DV 414 Search Results

99218

Abstract: POM7-256C Fluke 54200 HLE-115
Contextual Info: JULY 14, 1999 TEST REPORT #99218 QUALIFICATION TESTING HLE-115-Ol-L-DV TSM-115-04-L-DV SAMTEC CORPORATION APPROVED BY: MAX PEEL PRESIDENT AND DIRECTOR OF ADVANCED RESEARCH CONTECH RESEARCH, INC. L REVISION LEVEL DATE DESCRIPTION REVISION NO. - r INITIAL ISSUE

SM6G14

Abstract: SM6D14 211 ih H-17 SM3G45A SM3J45A SM6B14
Contextual Info: 138 - tt- 6 J,4 5 A o % to *> % V L 3 A, 400V—600V • » « Itt W t t id iS ¥ SM 3G45A SM 3 J4 5 A 400 600 I tsm 3 T c = lir C j 30/33 (50Hz/60Hz, I 2-t V d — V drm V tm I tm = 4 .5 A Vgt \ A aS Vgd I gm 2 A Ih 50 A / js dv/dl T, 125 X dv/dtio X Rlh

Contextual Info: International USSR Rectifier po-mois IRFBC40S/L PRELIMINARY HEXFET Power MOSFET • Surface Mount IRFBC40S • Low-profile through-hole (IRFBC40L) • Available in Tape & Reel (IRFBC40S) • Dynamic dv/dt Rating • 150°C Operating Temperature • Fast Switching

74HC00

Abstract: ixdp630 IXDP630 application note 3 phase ups schematic diagram make three phase ups schematic diagram IXDB4410 74HC00-1 IXBD4411PI 74hc00 oscillator circuit IXDD414
Contextual Info: EVBD4400 HALF BRIDGE DRIVER Evaluation Board Features Introduction • High to low side isolation of 1000V • Common-mode dv/dt immunity of greater than 50V/nanosecond • On-chip generated negative gate drive • Overcurrent protection by means of desaturation

TX02-4400PI

Contextual Info: EVBD4400 HALF BRIDGE DRIVER Evaluation Board Features Introduction • High to low side isolation of 1000V • Common-mode dv/dt immunity of greater than 50V/nanosecond • On-chip generated negative gate drive • Overcurrent protection by means of desaturation

HP70311A

Abstract: HP3610A HP54754A FOA1251B1 hp70841b FOA1252B1 G957 OC48 STM-16 TSSOP-16
Contextual Info: n io at rm fo In ce an ICs for Communications 2.5 Gbit/s, 3.3 V Transimpedance Amplifier Device Version 1.0 dv FOA1251B1, FOA1252B1 A High Gain 3.3 V Transimpedance Amplifier with Postamplifier for Tele- and Datacom Receiver Applications Advance Datasheet

EMC Filters

Contextual Info: EMC FILTERS Single-Phase Filters, Three-Phase Filters, Three-Phase + Neutral Line Filters, DC Filters, Screened Room Filters 3Ph+N , Output Ferrites, dV/dt Output Filters , Feedthrough Filters PREMO EMC Filters INTRODUCTION Electromagnetic Interference Most electronic equipment generates electromagnetic interference,which in some

SKHI 64

Abstract: Semidriver SKHI 64 semikron SKHI 64 SKHI64 connector 26 pin semikron connector "26 pin" din 41651 semikron 5045-04 Semidriver SKHI 64 mounting transistor VCE 900V SKHI 20
Contextual Info: SKHI 64 Absolute maximum ratings Symbol Term VS supply voltage non stabilized ViH input signal voltage high VCE collector emitter voltage (max.) rate of rise and fall of voltage dv/dt (secondary to primary side) isolation test voltage (AC, rms, 2 sec.) VisolIO

AUIRF7303Q

Abstract: auirf7303
Contextual Info: PD - 97654C AUTOMOTIVE GRADE AUIRF7303Q HEXFET Power MOSFET Features l l l l l l l l Advanced Planar Technology Dual N Channel MOSFET Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Lead-Free, RoHS Compliant Automotive Qualified*

Contextual Info: AUIRF7303Q AUTOMOTIVE GRADE HEXFET Power MOSFET Features l l l l l l l l l Advanced Planar Technology Dual N Channel MOSFET Low On-Resistance Logic Level Gate Drive Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Lead-Free, RoHS Compliant

RL-01802

Abstract: RL-00201 RL40003
Contextual Info: 3-Phase Reactors Line/Load Reactors • • • • • • • • • • Increase Drive System Reliability Filter Power Line Disturbances Reduce Harmonics Reduce Surge Currents Reduce dv/dt Extend Transistor Life Reduce Motor Noise and Temperature Reduce Voltage Doubling Effects

1RF9Z24

Abstract: IRF9Z24 RO25 xi 1507 1RF9Z24S
Contextual Info: PD-9.647A International «»Rectifier IRF9Z24 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V d ss = -6 0 V

Contextual Info: PD - 97654C AUTOMOTIVE GRADE AUIRF7303Q HEXFET Power MOSFET Features l l l l l l l l Advanced Planar Technology Dual N Channel MOSFET Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Lead-Free, RoHS Compliant Automotive Qualified*

