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    TD2N40E Search Results

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    TD2N40E Price and Stock

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    Rochester Electronics LLC MTD2N40E

    N-CHANNEL POWER MOSFET
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    DigiKey MTD2N40E Bulk 753
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    Rochester Electronics LLC MTD2N40ET4

    N-CHANNEL POWER MOSFET
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    DigiKey MTD2N40ET4 Bulk 1,214
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    onsemi MTD2N40E

    Power Field-Effect Transistor, 2A I(D), 400V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    Rochester Electronics MTD2N40E 3,230 1
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    onsemi MTD2N40ET4

    Power Field-Effect Transistor, 2A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
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    Rochester Electronics MTD2N40ET4 137,500 1
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    ComSIT USA MTD2N40ET4 810
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    Motorola Mobility LLC MTD2N40E

    Power Field-Effect Transistor, 2A I(D), 400V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics MTD2N40E 55 1
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    • 100 $0.38
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    TD2N40E Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: MOTOROLA Order this document by TD2N40E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD2N40E T M O S E -F E T ™ High Energy Pow er FET DPAK for S u rfa ce Mount Motorola Preferred Device TM OS POWER FET 2.0 AMPERES 400 VOLTS N-Channel Enhancement-Mode Silicon Gate


    OCR Scan     		MTD2N40E/D TD2N40E PDF

    fet dpak

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview M TD2N40E TMOS E-FET High Energy Power FET DPAK for Surface Mount Motorola Preferred Device TMOS POWER FET 2.0 AMPERES 400 VOLTS RDS on = 3.5 OHM N-Channel Enhancement-Mode Silicon Gate This advan ced high voltage T M O S E -F E T is designed to


    OCR Scan     		PDF