV max

Contextual Info: APT20M22B2VR A d va n ced P o w er Tec h n o lo g y 200V 100A 0.Q22C1 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

MOS 4016

Abstract: T4016B T40-16B
Contextual Info: A dvanced P ow er Te c h n o l o g y A P 400 ' 4016 T B V R 27A 0 160 2 V . Í POWER MOS V Power MOS V is a new generation of high voltage N-Channei enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

Contextual Info: APT10086BVR A dvanced po w er Te c h n o l o g y 1000V 13A 0.860£2 POWER MOS V‘ Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT50M80B2VFR

Abstract: ED 58A
Contextual Info: APT50M80B2VFR 500V POWER MOS V 58A 0.080W FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT8024B2VR APT8024LVR 800V 33A 0.240W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT6011B2VFR 600V POWER MOS V 49A 0.110W FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT50M85B2VR APT50M85LVR 500V 56A 0.085W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT6011B2VR

Contextual Info: APT6011B2VR APT6011LVR 600V 49A 0.110W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT12060B2VR

Abstract: APT12060LVR
Contextual Info: APT12060B2VR APT12060LVR 1200V 20A 0.600W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

diode 132

Contextual Info: APT8024B2VR APT8024LVR 800V 33A 0.240W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT20M18B2VR APT20M18LVR 200V 100A 0.018W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT5017BVFR A dvanced P o w er Te c h n o lo g y 500V POWER MOS V 30A 0.170Q FREDFET Power MOS V is a new generation of high voltage N-Channei enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V