1SS413 Search Results

Contextual Info: 1SS413CT Schottky Barrier Diode Silicon Epitaxial 1SS413CT 1. Applications • High-Speed Switching 2. Features 1 Low forward voltage : VF(3) = 0.50 V (typ.) (2) Low reverse current : IR = 0.5 µA (max) (3) Small total capacitance : Ct = 3.9 pF (typ.) 3. Packaging and Internal Circuit

1SS413

Abstract: 11-L1 1-1L1A
Contextual Info: 1SS413 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS413 Unit: mm High Speed Switching Application 0.6±0.05 : IR= 0.5 A max : CT = 3.9pF (typ.) 0.07 M A Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 25 V Reverse voltage

Contextual Info: 1SS413 Schottky Barrier Diode Silicon Epitaxial 1SS413 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode fSC SOD-923 1: Cathode 2: Anode fSC Start of commercial production 1 2002-11 2014-04-03 Rev.2.0 1SS413 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )

DIODE Sp marking code

Abstract: marking code sp 1ss413 marking code 2 SOD523
Contextual Info: 1SS413 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE For high speed switching application PINNING PIN DESCRIPTION 1 Cathode 2 Anode 2 1 SP Top View Marking Code: "SP" Simplified outline SOD-523 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value

DIODE Sp marking code

Abstract: 1SS413 marking code sp
Contextual Info: 1SS413 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE High Speed Switching Application PINNING Features • Low forward voltage : VF 3 =0.50V(typ.). • Low reverse current : IR=0.5µA (max.). • Small total capacitance : CT=3.9pF (typ.). DESCRIPTION PIN 1 Cathode

Contextual Info: 1SS413 Schottky Barrier Diode Silicon Epitaxial 1SS413 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode SOD-923 1: Cathode 2: Anode fSC Start of commercial production 1 2002-11 2014-07-09 Rev.3.0 1SS413 3. Absolute Maximum Ratings Note (Unless otherwise specified, Ta = 25 )

1ss413

Abstract: SOD-523 marking Q
Contextual Info: 1SS413 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE for high speed switching application PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 Q Top View Marking Code: "Q" Simplified outline SOD-523 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value

1SS413

Abstract: 030619EAA
Contextual Info: 1SS413 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS413 Unit: mm High Speed Switching Application 0.6±0.05 : IR= 0.5µA max : CT = 3.9pF (typ.) 0.07 M A Maximum Ratings (Ta = 25°C) Characteristic Maximum (peak) reverse Voltage Symbol Rating

Contextual Info: 1SS413 Schottky Barrier Diode Silicon Epitaxial 1SS413 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode fSC SOD-923 1: Cathode 2: Anode fSC 1 2014-02-05 Rev.1.0 1SS413 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )

1SS413

Abstract: P1001
Contextual Info: 1SS413 東芝ダイオード エピタキシャルショットキバリア形 1SS413 ○ 高速スイッチング用 : VF 3 = 0.50 V (標準) • 逆電流が小さい。 : IR = 0.5 A (最大) • 端子間容量が小さい。 : CT = 3.9 pF (標準) 0.6±0.05

1SS413

Contextual Info: 1SS413 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS413 Unit: mm High Speed Switching Application 0.6±0.05 : IR= 0.5 A max : CT = 3.9pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic 0.07 M A 1.0±0.05 Low reverse current Small total capacitance

SCJ0004N

Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

Variable Capacitance Diodes

Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
Contextual Info: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

DF2S3.6SC

Abstract: TC7SZ34FU FSV 052 TC7SZ34F TC7SZ17FU 1SS421 TC7SZ02F TC7SZ08FU 1SS417 TC7SZ00AFS
Contextual Info: 【正誤表】 下記内容に誤記載がありましたので正誤表を添付させていただきます。 •資料名: 汎用小信号面実装対応素子 （トランジスタ、 ダイオード、 セルパック） ■資料番号： BCJ0052E

LT 543 common cathode

Abstract: CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2010/9 SCE0004K Rectifiers General-Purpose Rectifiers Average Forward Current

TPCA*8030

Abstract: lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558
Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ 汎用小信号面実装対応素子 （トランジスタダイオード、セルパック） SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S

CMZB220

Abstract: CMS17 CES520 CRS20I40A CRS10I30C CUS10I40 CRS30I30A CMZ24 CRS06 CRS10I30B
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 ダイオード 整流用ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツェナーダイオード スイッチングダイオード ショットキバリアダイオード

CMG03

Abstract: 1SS391 2fu smd transistor DF2S6.8S CMG07 TOSHIBA DIODE CATALOG DSR520CT toshiba SEMICONDUCTOR GENERAL CATALOG CMF05 CRS01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2009-8 SCE0004I Rectifiers General-Purpose Rectifiers Average Forward Current A

2fu smd transistor

Abstract: 2FK transistor 3FV 60 43 smd diode Lz zener HN2S02JE CMZ24 CRS01 DF2S6.2S 1SV101 1SV283B
Contextual Info: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 256 Zener Diodes z 257 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A

DF2S3.6SC

Abstract: CRH02 CRG09 CMG07 1SS416CT CRG07 CMS19 CMZ24 HN2D01JE JDV2S10FS
Contextual Info: 東芝半導体製品総覧表 2010 年 1 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード

smd diode Lz zener

Abstract: CRS20I30B JDV2S41 CRS15I30B CUS10I40A TOSHIBA DIODE CATALOG toshiba SEMICONDUCTOR GENERAL CATALOG CMS30I40A CMS10I40A CRS20I40B
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2011/9 SCE0004L Rectifiers General-Purpose Rectifiers Average Forward Current A

mg75n2ys40

Abstract: 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
Contextual Info: 小信号ダイオード SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入