DSEI 30-16 AS Search Results
DSEI 30-16 AS Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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S5LS10216ASPGEQQ1 |
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ARM Cortex-R4F Flash Microcontroller 144-LQFP -40 to 125 |
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S5LS20216ASZWTQQ1 |
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ARM Cortex-R4F Flash Microcontroller 337-NFBGA -40 to 125 |
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S5LS20216ASPGEQQ1 |
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ARM Cortex-R4F Flash Microcontroller 144-LQFP -40 to 125 |
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S5LS20216ASZWTQQ1R |
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Enhanced Product 16/32-Bit RISC Flash Microcontroller 337-NFBGA -55 to 125 |
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S5LS10116ASZWTQQ1 |
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ARM Cortex-R4F Flash Microcontroller 337-NFBGA -40 to 125 |
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DSEI 30-16 AS Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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E72873
Abstract: 30-10B
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OT-227 E72873 30-10B 31-10B E72873 30-10B | |
2x31-10b
Abstract: 2x30-10B ixys dsei 2x31-10b ixys dsei 2x30-10b 2x31 IXYS low voltage fast recovery rectifiers DSEI IXYS 2x31 IXYS DSEI 2
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OT-227 2x30-10B 2x31-10B 2x31-10b 2x30-10B ixys dsei 2x31-10b ixys dsei 2x30-10b 2x31 IXYS low voltage fast recovery rectifiers DSEI IXYS 2x31 IXYS DSEI 2 | |
30u60
Abstract: ixys dsei 8-06 ixys dsei STTH 3060 MUR 8120 ixys dsei 12-12 10U60 RHRG 8120 40U60 ixys dsei 60-06
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-200A/ TB60S TA60CS TA60C 04E120 09E120 30u60 ixys dsei 8-06 ixys dsei STTH 3060 MUR 8120 ixys dsei 12-12 10U60 RHRG 8120 40U60 ixys dsei 60-06 | |
Contextual Info: DSEI 120 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 C A Type IFAVM = 126 A VRRM = 600 V = 35 ns trr TO-247 AD C DSEI 120-06A A C A = Anode, C = Cathode Symbol Test Conditions IFRMS IFAVM ¬ IFAV IFRM TVJ = TVJM TC = 70°C; rectangular, d = 0.5 |
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O-247 20-06A | |
E72873
Abstract: 2x31
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OT-227 E72873 30-12B 31-12B E72873 2x31 | |
30-06AContextual Info: Fast Recovery Epitaxial Diode FRED VRSM V 640 VRRM DSEI 30 IFAVM = 37 A VRRM = 600 V = 35 ns trr C A Type TO-247 AD V 600 DSEI 30-06A C C A Symbol Test Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 85°C; rectangular, d = 0.5 t P < 10 µs; rep. rating, pulse width limited by TVJM |
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O-247 0-06A 30-06A | |
Contextual Info: Fast Recovery Epitaxial Diode FRED VRSM V 1000 VRRM DSEI 30 IFAVM = 30 A VRRM = 1000 V = 35 ns trr C A Type TO-247 AD V 1000 DSEI 30-10A C C A Symbol Test Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 85°C; rectangular, d = 0.5 t P < 10 µs; rep. rating, pulse width limited by TVJM |
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O-247 0-10A | |
Contextual Info: Fast Recovery Epitaxial Diode FRED VRSM V 1200 VRRM DSEI 30 IFAVM = 26 A VRRM = 1200 V = 40 ns trr C A Type TO-247 AD V 1200 DSEI 30-12A C C A Symbol Test Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 85°C; rectangular, d = 0.5 t P < 10 µs; rep. rating, pulse width limited by TVJM |
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O-247 0-12A | |
d 966Contextual Info: Fast Recovery Epitaxial Diode FRED DSEI 8 IFAVM = 8 A VRSM A V 640 VRRM VRRM = 600 V = 35 ns trr Type C TO-220 AC V 600 DSEI 8-06A C C A Symbol Test Conditions Maximum Ratings IFRMS IFAVM ① IFRM TVJ = TVJM TC = 115°C; rectangular, d = 0.5 t P < 10 µs; rep. rating, pulse width limited by TVJM |
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O-220 10rse d 966 | |
ixys dsei 2x30-12b
Abstract: 2x30-12b Epitaxial Diode FRED VRRM 1200 V 40 ns
