DS20 Search Results

DS4191

Contextual Info: DS2012SF MITEL @ Rectifier Diode S E M IC O N D U C T O R Supersedes August 1995 version, DS4191 - 2.3 DS4191 - 2.4 APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. March 1998 KEY PARAMETERS VRRM 6000V I F a v ,

04000k

Abstract: MXM8-PW27-0000 MXM8-PW57-0000 MXM8-PW57-000080 MXM8-PW35-0000 MXM8-PW65-0000 2850K 5700K MXM8-PW30 LED 3535
Contextual Info: Illumination Portfolio LUXEON Mid-Power 3535 LEDs Optimized solutions for illumination applications Technical Datasheet DS202 LUXEON Mid-Power 3535 LEDs Illumination Portfolio Introduction The LUXEON Mid-Power 3535 LED portfolio in this datasheet delivers optimized performance

DS2009

Abstract: DS2013
Contextual Info: DS2013 DALLAS SEMICONDUCTOR DS2013 8 1 9 2 x 9 FIFO Chip FEATURES PIN ASSIGNMENT • First-in, first-out memory-based architecture w c 1* D8C 2 D3C 3 • Flexible 8192 x 9 organization • Low-power HCMOS technology D2C 4 D1C 5 DOC 6 • Asychronous and simultaneous read/write

DS20

Abstract: msc23236c
Contextual Info: O K I S em ic o n d u cto r M S C 23236C /C L -X X B S 20/PS 20 2,097,152-Word x 36-Bit DRA M M ODULE : FAST PAGE M O D E TYPE DESCRIPTION The OKI MSC23236C/CL-xxBS20/DS20 is a fully decoded 2,097,152-word x 36-bit CMOS Dynamic Random Access Memory M odule com posed of sixteen 4-Mb DRAMs 1M x 4 in SOJ

ANA 608

Abstract: SC2383 DS20 OQ29
Contextual Info: MSC23836B-xxBS20/DS20 97.10.11 OKI semiconductor MSC23836B-xxBS20/DS20 8,388,608 Word By 36 Bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE G E N ER A L D ESC RIPTIO N The Oki MSC23836B-xxBS20/DS20 is a fully decoded, 8,388,608 word X 36 bit CMOS dynamic random

quad port ram

Abstract: DS2015 32-PIN D062 DS1206 DS2011 DS2012 DS2012R
Contextual Info: DALLAS SEMICONDUCTOR CORP OTE D | S b m i 3 G 0DDE12b 0 I T '^ 6 '3 5 & Dallas Semiconductor 4 096x9 FIFO PRELIMINARY : DS2012 28-Pin DIP DS2012R 32-Pin PLCC a“ FEATURES PIN CONNECTIONS • First-in, first-out memory based architecture • Flexible 4096 x 9 organization

Contextual Info: MCP41HVX1 Typical Performance Curves 1.0 TYPICAL PERFORMANCE CURVES Note: The following performance graphs are for the devices that are documented in the MCP41HVX1 data sheet DS20005207 . This document allows the MCP41HVX1 data sheet’s functional description to be in PDF

DS2064

Contextual Info: DALLAS SEMICONDUCTOR 4401 South Beltwood Parkway Dallas, Texas 75244–3292 214 450–0400 Date: July 2, 1996 Subject: PRODUCT CHANGE NOTICE – E63001 Description: Product Obsolescence: DS2064 Low–Voltage Option Description of Change: Effective September 30, 1996, all DS2064 devices will become 5–volt–only products. All low–voltage specifications for both AC and DC parameters will be removed from the DS2064 Data Sheet and

DS2013D

Abstract: DS2009R DS2010 DS2011D DS2015 DS1609 DS2013 "Dual-Port RAM" DS2010R DS2011
Contextual Info: DALLAS SEMICONDUCTOR 4401 South Beltwood Parkway Dallas, Texas 75244–3292 214 450–0400 Date: September 20, 1996 To: MET Laboratories, Baltimore, MD Subject: PRODUCT CHANGE NOTICE – H62901 Description: Product Obsolescence – DS20XX FIFO Family and

DS2016

Abstract: DS2016R DS2016S SEPTEMBER10
Contextual Info: DALLAS SEMICONDUCTOR 4401 South Beltwood Parkway Dallas, Texas 75244-3292 972 371-4000 Date: September 10, 1999 Product Change Notice – I91501 Subject: Package Obsolescence - DS2016S 2K x 8 3V/5V Operation Static RAM Description of Change: Effective October 30, 1999, Dallas Semiconductor will no longer produce or sell the DS2016S 2K

Contextual Info: DS2016 DALLAS SEMICONDUCTOR DS2016 2K x 8 3V/5V Operation Static RAM FEATURES PIN ASSIGNMENT • Low power CMOS design • Standby current - 50 nA max at tA = 25°C Vc c = 3.0V - 100 nA max at tA = 25°C V cc = 5.5V 1 |iA max at tA = 60°C Vc c = 5.5V • Full operation for V qc = 5.5V to 2.7V

