1SS417 Search Results

Contextual Info: 1SS417CT TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS417CT High Speed Switching Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 200

Contextual Info: 1SS417 Schottky Barrier Diode Silicon Epitaxial 1SS417 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode fSC SOD-923 1: Cathode 2: Anode fSC 1 2014-02-13 Rev.1.0 1SS417 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )

1SS417CT

Contextual Info: 1SS417CT TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS417CT High Speed Switching Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 200

Contextual Info: 1SS417TM HIGH SPEED SWITCHING APPLICATION SOD-923 FEATURES Unit：inch mm • Small package 0.010(0.25) • Low reverse current : I R=5µA (Max.) • 0.034(0.85) 0.029(0.75) 0.026(0.65) 0.021(0.55) MECHANICAL DATA 0.005(0.15) • Low forward voltage : V F(3)=0.56V(typ.)

Contextual Info: 1SS417TM HIGH SPEED SWITCHING APPLICATION SOD-923 FEATURES Unit：inch mm • Small package 0.010(0.25) • Low reverse current : I R=5µA (Max.) 0.034(0.85) 0.029(0.75) • In compliance with EU RoHS 2002/95/EC directives 0.026(0.65) 0.021(0.55) MECHANICAL DATA

1SS417

Contextual Info: 1SS417 東芝ダイオード シリコンエピタキシャルショットキバリア形 1SS417 ○ 超高速スイッチング用 単位: mm 0.6±0.05 定格 単位 0.07 せ ん 頭 逆 逆 電 電 圧 VRM 45 V 圧 VR 40 V せ ん 頭 順 電 流 IFM 200

1SS417CT

Abstract: ctct 10-N-0
Contextual Info: 1SS417CT 東芝ダイオード シリコンエピタキシャルショットキバリア形 1SS417CT ○ 超高速スイッチング用 単位: mm 絶対最大定格 Ta = 25°C 項目 せ ん 頭 逆 逆 電 電 記号 定格 単位 圧 VRM 45 V 圧 VR 40

Contextual Info: 1SS417TM HIGH SPEED SWITCHING APPLICATION SO D -92 3 FEATURES • Small package • Low forward voltage : V F 3 =0.56V(typ.) • Low reverse current : I R=5µA (Max.) 0.034(0.85) 0.029(0.75) 0.010(0.25) MECHANICAL DATA • Case : SOD-923, Plastic 0.005(0.15)

Contextual Info: 1SS417TM HIGH SPEED SWITCHING APPLICATION SO D -92 3 FEATURES • Small package • Low forward voltage : VF 3 =0.56V(typ.) • Low reverse current : I R=5µA (Max.) 0.034(0.85) 0.029(0.75) 0.010(0.25) MECHANICAL DATA • Case : SOD-923, Plastic 0.005(0.15)

Contextual Info: 1SS417 Schottky Barrier Diode Silicon Epitaxial 1SS417 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode fSC SOD-923 1: Cathode 2: Anode fSC Start of commercial production 1 2003-06 2014-04-14 Rev.2.0 1SS417 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )

junction to case package sod923

Contextual Info: 1SS417TM HIGH SPEED SWITCHING APPLICATION SOD-923 FEATURES Unit：inch mm • Small package 0.010(0.25) • Low reverse current : I R=5µA (Max.) 0.034(0.85) 0.029(0.75) • /  0.005(0.15) • Low forward voltage : V F(3)=0.56V(typ.)

Contextual Info: 1SS417 Schottky Barrier Diode Silicon Epitaxial 1SS417 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode SOD-923 1: Cathode 2: Anode fSC Start of commercial production 1 2003-06 2014-07-08 Rev.3.0 1SS417 3. Absolute Maximum Ratings Note (Unless otherwise specified, Ta = 25 )

1SS417

Contextual Info: 1SS417 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS417 High Speed Switching Application Unit: mm 0.6±0.05 Low reverse current: IR = 5µA Max. Maximum Ratings (Ta = 25°C) Characteristic Maximum (peak) reverse voltage Symbol Rating Unit VRM

1SS417

Contextual Info: 1SS417 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS417 High Speed Switching Application Unit: mm 0.6±0.05 Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum peak forward current IFM 200 mA Average forward current IO

Contextual Info: 1SS417TS 東芝ダイオード シリコンエピタキシャルショットキバリア形 1SS417TS ○ 超高速スイッチング用 単位: mm z 2 端子小型外囲器なので高密度実装に最適です。 z 順方向特性が良い。 : VF 3 = 0.56V (標準)

Contextual Info: 1SS417TS TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS417TS High Speed Switching Application • Unit: mm Small package Low forward voltage: VF 3 = 0.56V (typ.) Low reverse current: IR = 5 A (Max.) 0.6±0.05 A Symbol Rating Unit VRM 45 V Reverse voltage

SCJ0004N

Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード

TAH6N201U

Abstract: TAH8N401K 1SS361CT 1SS387CT 1SS417CT TPD4113K MT3S106
Contextual Info: C O N T E N T S 東芝半導体情報誌アイ 2005年2月号 2 今月の新製品情報 VOLUME 151 1チップインバータIC .2 2ビット 2電源片方向レベルシフタIC .2 Lead Frame Chip Scale Package.3

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

Variable Capacitance Diodes

Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
Contextual Info: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

DF2S3.6SC

Abstract: TC7SZ34FU FSV 052 TC7SZ34F TC7SZ17FU 1SS421 TC7SZ02F TC7SZ08FU 1SS417 TC7SZ00AFS
Contextual Info: 【正誤表】 下記内容に誤記載がありましたので正誤表を添付させていただきます。 •資料名: 汎用小信号面実装対応素子 （トランジスタ、 ダイオード、 セルパック） ■資料番号： BCJ0052E