DS9971 Search Results

Contextual Info: Preliminary Technical Information TrenchMVTM Power MOSFET IXTH160N10T IXTQ160N10T VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ 100 100 V

200N10T

Abstract: N mosfet 100v 200A IXTV200N10TS PLUS220SMD
Contextual Info: IXTV200N10T IXTV200N10TS TrenchMVTM Power MOSFET VDSS ID25 = 100V = 200A Ω ≤ 5.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 175°C 100 V VDGR T J = 25°C to 175°C, RGS = 1MΩ

RT9971

Abstract: DS9971 lx129
Contextual Info: RT9971 7 CH Power Management IC General Description Features The RT9971 is a complete power supply solution for digital still cameras and other hand held devices. The RT9971 is a multi-channel power management IC including two stepup DC/DC converters, two step-down DC/DC converters,

Contextual Info: PreliminaryTechnical Information TrenchMVTM Power MOSFET VDSS ID25 IXTA180N10T7 RDS on = 100 V = 180 A Ω ≤ 6.4 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ

IXTH240N055T

Abstract: IXTQ240N055T 240N055T
Contextual Info: Preliminary Technical Information IXTH240N055T IXTQ240N055T TrenchMVTM Power MOSFET VDSS ID25 RDS on = 55 V = 240 A Ω ≤ 3.6 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ

180N10T

Contextual Info: PreliminaryTechnical Information TrenchMVTM Power MOSFET IXTA180N10T7 VDSS ID25 RDS on = 100 V = 180 A Ω ≤ 6.4 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ

IXTH160N10T

Abstract: IXTQ160N10T
Contextual Info: Preliminary Technical Information IXTH160N10T IXTQ160N10T TrenchMVTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ 100 100 V

motorola 9100-11

Abstract: Battery Managements MC33120 MC33120P mjd41 rs 3060 cj 1N4002 MC33120FN ST12 ST21
Contextual Info: 02/18/:0 06:24 To Keith Ellis From Motorola Mfax Ph: 602-244-6591 Fax: 602-244-6693 03/33 Order this data shoot by MC33120/D l o i f - i°fO MOTOROLA MC33120 SEMICONDUCTOR TECHNICAL DATA Subscriber Loop Interface Circuit SUBSCRIBER LOOP INTERFACE CIRCUIT SLIC

Contextual Info: Preliminary Technical Information TrenchMVTM Power MOSFET IXTH180N10T IXTQ180N10T VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 100 V = 180 A Ω ≤ 6.4 mΩ TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C

wiring VDG 13 relay

Abstract: MC33120 TIP 22 transistor MC33120P Battery Managements 20k301 darlington circuit tip 42 HB205 1N6290A MC33120FN
Contextual Info: Order this data sheet by MC33120/D MOTOROLA MC33120 SEMICONDUCTOR TECHNICAL DATA Subscriber Loop Interface Circuit SUBSCRIBER LOOP INTERFACE CIRCUIT SLIC The MC33120 is designed to provide the interface between the 4-wire side of a central office, or PBX, and the 2-wire subscriber line. Interface

Contextual Info: Preliminary Technical Information PolarHVTM HiPerFET Power MOSFET IXFN32N120P VDSS = 1200V 32A ID25 = Ω RDS on ≤ 0.31Ω ≤ 300 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

IXTH180N10T

Abstract: 180N10T IXTQ180N10T
Contextual Info: Preliminary Technical Information IXTH180N10T IXTQ180N10T TrenchMVTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 100 V = 180 A Ω ≤ 6.4 mΩ TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C

transistor tip 62

Abstract: MC33120 MC33120P wiring VDG 13 relay motorola mc33120 rs 3060 cj MC33120FN ST11 ST21 ST22
Contextual Info: Order this data sheet by MC33120/D MV « WP* MOTOROLA SEMICONDUCTOR TECHNICAL DATA Subscriber Loop Interface Circuit SUBSCRIBER LOOP INTERFACE CIRCUIT SLIC The MC33120 is designed to provide the interface between the 4-wire side of a central office, or PBX, and the 2-wire subscriber line. Interface

MC33120P

Abstract: DS9971 wiring VDG 13 relay radio equipment ml 15-e MC33120FN PEAK DETECTOR CIRCUIT SHORT NOTE rs 3060 cj simple SL 100 NPN Transistor 1N4002 TIP 42 transistor
Contextual Info: Order this data sheet by MC33120/D MV « WP* MOTOROLA SEMICONDUCTOR TECHNICAL DATA Subscriber Loop Interface Circuit SUBSCRIBER LOOP INTERFACE CIRCUIT SLIC The MC33120 is designed to provide the interface between the 4-wire side of a central office, or PBX, and the 2-wire subscriber line. Interface

200N1

Contextual Info: Preliminary Technical Information TrenchMVTM Power MOSFET VDSS ID25 IXTV200N10T IXTV200N10TS = 100 V = 200 A ≤ 5.5 m Ω RDS on N-Channel Enhancement Mode Avalanche Rated PLUS220 (IXTV) G Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C

Contextual Info: Preliminary Technical Information TrenchMVTM Power MOSFET IXTH240N055T IXTQ240N055T VDSS ID25 RDS on = 55 V = 240 A Ω ≤ 3.6 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ

Contextual Info: TrenchMVTM Power MOSFET VDSS ID25 IXTV200N10T IXTV200N10TS = 100V = 200A Ω ≤ 5.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 175°C 100 V VDGR T J = 25°C to 175°C, RGS = 1MΩ

IXFN32N120P

Abstract: 32N120P 32N120
Contextual Info: IXFN32N120P PolarTM HiPerFETTM Power MOSFET VDSS = 1200V ID25 = 32A Ω RDS on ≤ 310mΩ ≤ 300ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol miniBLOC E153432 Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