DQ01 Search Results

SML1216W

Contextual Info: 7 t^ D 7 4 1 DQ01bl2 fl4b ISAKJ « ä iM I i Ä . '. • ? " SANKEN SANKEN LIGHT EMITTING DIODES - ,7 ,r • , - '■ : ë , l - j- '■'■■■ . ¿ ií:4 ■■ T-1 3 /4 Bicolor Light Emitting Diode SML1216W SML1516W SML1616C FEATURES • Bright 3 Color Red, Green and Yellow

Eupec diode

Abstract: AL 1450 DV
Contextual Info: EUPEC blE D • 34032T7 DQ01211 OLM H U P E C AD 60 F Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values Periodische VorwärtsSpitzensperrspannung repetitive peak forward off-state voltage t.jj — —40°C . tvj max

4-40NC-2B

Contextual Info: _ D TbE • b34bf i GS DQ01MT4 Ô7Ô ■ MSL Series Single Pole Multi-Position Slide Switches Contact rating: 200 mA at 125 VAC or 30 VDC • • • • • 1P3T MSL33 .906 [2 3 .0 0 ] mA N O T IC E W ITH O U T Actuator: Steel Terminal seal: Epoxy

Photodiode vactec

Abstract: Photodiode-Array
Contextual Info: BOBGbDT DQ01D76 7Ô7 • V C T 5bE D VTP Process Photodiodes E G 8. G VTP6085/2IR T-41-51 VACTEC PACKAGE DIMENSIONS inch mm .5 55 (14 10) CASE 15B PRODUCT DESCRIPTION Dual channel, common cathode, large area planar silicon photodiode array mounted in a three lead TO-8 hermetic

6DI15S-050

Abstract: 6DI10A-050 IC M605 6di30a-120 1DI100MA-050 6DI30A-050 EVF31H-035 2DI150M-120 M605 1DI200M-120
Contextual Info: COLLMER SEMICONDUCTOR INC MAE D I 25307=12 DQ01574 5GÛ « C O L <& Power Darlington Modules 4 PACK/6 PACK VCEX' VCEO Device Type Vceo Volts VCEO Volts sus Volts ic Pc cont. Watts Amps (per Xstr) Switching time (Max.) ton ts tf jisec. usee. ^sec. Ic Amps.

Contextual Info: D S 1 2 3 0 Y /A B DALLAS SEMICONDUCTOR FEATURES DS1 230Y/ AB 256K N onvolatile SRAM PIN ASSIGNMENT A14 111 281 A12 112 E 271IW A7 113 261IA13 A6 114 251IA8 A5 115 241IA9 A4 116 231IA11 A3 117 221I A2 118 211I A10 A1 119 201I^ A0 1110 191I DQ7 DQ01111 181I DQe

itt inc resistor

Abstract: GD4583
Contextual Info: GOLDSTAR TECHNOLOGY INC-, G4E D ~| 40EA7S7 DQ01ÔS4 B T-57-ZI 4 0 2 8 7 5 7 GOLDSTAR TECHNOLOGY I N C . 04E 0 1 8 2 4 D GD4583B DUAL SCHM ITT TRIGGER j PROGRAM M ABLE THRESHOLDS PROGRAM M ABLE HYSTERESIS TRUE A N D COMPLEMENT A R Y OUTPUTS A V A IL A B L E

LC6502

Abstract: LC6500 LC6510 LC6510C
Contextual Info: SANYO SEMICONDUCTOR CORP 7b C</ DE^ V W O T t . DQ01ÖH4 0 t 'LC651 OC c -m o s L S i CIRCUIT DRAWING N0.101S SINGLE-CHIP 4-BIT MICROCOMPUTER FOR USE IN CONTROL-ORIENTED APPLICATIONS ^ 3 0 ^ ÌP ^ The LC6510C is a high-end model belonging to the single-chip 4-bit microcomputer LC6500 series fabri­

m28 transistor

Abstract: 2SC2340 NE56900 NE56953E NE56954 NE56987 S21E
Contextual Info: N E C / .CALIFORNIA 1SE D N E ' H b427414 DQ01331 3 NE56900 NE56953E NE56954 NE56987 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • A M P L IF IE R P E R F O R M A N C E : 550 mW with 11.5 d B Gain at 2 GHz 425 mW with 7.5 d B Gain at 4 G H z

lm814

Abstract: ID32-001
Contextual Info: TOSHIBA TC59LM814/06BFT-22,-24,-30 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM DESCRIPTION TC59LM814/06BFT are a CMOS Double Data Rate Fast Cycle Random Access Memory DDR

Contextual Info: E2G1059-18-74 O K I Semiconductor This version: Jul. 1998 MSM5716C50/M SM 5718C50/ M D5764802 16M/18Mb 2M x 8/9 & 64Mb (8M x 8) Concurrent RDRAM DESCRIPTION The 1 6 /1 8 /64-M egabit C oncurrent Ram bus DRAMs (RDRAM ) are extrem ely hi'ghVspeed CMOS DRAMs organized as 2M or 8 M w ords by 8 or 9 bits. They are capable of bursting- linlimi ted

