DS0807 Search Results

DS1304

Abstract: aem r10k SMP3316-103M ds1303 renco 4r7 SMTDR54-120M smtdr75 SMTDR75-680K SMTDR75-221K MLF1608A1R0KT
Contextual Info: Bourns P/N CI100505-1N0D CI100505-1N2D CI100505-1N5D CI100505-1N8D CI100505-2N2D CI100505-2N7D CI100505-3N3D CI100505-3N9D CI100505-4N7D CI100505-5N6D CI100505-6N8J CI100505-8N2J CI100505-10NJ CI100505-12NJ CI100505-15NJ CI100505-18NJ CI100505-22NJ CI100505-27NJ

Contextual Info: RF3146 RF3146QuadBand GSM850/GSM 900/DCS/PCS Power Amp Module QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE Part of the POLARIS TOTAL RADIO™ Solution RoHS Compliant & Pb-Free Product Package Style: LFM, 48-Pin, 7 mm x 7 mm x 0.9 mm Features „ Integrated VREG

920mhz

Contextual Info: RF3807 RF3807GaAs HBT Pre-Driver Amplifier GaAs HBT PRE-DRIVER AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: SOIC-8 Features „ Output Power>0.5W P1dB „ High Linearity „ High Power-Added Efficiency „ Thermally-Enhanced Packaging „ VREF 1 NC

material declaration taiyo yuden

Contextual Info: RF5110G 3V GSM POWER AMPLIFIER „ 57% Efficiency „ 800MHz to 950MHz Operation „ Supports GSM and E-GSM „ „ „ „ „ GPRS Compatible Commercial and Consumer Systems Portable Battery-Powered Equipment FM Radio Applications: 150MHz/220MHz/ 450MHz/865MHz/915MHz

HDR 1X4

Contextual Info: RF5125 3V TO 5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER VCC NC VC1 NC RoHS Compliant & Pb-Free Product Package Style: QFN, 16-Pin, 3 x 3 16 15 14 13 NC 1 12 RF OUT/ VC2 RF IN 2 11 RF OUT Features „ „ 28dB Typical Small Signal Gain 10 RF OUT RF IN 3 50Ω Input and Interstage Matching

Contextual Info: RF2369 3V LOW NOISE AMPLIFIER/ 3V PA DRIVER AMPLIFIER NOT FOR NEW DESIGNS RoHS Compliant & Pb-Free Product Package Style: SOT 6-Lead Features „ „ „ VREF/PD GND1 RF IN „ NO T FO R „ 6 SELECT 2 5 GND2 3 4 RF OUT Functional Block Diagram Product Description

IN50

Abstract: J-STD-033A RF5924 RF5924PCBA-41X f antenna balun 2.4ghz bth 200 bth 068 metal detector cck diagram
Contextual Info: RF5924 RF59243.7 V, Single-Band Front-End Module 3.7V, SINGLE-BAND FRONT-END MODULE RoHS Compliant & Pb-Free Product Package Style: 3.5mmx3.5mm RX IN+ 5 Balun RX IN- 4 Features „ „ „ „ D3-Chip P_DETECT 12 Single-Module Radio Front-End VCC 13 Single Supply Voltage 3.1V to

Contextual Info: NLB-310 NLB-310Cascadable Broadband GaAs MMIC Amplifier DC to 10GHz CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz RoHS Compliant & Pb-Free Product Package Style: Micro-X, 4-Pin, Plastic Features ̈ ̈ ̈ ̈ ̈ GND 4 Reliable, Low-Cost HBT Design 12.7dB Gain, +12.6dBm

Contextual Info: RF2363 DUAL-BAND 3V LOW NOISE AMPLIFIER NOT FOR NEW DESIGNS Package Style: SOT, 8-Lead „ „ „ „ „ „ Low Noise and High Intercept Point 18dB Gain at 900MHz 21dB Gain at 1900MHz Low Supply Current Single 2.5V to 5.0V Power Supply Very Small SOT-23-8 Plastic

Contextual Info: RF5187 RF5187Low Power Linear Amplifier LOW POWER LINEAR AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: SOIC-8 Slug Features „ Single 3V to 6V Supply 10dBm to 20dBm Ultra Linear Output Power RF IN 1 8 RF OUT „ 14dB Gain at 2.14GHz RF IN 2 7 RF OUT

Contextual Info: RF5189 RF51893V, 2.45GHz Linear Power Amplifier 3V, 2.45GHz LINEAR POWER AMPLIFIER +30dBm Saturated Output Power 25dB Small Signal Gain „ High Linearity 2400MHz to 2500MHz Frequency Range IEEE802.11B WLAN Applications „ 2.5GHz ISM Band Applications „ Wireless LAN Systems

A00025

Abstract: RF S-parameters
Contextual Info: RF3800 RF3800GaAs HBT Pre-Driver Amplifier GaAs HBT PRE-DRIVER AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: AlN Features „ 6W Output Power „ High Linearity „ >50% Efficiency „ „ „ VREF 1 Thermally-Enhanced AlN Packaging NC 2 7 RF OUT RF IN 3