SS1045

Abstract: 43171 46091 81714 DW 3432 47046 DATASHEET 5609 transistor ss109 SS10 SS104
Contextual Info: 8-,768 6 0,&21'8&725 0,&52&21752//(5 0$18$/ 3UHOLPLQDU\ 414 0%<3853 )50&049/; )$0,/< 0,&52&21752//(56 +$5':$5( 0$18$/ 0%<3853 )50&049/; )$0,/< 0,&52&21752//(56 +$5':$5( 0$18$/ (GLWLRQ 413 -XO\ 4<<: ” 4<<: )8-,768 /,0,7(' $OO 5LJKWV 5HVHUYHG1 &LUFXLW GLDJUDPV XWLOL]LQJ )XMLWVX SURGXFWV DUH LQFOXGHG DV D PHDQ RI LOOXVWUDWLQJ W\SLFDO

Contextual Info: International io« Rectifier • 0 0 1 4 ^ 3 2 374 ÊÊINR PD-9.912 IRF9Z24S INTERNATIONAL RECTIFIER HEXFET Power MOSFET • • • • • • • 4655452 b5E T> Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel

IRF5210

Contextual Info: PD 9.1434 International » » R e ctifie r IR F 5 2 1 0 PRELIMINARY HEXFET Power M O SFET • Advanced Process Technology • Ultra Low On-Resistancc • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated

pj 69 diode

Abstract: FL014 RVM SOT223 FL014 Example mosfet SOT-223 marking code IOR b41 sot223 Ir314 pj 66 diode ON52 AN-994
Contextual Info: International S Rectifier PD 9.1298 IRLL1905 PRELIMINARY HEXFET Power MOSFET • • • • • Surface Mount Dynamic dv/dt Rating Logic-Level Gate Drive Fast Switching Ease of Paralleling V dss = 55V f^DS on = 0.30Q Id = 1.6A D escription Fourth Generation HEXFETs from International Rectifier utilize advanced

Contextual Info: STE145N65M5 N-channel 650 V, 0.012 Ω typ., 143 A, MDmesh V Power MOSFET in a ISOTOP package Datasheet - preliminary data Features Order code VDS @Tjmax RDS on max STE145N65M5 710 V ID 0.015 Ω 143 A • Very low RDS(on) • Higher VDSS rating • Higher dv/dt capability

5566-4

Abstract: max3824
Contextual Info: P D 9 .1 6 1 5 International I R Rectifier FA38SA50 PRELIMINARY H E X F E T P o w er M O S F E T Fully Isolated Package Easy to Use and Parallel Low On-Resistance Dynamic dv/dt Rating Fully Avalanche Rated Simple Drive Requirements Low Drain to Case Capacitance

in4151

Abstract: 1N4532 1N4148 1N4149 1N4151 1N4152 1N914 1N914A 1N914B 1N916
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Part Number 1N914 1N 914A 1N 914B BV @ 100/1A Min. V I r @ 2 5 °C Max. (ri A) @ V r (V ) V f Max. (V ) @ I f (m A ) Co @ DV (pf) trr (77S E C ) Package Outline Package Outline Number 100 100 25 30 1.00 10 4 25 20 1.00

1n4148 D035

Abstract: DHD806 DHD800 1N916 JANTX JANTX 1N916 1N4532 DE104 DZ805 IN4305 1N4148
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Part Number 1N914 1N 914A 1N 914B BV @ 100/1A Min. V I r @ 2 5 °C Max. (ri A) @ V r (V) V f Max. (V ) @ I f (m A ) Co @ DV (pf) trr (77S E C ) Package Outline Package Outline Number 100 100 25 30 1.00 10 4 25 20 1.00

AD7751 Energy metering IC

Abstract: cd 1619 CP fm radio adp3420 HT 1000-4 power amplifier CHIP 8-PIN 2100 JRC AD80157 pin diagram for IC cd 1619 cp in fm pal 011 A SPEAKER OUTPUT IC 6 pin TRANSISTOR SMD CODE XI package SOT 363 AD7474
Contextual Info: NEW PRODUCT APPLICATIONS - 1 9 9 9 spring edition +3.0V TO +5.25V +5V 6-LEAD LOAD CELL AVDD +5V/+3V DV dd ^ +V REF A D 7730 +A| n - a in ADC 24 BITS -V ref GND fc. 6705 Millcteek Drive, Unit l, Mississauga, ON L5N 5R9 Tel.: 905 812-4400 • Fax(905) 812-4459

MIL-S-19500C

Abstract: IN4444 MIL-S-19500 1N4532 D035 in4445 1N4148 1N4149 IN4305 1N4152
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Part Number 1N914 1N914A 1N914B BV @ 100/1A M in. V I r @ 25°C Max. (ri A) @ V r (V) V f Max. (V) @ I f (m A) Co @ DV (pf) trr (77SEC) Package Outline Package O utline Number 100 100 25 30 1.00 10 4 25 20 1.00 20 4 100

triacs BTA 15 700

Abstract: BTA06 AHS-50 btb 15 600 b
Contextual Info: Æ T SCS-THOMSON *JÆ> nn S ll[LE®ra®R!lD Si BTA06 B/C BTB06 B/C STANDARD TRIACS FEATURES . HIGH SURGE CURRENT CAPABILITY . COMMUTATION : (dV/dt c> 5 V^is • BTA Family: INSULATING VOLTAGE= 2500V(RMS) (UL RECOGNIZED : E81734) DESCRIPTION The BTA/BTB06 B/C triac family are high perform­