IXFN32N120P Search Results

IXFN32N120P Datasheets (1)

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IXYS

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXFN32N120P		IXYS	FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 1200V 32A SOT-227B	Original	PDF		5

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Littelfuse Inc IXFN32N120P Mosfet Module, N-Ch, 1.2Kv, 32A, 1Kw; \|Littelfuse IXFN32N120P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark ()	IXFN32N120P	Bulk			1	1 $121.05 10 $121.05 100 $121.05 1000 $121.05 10000 $121.05	Buy Now
	IXFN32N120P	Bulk			300	1 - 10 - 100 - 1000 $60.25 10000 $56.92	Buy Now
RS	IXFN32N120P	Bulk		8 Weeks	10	1 - 10 $106.29 100 $106.29 1000 $106.29 10000 $106.29	Get Quote
Onlinecomponents.com	IXFN32N120P					1 - 10 - 100 $165.72 1000 $56.46 10000 $56.46	Buy Now
IXYS Corporation IXFN32N120P MOSFET Modules 32 Amps 1200V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	IXFN32N120P	Tube			300	1 - 10 - 100 - 1000 $64.04 10000 $64.04	Buy Now
TME	IXFN32N120P				1	1 $91.16 10 $72.34 100 $72.34 1000 $72.34 10000 $72.34	Get Quote

IXFN32N120P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Preliminary Technical Information PolarHVTM HiPerFET Power MOSFET IXFN32N120P VDSS = 1200V 32A ID25 = Ω RDS on ≤ 0.31Ω ≤ 300 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	ixfn32n120p 32n120p	PDF
32N120P Abstract: ixfn32n120p IXFN32N120 Contextual Info: PolarTM Power MOSFET HiPerFETTM IXFN32N120P VDSS = 1200V ID25 = 32A Ω RDS on ≤ 310mΩ ≤ 300ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ	Original	ixfn32n120p 300ns 32n120p 4-03-08-b +1ixfn32n120	PDF
IXFN32N120P Abstract: 32N120P 32N120 Contextual Info: IXFN32N120P PolarTM HiPerFETTM Power MOSFET VDSS = 1200V ID25 = 32A Ω RDS on ≤ 310mΩ ≤ 300ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol miniBLOC E153432 Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ	Original	ixfn32n120p 300ns e153432 nm/l100 +4100ms 32n120p 3-04-10-d 32n120	PDF
IXTD08N100P-1A Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2 Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types	Original	ixtd08n100p-1a ixtq22n60p ixfh20n80p dws20-200a +6ixfh24n80p ixfk180n15p ixtq22n50p dwhp16-12 ixgh64n60a3 ixfb50n80q2	PDF
1200 volt mosfet Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P Contextual Info: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET	Original	000-1200v ixfb30n120p ixfl30n120p ixfn30n120p +14ixfl32n120p ixfn32n120p plus220 ixfv110n10ps 1200 volt mosfet 1000 volt mosfet mosfet 300 volt hiperfet ixfn38n100 sot 227b diode fast transistor polar 2r4n120p ixfn44n100p ixfb44n100p	PDF