Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DSEI 30-16 AS Search Results

    DSEI 30-16 AS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    S5LS10216ASPGEQQ1
    Texas Instruments ARM Cortex-R4F Flash Microcontroller 144-LQFP -40 to 125 Visit Texas Instruments
    S5LS20216ASZWTQQ1
    Texas Instruments ARM Cortex-R4F Flash Microcontroller 337-NFBGA -40 to 125 Visit Texas Instruments
    S5LS20216ASPGEQQ1
    Texas Instruments ARM Cortex-R4F Flash Microcontroller 144-LQFP -40 to 125 Visit Texas Instruments
    S5LS20216ASZWTQQ1R
    Texas Instruments Enhanced Product 16/32-Bit RISC Flash Microcontroller 337-NFBGA -55 to 125 Visit Texas Instruments
    S5LS10116ASZWTQQ1
    Texas Instruments ARM Cortex-R4F Flash Microcontroller 337-NFBGA -40 to 125 Visit Texas Instruments

    DSEI 30-16 AS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    E72873

    Abstract: 30-10B
    Contextual Info: DSEI 2x 30 DSEI 2x 31 Fast Recovery Epitaxial Diode FRED VRRM V V 1000 1000 miniBLOC, SOT-227 B E72873 Type DSEI 2x 30-10B DSEI 2x 31-10B DSEI 2x30 DSEI 2x31 Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM TC = 50°C; rectangular, d = 0.5


    Original
    OT-227 E72873 30-10B 31-10B E72873 30-10B PDF

    2x31-10b

    Abstract: 2x30-10B ixys dsei 2x31-10b ixys dsei 2x30-10b 2x31 IXYS low voltage fast recovery rectifiers DSEI IXYS 2x31 IXYS DSEI 2
    Contextual Info: Fast Recovery Epitaxial Diodes FRED DSEI 2x30 IFAVM = 2x30 A DSEI 2x31 VRRM = 1000 V trr VRSM V 1000 VRRM miniBLOC, SOT-227 B Type V 1000 DSEI 2x30-10B DSEI 2x31-10B DSEI 2x30 DSEI 2x31 Symbol Test Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular, d = 0.5


    Original
    OT-227 2x30-10B 2x31-10B 2x31-10b 2x30-10B ixys dsei 2x31-10b ixys dsei 2x30-10b 2x31 IXYS low voltage fast recovery rectifiers DSEI IXYS 2x31 IXYS DSEI 2 PDF

    30u60

    Abstract: ixys dsei 8-06 ixys dsei STTH 3060 MUR 8120 ixys dsei 12-12 10U60 RHRG 8120 40U60 ixys dsei 60-06
    Contextual Info: Cross Reference List EmCon Diodes Product Name Company VRRM [V] Package IF @ [A] 125°C Typ VF [V] 25°C di/dt=-200A/µs VR=200V Typ Typ tRR [ns] Qrr [nC] 25°C 25°C 40 28 40 28 Special features Closest Infineon Equivalent IR IR HFA 04 HFA 04 TB60S TB60 600


    Original
    -200A/ TB60S TA60CS TA60C 04E120 09E120 30u60 ixys dsei 8-06 ixys dsei STTH 3060 MUR 8120 ixys dsei 12-12 10U60 RHRG 8120 40U60 ixys dsei 60-06 PDF

    Contextual Info: DSEI 120 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 C A Type IFAVM = 126 A VRRM = 600 V = 35 ns trr TO-247 AD C DSEI 120-06A A C A = Anode, C = Cathode Symbol Test Conditions IFRMS IFAVM ¬ IFAV ­ IFRM TVJ = TVJM TC = 70°C; rectangular, d = 0.5


    Original
    O-247 20-06A PDF

    E72873

    Abstract: 2x31
    Contextual Info: DSEI 2x 30 DSEI 2x 31 Fast Recovery Epitaxial Diode FRED VRRM V V 1200 1200 miniBLOC, SOT-227 B E72873 Type DSEI 2x 30-12B DSEI 2x 31-12B DSEI 2x 30 DSEI 2x 31 Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM TC = 50°C; rectangular, d = 0.5


    Original
    OT-227 E72873 30-12B 31-12B E72873 2x31 PDF

    30-06A

    Contextual Info: Fast Recovery Epitaxial Diode FRED VRSM V 640 VRRM DSEI 30 IFAVM = 37 A VRRM = 600 V = 35 ns trr C A Type TO-247 AD V 600 DSEI 30-06A C C A Symbol Test Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 85°C; rectangular, d = 0.5 t P < 10 µs; rep. rating, pulse width limited by TVJM


