DIODES IR Search Results

CMG03

Abstract: 1SS391 2fu smd transistor DF2S6.8S CMG07 TOSHIBA DIODE CATALOG DSR520CT toshiba SEMICONDUCTOR GENERAL CATALOG CMF05 CRS01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2009-8 SCE0004I Rectifiers General-Purpose Rectifiers Average Forward Current A

Variable Capacitance Diodes

Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
Contextual Info: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A

cmg07

Abstract: CRS15 5DL2CZ 10lc48 CMS19 CMZ24 CUS01 rf semiconductors CRH02 5DL2CZ transistor
Contextual Info: 2009-9 PRODUCT GUIDE Small and Medium Diodes SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng ▲ Diode Product Tree Rectifier Diodes General-Purpose Rectifiers High-Speed Rectifiers Super-Fast Recovery Diodes High-Efficiency Diodes Schottky Barrier Diodes

Contextual Info: SILICON PIN DIODES Microwave applications ULTRAFAST SWITCHING SILICON PIN DIODES Description For ultrafast switching, these passivated mesa diodes have a thin I layer < 10 µm . Electrical characteristics CHIP AND PACKAGED DIODES CHIP DIODES Characteristics Gold Breakdown Junction

Contextual Info: SILICON SCHOTTKY DIODES Silicon Schottky barrier detector diodes are available as • packaged diodes • beam lead diodes They are optimized for wideband applications, In the frequency range from 1 to 18 GHz. Packaged diodes CHARACTERISTICS at25°C FREQUENCY

RB080L-30

Abstract: Rohm Schottky Barrier Diodes
Contextual Info: RB080L-30 | Schottky Barrier Diodes | Discrete Semiconductors | ROHM CO., LTD. 1 Schottky Barrier Diodes RB080L-30 [ Product description ] Outline ROHM's schottky barrier diodes are low VF, low IR and high ESD resistant, suitable for PC,mobile phone and various portable electronics.

UC-255

Abstract: transistor marking lv3 WSD420
Contextual Info: WEITRON WSD420 Surface Mount Schottky Barrier Diodes SMALL SIGNAL SCHOTTKY DIODES 100m AMPERES 40 VOLTS Features: *Low Power Rectification *Small Surface Mounting Type *Low I R IR =50nA Typ *High Reliability 3 Description: These schottky barrier diodes are designed for high speed

018pF

Contextual Info: POWER GENERATION DIODES Step recovery diodes SRD STEP RECOVERY DIODES (S.R.D.) Description These diodes use mesa technology and oxide passivation. They support fast switching and multiplier applications: • very short pulse generation, • ultra fast waveform shaping,

e44l

Abstract: QW-R601-046 E44 SOT23
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BAT54S DIODE SCHOTTKY BARRIER DUAL DIODES DESCRIPTION „ Planar Schottky barrier diodes are encapsulated in the SOT-23 small plastic SMD package. Single diodes and dual diodes with different pin configuration are available.

smd e42

Abstract: smd diode marking ja
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BAT54ATB DIODE SCHOTTKY BARRIER DUAL DIODES „ DESCRIPTION Planar Schottky barrier diodes are encapsulated in the SOT-523 small plastic SMD package. Single diodes and dual diodes with different pin configuration are available.

FYPF2004DN

Abstract: FFPF30U60DN fairchild korea ffpf30u20s FFPF04F150S 81663-9 FYPF2006DN FFPF14X150S *F30U60DN
Contextual Info: Fast Recovery/Schottky Diodes Product Line Card Fast Recovery Diodes FRDs Schottky Barrier Diodes (SBDs) Fairchild's broad portfolio of Fast Recovery Diodes has been specifically designed to address Ultra Fast Soft Recovery, high-speed and high-voltage design

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BAT54WS DIODE SCHOTTKY BARRIER DIODES „ DESCRIPTION Planar Schottky barrier diodes are encapsulated in the SOD-323 small plastic SMD package. Single diodes and dual diodes with different pin configuration are available. „ FEATURES

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BAT54TB DIODE SCHOTTKY BARRIER DIODES „ DESCRIPTION Planar Schottky barrier diodes are encapsulated in the SOT-523 small plastic SMD package. Single diodes and dual diodes with different pin configuration are available. „ FEATURES

SMD diode NC

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BAT54W DIODE SCHOTTKY BARRIER DIODES „ DESCRIPTION Planar Schottky barrier diodes are encapsulated in the SOT-323 small plastic SMD package. Single diodes and dual diodes with different pin configuration are available. „ FEATURES

dh80102

Contextual Info: SILICON PIN DIODES Square ceramic surface mountable PIN diodes SQUARE CERAMIC SURFACE MOUNTABLE PIN DIODES Description These PIN diodes are manufactured in a square package SMD for surface mount applications. These packages utilize ceramic package technology with low inductance and axial terminations.