Contextual Info: D S 2058 PRODUCT PREVIEW DALLAS SEMICONDUCTOR FEATURES DS2058 L i-Io n Battery M onitor PIN ASSIGNMENT • Protects and individually monitors three or four Li-Ion series cells for overvoltage, undervoltage, and over­ current • Designed for battery pack integration:

Contextual Info: DS2015 PRELIMINARY DALLAS SEMICONDUCTOR FEATURES DS2015 Quad Port Serial RAM Chip PIN CONNECTIONS • Four partitioned easy access ports • No arbitration required • Message flag for each port RSTOC 1 18 □ Vcc CLKO C 2 17 Ü R S T 3 DQO H 3 16 □ CLK3

Contextual Info: DS2015 DALLAS s e m ic o n d u c to r DS2015 Q uad Port Serial RAM Chip PIN ASSIGNMENT FEATURES • Four partitioned easy access ports RSTO [ • No arbitration required CLKO • Message flag for each port [_2 15 ] 5 17 14 ] 13 ] CLK3 DQ3 M3 M2 CLK1 C 7 12 ]

Contextual Info: DALLAS SEMICONDUCTOR DS2012 4096 x 9 FIFO Chip FEATURES PIN ASSIGNMENT w c 1 26 □ • Flexible 4096 x 9 organization D8C 2 D3C 3 27 • Low-power H C M O S technology D 2C 4 • Asychronous and simultaneous read/write D iC 5 DOC 6 25 24 c 7 FF C 8 QOC 9

DS2003

Contextual Info: DS2003 High Current/Voltage Darlington Drivers General Description The DS2003 is comprised of seven high voltage, high current NPN Darlington transistor pairs. All units feature common emitter, open collector outputs. To maximize their effectiveness, these units contain suppression diodes for

DS2016

Abstract: DS2016-100 DS2016-150 DS2016R DS2016S
Contextual Info: DS2016 2k x 8 3V/5V Operation Static RAM www.dalsemi.com FEATURES § § § § § § § § § § § Low-power CMOS design Standby current − 50 nA max at tA = 25°C VCC = 3.0V − 100 nA max at tA = 25°C VCC = 5.5V − 1 µA max at tA = 60°C VCC = 5.5V Full operation for VCC = 5.5V to 2.7V

K19 FET

Abstract: plc fire protection DS1265W DS2065W DS2065W-100
Contextual Info: Rev 0; 1/05 DS2065W 3.3V Single-Piece 8Mb Nonvolatile SRAM Features The DS2065W is a 8Mb reflowable nonvolatile NV SRAM, which consists of a static RAM (SRAM), an NV controller, and an internal rechargeable manganese lithium (ML) battery. These components are encased in

DS2003

Abstract: DS2003CN Deutsch Relays DS2003CM DS2003TM DS2003TN M16A N16E Darlington pair IC
Contextual Info: DS2003 High Current/Voltage Darlington Drivers General Description The DS2003 is comprised of seven high voltage, high current NPN Darlington transistor pairs. All units feature common emitter, open collector outputs. To maximize their effectiveness, these units contain suppression diodes for

DS1270W

Abstract: DS2070W-100 DS2070W
Contextual Info: Rev 0; 8/06 3.3V Single-Piece 16Mb Nonvolatile SRAM Features The DS2070W is a 16Mb reflowable nonvolatile NV SRAM, which consists of a static RAM (SRAM), an NV controller, and an internal rechargeable manganese lithium (ML) battery. These components are encased in

Contextual Info: Rev 1; 5/06 DS2050W 3.3V Single-Piece 4Mb Nonvolatile SRAM The DS2050W is a 4Mb reflowable nonvolatile NV SRAM, which consists of a static RAM (SRAM), an NV controller, and an internal rechargeable manganese lithium (ML) battery. These components are encased in

DS2016S

Abstract: DS2016S-100 DS2016
Contextual Info: DALLAS SEMICONDUCTOR 4401 South Beltwood Parkway Dallas, Texas 75244–3292 214 450–0400 Date: February 28, 1996 Subject: PRODUCT CHANGE NOTICE – B60801 Description: DS2016 200ns to 250ns Change Description of Change: Effective May 1, 1996, the specified 3–volt access time of the DS2016 will change from 200ns to 250ns.

RX-6 TX-6

Abstract: DS209 IXP2800 ML450 ML550 VIRTEX-5 DDR PHY DCM02
Contextual Info: SPI-4.2 v8.4 DS209 August 8, 2007 Product Specification Introduction LogiCORE Facts Core Specifics Device Family Alignment Type Performance Mbps /Speed LUT/Flop Pairs 64-bit static 622–700/-1,-2,-3 Rx: 2000 Tx: 2600 Rx: 6 Tx: 6 128-bit static 622–700/-1,-2,-3

MSC23840D

Abstract: AN8388
Contextual Info: This version: Mar. 6. 2000 Previous version: Mar. 8. 1999 Semiconductor MSC23840D-xxBS20/DS20 8,388,608-word x 40-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The MSC23840D-xxBS20/DS20 is an 8,388,608-word x 40-bit CMOS dynamic random access memory module