    Original
    O-247 0-06A 30-06A PDF

    Contextual Info: Fast Recovery Epitaxial Diode FRED VRSM V 1000 VRRM DSEI 30 IFAVM = 30 A VRRM = 1000 V = 35 ns trr C A Type TO-247 AD V 1000 DSEI 30-10A C C A Symbol Test Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 85°C; rectangular, d = 0.5 t P < 10 µs; rep. rating, pulse width limited by TVJM


    Original
    O-247 0-10A PDF

    Contextual Info: Fast Recovery Epitaxial Diode FRED VRSM V 1200 VRRM DSEI 30 IFAVM = 26 A VRRM = 1200 V = 40 ns trr C A Type TO-247 AD V 1200 DSEI 30-12A C C A Symbol Test Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 85°C; rectangular, d = 0.5 t P < 10 µs; rep. rating, pulse width limited by TVJM


    Original
    O-247 0-12A PDF

    d 966

    Contextual Info: Fast Recovery Epitaxial Diode FRED DSEI 8 IFAVM = 8 A VRSM A V 640 VRRM VRRM = 600 V = 35 ns trr Type C TO-220 AC V 600 DSEI 8-06A C C A Symbol Test Conditions Maximum Ratings IFRMS IFAVM ① IFRM TVJ = TVJM TC = 115°C; rectangular, d = 0.5 t P < 10 µs; rep. rating, pulse width limited by TVJM


    Original
    O-220 10rse d 966 PDF

    ixys dsei 2x30-12b

    Abstract: 2x30-12b Epitaxial Diode FRED VRRM 1200 V 40 ns
    Contextual Info: Fast Recovery Epitaxial Diodes FRED VRSM V 1200 VRRM DSEI 2x30 IFAVM = 2x28 A VRRM = 1200 V = 40 ns trr miniBLOC, SOT-227 B Type V 1200 DSEI 2x30-12B Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular, d = 0.5


    Original
    OT-227 2x30-12B ixys dsei 2x30-12b 2x30-12b Epitaxial Diode FRED VRRM 1200 V 40 ns PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original
    MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF

    IXGH50N60BD1-P1

    Abstract: ISOPLUS247TM 60N60U1
    Contextual Info: Advanced Technical Information IXGR 60N60U1 Low VCE sat IGBT with Diode ISOPLUS247TM VCES IC25 VCE(sat) = = = 600 V 75 A 1.7 V (Electrically Isolated Back Surface) Symbol Test Conditions Maximum Ratings ISOPLUS247TM (IXGR) VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ


    Original
    ISOPLUS247TM 60N60U1 IC100 50/60Hz, IXGH50N60BD1-P1 IXGH50N60BD1-P1 ISOPLUS247TM 60N60U1 PDF

    OZ 9926

    Contextual Info: 8 7 4 5 6 REVISIONS PART NUMBER CODING _ _ M _ _ DSE _-S_ _ _ MATERIAL INSULATOR/CONTACT F E D MODIFICATION CODE E = PBT/PHOSPHOR BRONZE OPERATING TEMP: -65°C TO +125°C @ 3 AMPS PER CONTACT OPERATING TEMP: -65°C TO +105°C @ 5 AMPS PER CONTACT PROCESSING TEMP: 260°C FOR 10 SECS MAX


    Original
    EBM22DSEH' -S328 C10872 Settings\Andy\Desktop\PDM-WIP\C10872, OZ 9926 PDF

    Contextual Info: □ IX Y S Advanced Technical Information Low VrP/ . IGBT u t s a t with Diode . ISOPLUS247 OES _ _ . ^025 ” 75 A ^ C E (s a t) ” 1-7 V (Electrically Isolated Back Surface) Symbol TestC onditions V v CGR Tj Tj V v GEM ^C25 ^C100 ^CM Maximum Ratings


    OCR Scan
    ISOPLUS247â 60N60U1 PDF

    Composite Thermoplastic: Lightweight, Corrosion-Free Interconnect Solutions from Glenair

    Abstract: ULTEM Outgassing Qwik Connect
    Contextual Info: Qwik Connect GLENAIR APRIL 2008 VOLUME 12 Composite Thermoplastic: Lightweight, Corrosion-Free Interconnect Solutions From Glenair NUMBER 2 QwikConnect The Future is Here, and It’s Made of Plastic F or many people, “plastic” means “cheap and breakable.” But when engineers search for new


    Original
    PDF

    Contextual Info: n = T S G S -IH O M S O N ">Ji» [MI»i[LiÊiniB R!lDÊê ST 18952 DIGITAL SIGNAL P R O C ESSO R DSP) CHIP P R ELIM IN A R Y DATA • Programmable D950 Core ■ Data calculation unit ■ Address calculation unit ■ Program control unit ■ Fast and flexible buses