AS8S512K3

Contextual Info: ADVANCED iPEM 64 Mb ASYNC SRAM AS8S2M32PEC 64Mb, 2Mx32 CMOS 3.3V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES DESCRIPTION Integrated Real-Time Memory Array Solution No latency or refresh cycles Parallel Read/Write Interface

Contextual Info: iPEM 2.4Gb SDRAM-DDR AS4DDR32M72PBG1 32Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR SDRAM Data Rate = 200, 250, 266, 333Mbps Package: • 208 Plastic Ball Grid Array PBGA , 16 x 23mm-1.0mm pitch 2.5V ±0.2V core power supply

Contextual Info: iPEM 2.4 Gb SDRAM-DDR2 AS4DDR232M72PBG 32Mx72 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • 255 Plastic Ball Grid Array PBGA , 25 x 32mm

IS46R16160B

Abstract: zentel is43r16160b
Contextual Info: IS43R83200B, IS46R83200B IS43R16160B, IS46R16160B 32Mx8, 16Mx16 256Mb DDR Synchronous DRAM FEATURES: • Vdd =Vddq = 2.5V+0.2V -5, -6, -75 • Double data rate architecture; two data transfers per clock cycle. • Bidirectional , data strobe (DQS) is transmitted/

Memory

Abstract: FTS8L32512V
Contextual Info: FTS8L32512V 512Kx32 SRAM Module.3.3V FEATURES DESCRIPTION DSP Memory Solution The FTS8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions.

MC68366

Abstract: MCM68384 FUH -29A001B A1018 Microcomputer 8096 marking a5t M6800 MCM68365 MCM68365-25 MCM68A316E
Contextual Info: M O TO R O LA 64K BIT READ ONLY MEMORY MOS The MCM68365 is a mask-programmable byte-organized memory designed for use in bus-organized systems. It is fabricated with N-channel silicorvgate technology. For ease of use, the device operates from a single power supply, has compatibility w ith TTL, and needs no

5962-9470801MPA

Abstract: 907W SKN 1M 40 CLC428 CLC428A8B CLC428AJE CLC428AJP CLC428ALC DS428 21 SMD transformer
Contextual Info: Comlinear Dual Wideband, Low-Noise, Voltage-Feedback Op Amp C O R P O R A T I O N CLC428 APPLICATIONS: FEATURES: • • • • • • • • Wide unity-gain bandwidth: 160MHz • Ultra-low noise: 2.0nV/VHz • Low distortion: -78dBc 2nd 2MHz -62/-72dBc (10MHz)

BD157

Abstract: BD158
Contextual Info: BD157, B0158 BDI5 7 ,158 NPN PLASTIC POWER TRANSISTORS Low Power Fast Switching, Output Stages for TV Radio and Audio Output Amplifiers PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE DIM MIN. MAX. A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0 .7 0.9 E F 2 .2 5 TYP.

ACT-D16M96S

Abstract: BSA1 BS-B1
Contextual Info: Standard Products ACT-D16M96S High Speed 16MegaBit x 96 3.3V Synchronous DRAM Multichip Module May 29, 2007 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Six 6 low power 4M x 16 x 4 banks Synchronous Dynamic Random Access Memory chips in one MCM

HY514460

Contextual Info: •HYUNDAI HY514460 Series SEMICONDUCTOR 256 Kx164 R C MO S DRAM with 2 C A S & W P B PRELIMINARY DESCRIPTION The HY514460 is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access

Contextual Info: PRELIMINARY 5 VOLT FlashFile MEMORY 28F160S5 and 28F320S5 x8/x16 Two 32-Byte Write Buffers — 2 \is per Byte Effective Programming Time Operating Voltage 5 V Vcc — — 5 V V pp 70 ns Read Access Time (16 Mbit) 90 ns Read Access Time (32 Mbit) High-Density Symmetrically-Blocked

sm 0038 tsop

Abstract: E-8BS16
Contextual Info: MSC23S4641 E-8BS16 98.06.22 O K I Semiconductor M S C 2 3 S 4 6 4 1 E -8 B S 1 6 4,194,304 Word x 64 Bit SYNCHRONOUS DYNAMIC RAM MODULE (2BANK): DESCRIPTION The Oki MSC23S4641 E-8BS16 is a fully decoded, 4,194,304 x 64bit synchronous dynam ic random access memory com posed of sixteen 16Mb DRAMs(2Mx8) in TSOP

GPR323A16A

Contextual Info: GPR323A16A 16M x 16 bit Synchronous DRAM SDRAM Dec. 5, 2008 Version 1.0 GENERALPLUS TECHNOLOGY INC. reserves the right to change this documentation without prior notice. TECHNOLOGY INC. is believed to be accurate and reliable. Information provided by GENERALPLUS