DQ0D Search Results

sak transistors

Abstract: 051S 2SA1205 FM20
Contextual Info: m SAKJ *F32>-¿3 V^HDTMl DQ0DSÔ7 S 3SE P SANKEN ELECTRIC CO LTD m Silicon PIMP Epitaxial Planar Application Example : • Outline Drawing 2 " " -•M T-10 T03P General Purpose • Test Circuit . . y&'zA v-''*1 Conditions

t25 4 e9

Abstract: 12v/DIODE t25 4 e9
Contextual Info: aw m SAKJ *F32>-¿3 V^HDTMl DQ0DSÔ7 S 3SE P SANKEN ELECTRIC CO LTD j*kV Silicon PIMP Epitaxial Planar Application Example : • Outline Drawing General Purpose 2—‘ -•M T-10 T03P • Test Circuit . . Symbol V cbo V

Contextual Info: KODENSHI CORP r z 2SE D i. 7 x h > & — y y \ ^ P H O T O P A R L 1N G T O N S PT-23F{iN m S242t.0fl DQ0D17S S • y K £ M z m a tl D '> ' □ > 7 $ !•$ ■ * » DIMENSIONS (Unit:mm) * b y - V> h The PT-23F, a high-output NPN silicon photodarlington

ML405

Abstract: 6CTB
Contextual Info: MICRO LINEAR Q3E D | DQ0DE32 3 I Micro Linear ML405 50MHz PHASE LOCK OSCILLATOR Advanced Data Sheet Description: Charge Pump Features: The ML405 contains the core building blocks needed to create a high performance data separator for disk drive applications. The ML405 operates with a single 5V

MT240

Contextual Info: HARKTECH INTERNATIONAL 55E D • S7T=Jb5S DQ0D737 331 ■ HKT Standard T-l LED Lamps FEATURES • Excellent on/off contrasts • Wide viewing angle • Solid state reliability • Choice of clear or diffused lens • Available in five colors/materials MAXIMUM RATINGS Ta = 25°Q

ma2027

Abstract: PH1214-80M
Contextual Info: t,3E D 5L42E05 DQ0DÖM3 57T MAP MICROWAVE PULSED POW ER TRANSISTOR PH1214-8.0M PRELIMINARY REV. NC 05/05/92 n/A-con * M/A-COM PHI, INC. p h o DESIGN CHARACTERISTICS 100 uS Pulse Operation Broadband 1.2 -1.4 GHz Operation Common Base Configuration Gold Metallization System

L-34RD

Contextual Info: KINGBRIGHT ELECTRONIC ETE D • 5117004 DQ0DD40 3 ■ Kingbright Electronic Co., Ltd. Mail Address: P.O.Box 81-153 Taipei, Taiwan Telex No. : 22249 TWN KIN Cable Address : "TWN KIN" Taipei Telephones : 715-2848 • 713-0682 L-34 T-1 3m m ROUND LED LMAP 1" LONG PIN

basic architecture of intel 80286

Abstract: intel 8259 programmable interrupt controller intel 8254 intel 80286 ibm at motherboard 80286 8259 Programmable Peripheral Interface Intel 8237 Intel 8237 dma interfacing of memory devices with 80286 PE5010
Contextual Info: FARADAY ELECTRONICS INC 03 » F | 34flb347 DQ0D335 S |~~ CPU Core Logic for Model 50/60 Compatibles r - v ? - / 7 -oi FE5400 F e a tu re s • Four-chip core logic implementation for 80286-based IBM PS/2 Model 50 or 60 compatible computers • Operates at high

OC-11

Abstract: 2SA1205 T03P LO5A
Contextual Info: V^HDTMl DQ0DSÔ7 S m SAKJ *F32>-¿3 3SE ì> SANKEN ELECTRIC CO LTD m Silicon PIMP Epitaxial Planar Application Example : p£&á • Outline Drawing 2 ” " -•M T-10 T03P General Purpose • Test Circuit . !*Z-*fjL V - - '« E le c tric a l C h a ra c te ristic s

tr8c

Abstract: TMS28F200
Contextual Info: TMS28F20ÛBZT, TMS28F200BZB 262144 BY 8-BIT/131072 BY 16-BIT BOOT-BLOCK FLASH MEMORIES SWS2dOO - JUNE 1 9 9 4 - REVISED SEPTEMBER 1997 • ■ I I I • • • • • • • • • • Organization . . . 262144 by 8 bits 131072 by 16 bits Array-Blocking Architecture

SMNS405A

Abstract: cms405 CMS408 CMS406
Contextual Info: CMS405, CMS406 4 MEGABYTE CMS407, CMS408 2 MEGABYTE DRAM MEMORY CARDS SMNS405A-JUNE1991-REVISED JANUARY 1993 * Credit Card Size 85.6 mm x 54 mm x 60-PIN MEMORY CARD (CONNECTOR VIEW 3.4 mm) Single 5-V Power Supply (±5% Tolerance) * Enhanced Page Mode Operation

NCC equivalent

Contextual Info: TMS29F400T, TMS29F400B 524288 BY 8-BIT/262144 BY 16-BIT FLASH M EMORIES • I • Single Power Supply Supports 5 V ± 10% Read/Write Operation I I • Organization . . . I • Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector - Two 8K-Byte/4K-Word Parameter Sectors