    OCR Scan
    66MIPS ST18952 ST18952 m52BC041, ST18952X66S PDF

    Contextual Info: r=Z SGS-THOMSON ST18952 DIGITAL SIGNAL P R O C E SSO R DSP CHIP PR E LIM IN A R Y DATA • Programmable D950 Core ■ Data calculation unit ■ Address calculation unit ■ Program control unit 16.5 Kwords data memory TAP ■ Fast and flexible buses ■ 66MIPS - 1 5 ns instruction cycle time


    OCR Scan
    ST18952 66MIPS ST18952X66S D950Core PDF

    PIR CONTROLLER LP 0001

    Abstract: ED-9P PDCR 912 pdcr 921 23D31 D950 D950CORE ST18-AU1 dialnorm dynamic range dsei 17-12
    Contextual Info: ST18-AU1 SIX-CHANNEL DOLBY AC3/MPEG2 AUDIO DECODER PRELIMINARY DATA FEATURES • ■ ■ ■ Single chip multi-function audio decoder able to decompress DOLBY AC-3, MPEG-1 and MPEG-2 audio streams. ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Emulation unit and TAP


    Original
    ST18-AU1 PIR CONTROLLER LP 0001 ED-9P PDCR 912 pdcr 921 23D31 D950 D950CORE ST18-AU1 dialnorm dynamic range dsei 17-12 PDF

    D950

    Abstract: D952 ST18952 Ya13 SCR SN 102 YBs 70 YA11
    Contextual Info: ST18952 DIGITAL SIGNAL PROCESSOR DSP CHIP PRELIMINARY DATA • ■ ■ Programmable D950 Core ■ Data calculation unit ■ Address calculation unit ■ Program control unit ■ Fast and flexible buses ■ 66MIPS - 15 ns instruction cycle time 16.5 Kwords data memory (RAM)


    Original
    ST18952 66MIPS D950 D952 ST18952 Ya13 SCR SN 102 YBs 70 YA11 PDF

    Contextual Info: SGS-THOMSON ilUHgüMMÊi D950-CQRE 16-Bit Fixed Point Digital Signal Processor DSP Core PRELIMINARY DATA P erform ance • 66 Mips - 15ns instruction cycle time M em ory O rgan izatio n ■ HARVARD architecture ■ Two 64k x 16-bit data memory spaces ■ One 64k x 16-bit program memory space


    OCR Scan
    D950-CQRE 16-Bit 40-bit PDF

    vhdl code for 8-bit serial adder

    Abstract: dse1 D950-CORE ieee floating point alu in vhdl vhdl code for 16 bit barrel shift register vhdl code for 8-bit adder
    Contextual Info: D950-CORE 16-Bit Fixed Point Digital Signal Processor DSP Core • ■ ■ ■ ■ OUTPUT CLOCKS 16 XA-bus 16 YA-bus 16 CALCULATION 16 UNIT PROGRAM CONTROL UNIT 3 ID-bus 16 IA-bus 16 DATA MEMORY 6 ADDRESS PROGRAM MEMORY ■ UNIT VDD VSS ■ DATA CALCULATION


    Original
    D950-CORE 16-Bit 16-ights vhdl code for 8-bit serial adder dse1 D950-CORE ieee floating point alu in vhdl vhdl code for 16 bit barrel shift register vhdl code for 8-bit adder PDF

    eel 19 2005 transformer

    Abstract: eel 19 2005 transformer spellman igbt gate driver circuit schematic schematic diagram igbt inverter welding machine
    Contextual Info: HIGH VOLTAGE REFERENCE MANUAL 4/2014 REV. 4 Copyright 2014 Spellman High Voltage Electronics Corp. T E C H N I C A L R E S O U R C E S M A N U A L TABLE OF CONTENTS Spellman USA and Corporate HQ 475 Wireless Blvd. Hauppauge, NY 11788 United States tel: +1-631-630-3000


    Original
    B-720, eel 19 2005 transformer eel 19 2005 transformer spellman igbt gate driver circuit schematic schematic diagram igbt inverter welding machine PDF

    Contextual Info: DALLAS SEMICONDUCTOR DS3134 Preliminary Data Sheet V5 September 1, 1999 DALLAS SEMICONDUCTOR DS3134 CHATEAU CHAnnelized T1 and E1 And Universal HDLC CONTROLLER 256 Channel HDLC Controller that Supports up to 56 T1 or E1 Lines or Two T3 Lines Preliminary Data Sheet


    OCR Scan
    DS3134 DS3134 DS21FF42 DS21FT42 PDF