B5817WS

Abstract: B5819WS SJ12
Contextual Info: B5817WS/B5819WS Surface Mount Schottky Barrier Diodes Features: SMALL SIGNAL SCHOTTKY DIODES 1.0 AMPERES 20-40 VOLTS *Low Forward Voltage *Very Small Conduction Losses *Schottky Barrier Diodes Encapsulated in a SOD-323 Package Description: These schottky barrier diodes are designed for high speed

Contextual Info: 4613303 HUGHES, 95D MICROWAVE PRDTS 00486 D T -* 7 -// SECTION MILLIMETER-WAVE DIODES IMPATT Diodes and Test Fixtures TS DE | 4L13303 □□□04flb 4 3 Hughes 4710xH series IMPATT diodes are silicon double '• - drift diodes mounted in hermetically sealed packages and :

3q marking diode

Abstract: BAT54C BAT54A 33T4 BAT54S BAT54S dc BAT-54A
Contextual Info: 23A33T4 00G0722 n s BAT54A; C; S SCHOTTKY BARRIER DIODES BAT54A dual diodes, common anode BAT54C dual diodes, common cathode and BAT54S dual diodes, in series M arking PACKAGE O UTLIN E D ETAILS ALL D IM EN SION S IN mm BAT54A - 42 BAT54C - 43 BAT54S - 44

TR8025

Abstract: RB751V-40 TE-17 1SR35-400A T-82 1SR159-200TE25 1SS376 te-17 ROHM udz te-17 RB063L-30TE25 1SS133 T-77 RB751S-40TE61 RB441Q-40
Contextual Info: Table of characteristics Diodes Table of characteristics Small signal diodes !Switching diodes ROHM has an overwhelming production capability of high reliable switching diodes in the industry. The superior antisurge characteristics of the UMD2 package in spite of the small size is noteworthy. A wide variety of diode arrays

DH514

Abstract: 175C-24 A22E
Contextual Info: SILICON SCHOTTKY DIODES These passivated Schottky barrier diodes are suitable for low pow er ultra-fast switching applications. Packaged diodes CHARACTERISTICS MINORITY CARRIER at25°C LIFETIME BREAKDOWN VOLTAGE REVERSE TOTAL FORWARD CONTINUOUS CURRENT CAPACITANCE

PD 2028 b

Contextual Info: SELECTION GUIDE PA RI NO. SYSTEM INFRARED EM ITTI MG DIODES : PHOTODIODES : LAMP CATEGORYBRIGHT LED PRODUCT •PHOTOTRANSISTORS • PHOTOREFLECTORS : LIGHT BED-DDDDDï PACKAGE TYPE LAMP CATEGORY: IR: Infrared Emitting Diodes PT: Phototransistors PD: Photodiodes

Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . Diodes Diodes - Line Transient Voltage Protection in Portable Electronics ESD Protection Diodes SMFxxA Series ESD Protection Diodes Provide High Surge Capability of 200 W in Low-Profile SMF Package KEY BENEFITS

Contextual Info: MCL4148/MCL4448 High-Speed Switching Diodes SMALL SIGNAL SWITCHING DIODES 150 m AMPERES 75 VOLTS Features: *Silicon Epitaxial Planner Diode *Fast Switching Diodes *500 mW Power Dissipation Mechanical Data: *Case : MicroMELF Glass Case *Weight : Approx 0.0123 gram

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BAS70xW DIODE SCHOTTKY BARRIER DIODES  DESCRIPTION Planar Schottky barrier diodes encapsulated in the SOT-323 small plastic SMD package. Single diode and dual diodes with different pin configuration are available.  FEATURES