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OT-227 2x30-12B ixys dsei 2x30-12b 2x30-12b Epitaxial Diode FRED VRRM 1200 V 40 ns | |
7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
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MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 | |
IXGH50N60BD1-P1
Abstract: ISOPLUS247TM 60N60U1
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ISOPLUS247TM 60N60U1 IC100 50/60Hz, IXGH50N60BD1-P1 IXGH50N60BD1-P1 ISOPLUS247TM 60N60U1 | |
OZ 9926Contextual Info: 8 7 4 5 6 REVISIONS PART NUMBER CODING _ _ M _ _ DSE _-S_ _ _ MATERIAL INSULATOR/CONTACT F E D MODIFICATION CODE E = PBT/PHOSPHOR BRONZE OPERATING TEMP: -65°C TO +125°C @ 3 AMPS PER CONTACT OPERATING TEMP: -65°C TO +105°C @ 5 AMPS PER CONTACT PROCESSING TEMP: 260°C FOR 10 SECS MAX |
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EBM22DSEH' -S328 C10872 Settings\Andy\Desktop\PDM-WIP\C10872, OZ 9926 | |
Contextual Info: □ IX Y S Advanced Technical Information Low VrP/ . IGBT u t s a t with Diode . ISOPLUS247 OES _ _ . ^025 ” 75 A ^ C E (s a t) ” 1-7 V (Electrically Isolated Back Surface) Symbol TestC onditions V v CGR Tj Tj V v GEM ^C25 ^C100 ^CM Maximum Ratings |
OCR Scan |
ISOPLUS247â 60N60U1 | |
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Composite Thermoplastic: Lightweight, Corrosion-Free Interconnect Solutions from Glenair
Abstract: ULTEM Outgassing Qwik Connect
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Contextual Info: n = T S G S -IH O M S O N ">Ji» [MI»i[LiÊiniB R!lDÊê ST 18952 DIGITAL SIGNAL P R O C ESSO R DSP) CHIP P R ELIM IN A R Y DATA • Programmable D950 Core ■ Data calculation unit ■ Address calculation unit ■ Program control unit ■ Fast and flexible buses |
OCR Scan |
66MIPS ST18952 ST18952 m52BC041, ST18952X66S | |
Contextual Info: r=Z SGS-THOMSON ST18952 DIGITAL SIGNAL P R O C E SSO R DSP CHIP PR E LIM IN A R Y DATA • Programmable D950 Core ■ Data calculation unit ■ Address calculation unit ■ Program control unit 16.5 Kwords data memory TAP ■ Fast and flexible buses ■ 66MIPS - 1 5 ns instruction cycle time |
OCR Scan |
ST18952 66MIPS ST18952X66S D950Core | |
PIR CONTROLLER LP 0001
Abstract: ED-9P PDCR 912 pdcr 921 23D31 D950 D950CORE ST18-AU1 dialnorm dynamic range dsei 17-12
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ST18-AU1 PIR CONTROLLER LP 0001 ED-9P PDCR 912 pdcr 921 23D31 D950 D950CORE ST18-AU1 dialnorm dynamic range dsei 17-12 | |
D950
Abstract: D952 ST18952 Ya13 SCR SN 102 YBs 70 YA11
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ST18952 66MIPS D950 D952 ST18952 Ya13 SCR SN 102 YBs 70 YA11 | |
Contextual Info: SGS-THOMSON ilUHgüMMÊi D950-CQRE 16-Bit Fixed Point Digital Signal Processor DSP Core PRELIMINARY DATA P erform ance • 66 Mips - 15ns instruction cycle time M em ory O rgan izatio n ■ HARVARD architecture ■ Two 64k x 16-bit data memory spaces ■ One 64k x 16-bit program memory space |
OCR Scan |
D950-CQRE 16-Bit 40-bit | |
vhdl code for 8-bit serial adder
Abstract: dse1 D950-CORE ieee floating point alu in vhdl vhdl code for 16 bit barrel shift register vhdl code for 8-bit adder
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D950-CORE 16-Bit 16-ights vhdl code for 8-bit serial adder dse1 D950-CORE ieee floating point alu in vhdl vhdl code for 16 bit barrel shift register vhdl code for 8-bit adder | |
eel 19 2005 transformer
Abstract: eel 19 2005 transformer spellman igbt gate driver circuit schematic schematic diagram igbt inverter welding machine
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B-720, eel 19 2005 transformer eel 19 2005 transformer spellman igbt gate driver circuit schematic schematic diagram igbt inverter welding machine | |
Contextual Info: DALLAS SEMICONDUCTOR DS3134 Preliminary Data Sheet V5 September 1, 1999 DALLAS SEMICONDUCTOR DS3134 CHATEAU CHAnnelized T1 and E1 And Universal HDLC CONTROLLER 256 Channel HDLC Controller that Supports up to 56 T1 or E1 Lines or Two T3 Lines Preliminary Data Sheet |
OCR Scan |
DS3134 DS3134 DS21FF42 DS21FT42 |