GSM900

Abstract: RF3802 RF3802PCBA-410 RF3802PCBA-411 pocket Scale block diagram for grams msl 9350
Contextual Info: RF3802 RF3802GaAs HBT Pre-Driver Amplifier GaAs HBT PRE-DRIVER AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: AlN Features „ 5W Output Power „ High Linearity „ 35% Power-Added Efficiency „ „ Thermally Enhanced AlN Packaging VCC1 1 8 RF OUT/VCC2

SDSP0804

Contextual Info: Power Inductors Shielded-SMT Drum 8 x 4 mm SDSP0804 Series POWER INDUCTORS Used in high frequency DC/DC converters. Magnetically shielded for low EMI radiation. Low resistance and high energy storage. Robust base for reflow soldering. Inductance range from 1.0 µH to 100 µH.

TXM RX-3

Abstract: GaN limiter RX90
Contextual Info: RF7115 QUAD-BAND GSM850/GSM900/DCS/PCS TRANSMIT MODULE RoHS Compliant & Pb-Free Product Package Style: Module 7mmx8mm GSM GaAs Die pHEMT Switch LB RF IN 2 Features „ VSENSE 1 Reduced Solution Size Integrating Antenna Switch and Harmonic Filtering to Decrease Time

X6855M

Abstract: X6866D EPCOS SAW X6966M X6964D X6857D EPCOS SAW X6855M RF3330 RF3330PCBA-41X X6965M X6966M
Contextual Info: RF3330 RF3330IF Gain Controlled Amplifier IF GAIN CONTROLLED AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: SOT23-8 Features „ „ „ „ Single 5V Positive Power Supply 26dB Gain Range 150MHz Bandwidth Compact Package Applications „ „ „ VCC 1

GAAS FET AMPLIFIER 3400 Mhz

Abstract: gsm based electronic notice board EGSM900 GSM900 RF3166PCBA-410
Contextual Info: RF3166 RF3166QuadBand GSM850/GSM 900/DCS/PCS Power Amp Module QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE RoHS Compliant & Pb-Free Product Package Style: Module, 6 mm x 6 mm Features „ Ultra-Small 6mmx6mm Package Size „ Integrated VREG „ Complete Power Control Solution

Contextual Info: RF2878 3V LOW NOISE AMPLIFIER/ 3V PA DRIVER AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: SOT 5-Lead Features „ „ „ „ „ Low Noise and High Intercept Point Adjustable Bias Current Power Down Control Single 2.5V to 5.0V Power Supply 150MHz to 2500MHz Operation

Contextual Info: FPD3000 FPD30002W Power pHEMT 2W POWER pHEMT 0.47mmx0.83mm Die Product Description Features The FPD3000 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx3000μm Schottky barrier gate, defined by high resolution stepper-based photolithography. The recessed gate structure minimizes

Contextual Info: RF5117 3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER +30dBm Saturated Output Power „ High Linearity „ „ VCC VCC 14 13 RF IN 1 12 RF OUT BIAS GND1 2 11 RF OUT PWR SEN 3 10 RF OUT Bias PWR REF 4 1800MHz to 2800MHz Frequency Range +17dBm PO, 11G, <3% EVM 9 NC

Contextual Info: RF2364 RF23643 V PCS Low Noise Amplifier 3V PCS LOW NOISE AMPLIFIER NOT FOR NEW DESIGNS Package Style: SOT 5-Lead GENERAL PURPOSE AMPLIFIERS LNAs, HPAs, LINEAR AMPS 3 Features Low Noise and High Intercept Point 18dB Gain „ Power Down Control „ Single 3.0V Power Supply

Contextual Info: RF2460 PCS CDMA LOW NOISE AMPLIFIER/MIXER 1500MHz TO 2200MHz DOWNCONVERTER NOT FOR NEW DESIGNS VCC1 VCC2 LO IN NC „ NO T „ NC LNA GAIN MIX GAIN 1 15 LNA OUT 2 14 ISET1 3 13 ISET2 4 12 MIX IN 5 11 LNA2 E 6 7 8 9 10 IF- NC * * Represents "GND". Functional Block Diagram

RF2174

Abstract: gsm based electronic notice board RF3108 RF2173 RF3108PCBA-41X Gan hemt transistor x band dcs response time 33F50 31084
Contextual Info: RF3108 RF3108TripleBand GSM/DCS/PC S Power Amp Module TRIPLE-BAND GSM/DCS/PCS POWER AMP MODULE Package Style: Module 9mmx10mm Features „ „ „ „ „ „ Single 2.9V to 4.7V Supply Voltage +35.5dBm GSM Output Pwr at 3.5V +33.0dBm DCS/PCS Output Pwr at 3.5V

Contextual Info: FPD1050 FPD1050 0.75W Power pHEMT 0.75W POWER pHEMT Package Style: Bare Die Product Description Features The FPD1050 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx1050μm Schottky barrier gate, defined by highresolution stepper-based photolithography. The double recessed gate structure