27C020-12

Abstract: 27PC020-12 LS020 A1025 LS020B 2097152-BIT
Contextual Info: TMS27C020 2097152-BIT UV ERASABLE PROGRAMMABLE TMS27PC020 2097152-BIT PROGRAMMABLE READ-ONLY MEMORY SM LS020B - N O V E M B E R 1990 - REVISED JU N E 1995 • Organization . . . 256K x 8 J PACKAGE TOP VIEW • Single 5-V Power Supply • Operationally Compatible With Existing

Contextual Info: SMJ416160, SMJ418160 1048576-WORD BY 16-BIT HIGH-SPEED DRAM 1 SGMS720A - APRIL 1995 - REVISED JUNE 1995 XXX PACKAGE TOP VIEW ACCESS ACCESS ACCESS TIME TIME TIME '41x160-60 41x160-70 '41x160-80 • • • • • • • • tRAC MAX 60 ns 70 ns SO n* *CAC

s29f

Contextual Info: TMS29F040 4194304-BIT FLASH MEMORY S M J S 8 2 0 A - A P R IL 1 9 9 6 - R E V IS E D J A N U A R Y 1 9 9 7 I * Single Power Supply 5 V ± 10% FM PACKAGE T O P V IE W cm lo co co O r~. < < < < > I5 < i— i l — i l — il— i l — i l — il— i 4 '

27C510

Abstract: pc51020 SMJ27C510 pc510-20
Contextual Info: TMS27C510 524 288-BIT ERASABLE PROGRAMMABLE READ-ONLY MEMORY TMS27PC510 524 288-BIT PROGRAMMABLE READ-ONLY MEMORY SMLS51OA-AUGUST 1990-REVISED JANUARY 1993 J AND N PACKAGESÎ TOP VIEW Organization . . . 64K x 8 Single 5-V Power Supply V pp [ Pin Compatible With Existing 1 Meg MOS

Contextual Info: SMJ44C250 262 144 BY 4-BIT MULTIPORT VIDEO RAM SGMS037 — JANUARY 1991 * Military Operating Temperature Range JD Package* Top View . . , - 5 5 ° C t o 125°C DRAM: 262 144 Words SAM: 512 Words * * * x x 4 Bits 4 Bits 28 : 27 : 3 26 : SDQ2 TRG c 4 25 :

E3235

Contextual Info: TOSHIBA TENTATIVE TC59WM815/07/03BFT-70,-75,-80 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX16-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDSX4BANKSX8-BITS SYNCHRONOUS DYNAMIC RAM 16,777,216-WORDSX4BANKSX4-BITS SYNCHRONOUS DYNAMIC RAM

Contextual Info: TMS28F040 4 194 304-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY SMJS040-DECEMBER 1992 N PACKAGET Organization . . . 512K x 8 Separately Erasable 32K Byte Blocks Two Power Supplies 5 V and 12 V 100% TTL-Level Control Inputs Fully Automated On-Chip Erase and Byte

Video RAM

Abstract: TMS55165
Contextual Info: TMS55165 262144 BY 16-BIT MULTIPORT VIDEO RAM SMVS165B-AUGUST1992-flEVISED JANUARY 1993 DGH PACKAGEt TOP VIEW DRAM : 262 144 Words x 16 Bits SAM: 256 Words x 16 Bits Dual Port Accessibility - Simultaneous and Asynchronous Access From the DRAM and SAM Ports

44460D

Abstract: BK36C-80
Contextual Info: TM124MBK36C, TM124MBK36S1048576 BY 36-BIT TM248NBK36C, TM248NBK36S 2097152 BY 36-BIT DYNAMIC RAM MODULE SMMS138B - MARCH 1992 - REVISED JUNE 199S Enhanced Page Mode Operation With CAS-Before-RAS CBR , RAS-Only, and Hidden Refresh Presence Detect Performance Ranges:

Contextual Info: TMS27C020 2 097152 BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY TMS27PC020 2 097152 BIT PROGRAMMABLE READ-ONLY MEMORY SMLSO 2 O A-N OVEM BER 18 9 0 -R E V IS E P JANUARY 1993 x J PACKAGEt TOP VIEW 8 Single 5-V Power Supply Vpp[ Operationally Compatible With Existing

Contextual Info: TM124MBK36B, TM124MBK36R1 048 576 BY 36-BIT DYNAMIC RAM MODULE TM248NBK36B, TM248NBK36R 2 097152 BY 36-BIT DYNAMIC RAM MODULE S M M S 1 3 7 D - J A N U A R Y 1 9 9 1 - R E V IS E D J A N U A R Y 1993 * * * * * * * * * * Organization TM124MBK36B . . . 1 048 576 x 36

Contextual Info: TMS418160A 1048576 BY 16-BIT DYNAMIC RANDOM-ACCESS MEMORY S M K S 891C - A U G U S T 1996 - R EVISED O C TO BE R 1997 This data sheet is applicable to TMS418160As symbolized by Revision “E” and subsequent revisions as described in the device symbolization section.