DPAK 451 Search Results

BU108

Abstract: BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. • •

2Sd331 npn transistor

Abstract: 724 motorola NPN Transistor with collector heat pad BU108 2SA1046 MJ15003 300 watts amplifier MOTOROLA MJD122 application note ST T4 3580 724 motorola NPN Transistor with heat pad BDX54 BU326
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD122* PNP MJD127* Complementary Darlington Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS

DPAK 451

Abstract: MJD340
Contextual Info: MJD340 NPN MJD350 (PNP) Preferred Device High Voltage Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. SILICON POWER TRANSISTORS

BC 458

Abstract: 2SD128 BU108 ST T4 3580 2N55 TIP31 FOOTPRINT TIP32 FOOTPRINT BUX48 2SC111 2SC161
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD31,C* PNP MJD32,C* Complementary Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for general purpose amplifier and low speed switching applications. • • • • SILICON

TIP41 TRANSISTOR REPLACEMENT

Abstract: TIP42 338 npn dpak BU326 TIP42 amplifier BU108 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD41C* PNP MJD42C* Complementary Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for general purpose amplifier and low speed switching applications. • • • • • SILICON

MJ15003 300 watts amplifier

Abstract: ST T4 3580 MJD340 ST mje34 2sd478 D45H8 EQUIVALENT BUX98A SE9302 MJE2482 2SC1419
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN High Voltage Power Transistors MJD340* PNP MJD350* Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. *Motorola Preferred Device DPAK For Surface Mount Applications

Contextual Info: MTD2N40E Preferred Device Power MOSFET 2 Amps, 400 Volts N–Channel DPAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition this advanced high voltage

transistor 3569

Abstract: t4 3570 dpak BU 508 transistor BU108 BDW93C ST T4 3580 transistor t4 3570 BU326 BU100 MJ*15033
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD200 PNP MJD210 Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage —

2N40E

Abstract: 2N40* Central AN569 MTD2N40E MTD2N40ET4 SMD310
Contextual Info: MTD2N40E Preferred Device Power MOSFET 2 Amps, 400 Volts N–Channel DPAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition this advanced high voltage

2N40E

Abstract: t2n40e
Contextual Info: MTD2N40E Preferred Device Power MOSFET 2 Amps, 400 Volts N−Channel DPAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition this advanced high voltage

ST T4 3580

Abstract: BU108 bdw93c applications transistor bd136 in dpak packaging 2SC103 ir411 TRANSISTOR BC 384 BDX54 2SB56 IC 714
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJD243* Plastic Power Transistor DPAK For Surface Mount Applications *Motorola Preferred Device . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 100 Vdc (Min) @ IC = 10 mAdc

MJE3055 to247

Abstract: Motorola transistors MJE3055 TO 127 MJE3055 equivalent ST T4 3580 Motorola transistors MJE2955 BU108 transistor MJE3055 motorola MJE3055 TO 126 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD2955 PNP MJD3055 Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. • • • • • • Lead Formed for Surface Mount Applications in Plastic Sleeves No Suffix

Contextual Info: ST901T STD901T High voltage NPN Darlington transistor for ignition coil Features • High voltage special Darlington structure ■ Very rugged bipolar technology ■ High DC current gain TAB TAB 3 1 Application ■ DPAK 1 High ruggedness electronic ignition for small

mje15033 replacement

Abstract: BU108 2SC25 Replacements for BDW84 724 motorola NPN Transistor with heat pad BDX54 BD-375 BU326 BU100 2SC144
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD6036 PNP MJD6039 Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, convertors, and power amplifiers.

ic 4510

Abstract: ST901T STD901T 4510 901T HIGH VOLTAGE NPN DARLINGTON st901 automotive ignition ST TAB 060
Contextual Info: ST901T STD901T High voltage NPN Darlington transistor for ignition coil Features • High voltage special Darlington structure ■ Very rugged bipolar technology ■ High DC current gain TAB TAB 3 1 Application ■ DPAK 3 1 High ruggedness electronic ignition for small

equivalent transistor K 3562

Abstract: 724 motorola NPN Transistor with heat pad MJE340 MOTOROLA 2N3055 BU108 transistor bd136 in dpak packaging 2sc15 724 motorola NPN Transistor with collector heat pad 2SD436 BU326
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD112* PNP MJD117* Complementary Darlington Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers.

55L104

Abstract: NTD3055L104T4G NTD3055L104G 451 MOSFET
Contextual Info: NTD3055L104 Power MOSFET 12 Amps, 60 Volts, Logic Level N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • • • • • • Pb−Free Packages are Available

MTD2N40E

Abstract: AN569 SMD310
Contextual Info: MOTOROLA Order this document by MTD2N40E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET DPAK for Surface Mount Designer's MTD2N40E Motorola Preferred Device TMOS POWER FET 2.0 AMPERES 400 VOLTS RDS on = 3.5 OHM N–Channel Enhancement–Mode Silicon Gate

MFW 17 SOT23

Abstract: MFW SOT23 MFW 17 Transistor mfw 17 369A-13 AN569 MTD2N40E MFW diode MFW SOT mfw sot-23
Contextual Info: MOTOROLA SEMICONDUCTOR w TECHNICAL Order this document by MTD2N40WD DATA Designer5TM Data Sheet TMOS E-FET TM . . High Energy Power FET DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche and switch efficiently. This

AVALANCHE TRANSISTOR 2n

Abstract: fet dpak
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M T D 2N 40E TM O S E-FET™ High E nergy P o w er FET DPAK for S u rfa c e M ount M otorola Preferred Device TMOS POWER FET 2.0 AMPERES 400 VOLTS RDS on = 3.5 OHM N-Channel Enhancement-Mode Silicon Gate

Contextual Info: MOTOROLA Order this document by MTD2N40E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD2N40E T M O S E -F E T ™ High Energy Pow er FET DPAK for S u rfa ce Mount Motorola Preferred Device TM OS POWER FET 2.0 AMPERES 400 VOLTS N-Channel Enhancement-Mode Silicon Gate

4511 MOSFET

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M T D 5N 25E TMOS E-FET ™ Power Field Effect Transistor DPAK for Surface Mount M otorola Preferred D evk:* TM OS POWER FET 5.0 AMPERES 250 VOLTS N-Channel Enhancement-Mode Silicon Gate This adva n c ed T M O S E - F E T is designed to withstand high

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S heet MTD5P06V TMOS V ™ Power Field Effect Transistor DPAK for Surface Mount M otorola Preferred Device TM O S PO W ER FET P-Channel Enhancement-Mode Silicon Gate TM O S V is a n ew te ch n o lo g y d e sig n e d to a ch ie ve an o n -re s is ta n ce area prod u ct a bo u t o n e -h a lf th a t of sta n d a rd M O SFE Ts. This

5252 F 1108

Abstract: 4550J TO220FM 12015C 5252 F 1104 0345A msp18 E1113 K2613 SP1211
Contextual Info: B 2 S A series P 5 5 6 8 8 8 6 6 6 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 6 9 5 5 5 5 5 5 5 5 5 6 5 5 8 8 8 6 P*c*^aeoda TO-92 TO-92 TO-92 TO-126M TO-126M TO-126M TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92