10-N-0 Search Results
10-N-0 Datasheets (10)
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| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| 10N08 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 33.22KB | 1 | ||
HSK10N06
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Huashuo Semiconductor | HSK10N06 is a 60V N-channel MOSFET with 10A continuous drain current, 40mΩ maximum RDS(ON), low gate charge, and fast switching for synchronous buck converters. | Original | ||||
JMTP110N06D
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Jiangsu JieJie Microelectronics Co Ltd | Dual N-channel enhancement mode power MOSFET in SOP-8 package, 60V drain-source voltage, 11A continuous drain current, RDS(on) less than 14mΩ at VGS=10V, featuring advanced trench technology for low gate charge and high efficiency. | Original | ||||
SLA10N03T
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Maplesemi | N-Channel 30V 10A MOSFET with RDS(on) of 11.3 mΩ at VGS = 10 V, advanced TRENCH technology, low Crss, fast switching, 100% avalanche tested, and improved dv/dt capability. | Original | ||||
JMTP110N06A
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Jiangsu JieJie Microelectronics Co Ltd | N-channel Enhancement Mode Power MOSFET JMTP110N06A with 60V drain-source voltage, 12A continuous drain current, RDS(on) less than 12mΩ at VGS=10V, and low gate charge, suitable for load switch, PWM, and power management applications. | Original | ||||
CJAC110N03
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JCET Group | CJAC110N03 N-Channel Power MOSFET with 30V drain-source voltage, 110A continuous drain current, and ultra-low RDS(on) of 1.8mΩ at 10V VGS, designed for high-density switching applications in a PDFN 5×6-8L package. | Original | ||||
HSL10N06
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Huashuo Semiconductor | N-Ch 60V Fast Switching MOSFET with 10 A continuous drain current, 36 mΩ max RDS(ON), low gate charge, and 31 W power dissipation in SOT-223 package. | Original | ||||
SL10N06A
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SLKOR | Original | |||||
CJAC110N03A
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JCET Group | N-Channel Power MOSFET CJAC110N03A with 30V VDS, 110A continuous drain current, 1.8mΩ typical RDS(on) at 10V VGS, trench technology for low gate charge, and high power density in a PDFN5x6-8L package. | Original | ||||
JMTK110N06A
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Jiangsu JieJie Microelectronics Co Ltd | 60V, 55A, 8mΩ N-channel Power Trench MOSFET in TO-252-3L package with low gate charge, 100% UIS tested, suitable for load switch, PWM, and power management applications. | Original |
10-N-0 Price and Stock
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Diotec Semiconductor AG DI010N03PWMOSFET POWERQFN 2X2 N 30V 10A 0. |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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DI010N03PW | Cut Tape | 3,850 | 1 |
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Buy Now | |||||
Goford Semiconductor GT110N06SN60V,RD(MAX)<15M@-4.5V,RD(MAX)<1 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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GT110N06S | Cut Tape | 3,533 | 1 |
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Buy Now | |||||
Renesas Electronics Corporation NP110N04PUK-E1-AYMOSFET N-CH 40V 110A TO263-3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NP110N04PUK-E1-AY | Cut Tape | 1,509 | 1 |
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Buy Now | |||||
Infineon Technologies AG IPF010N06NF2SATMA1TRENCH 40<-<100V |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPF010N06NF2SATMA1 | Digi-Reel | 370 | 1 |
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Buy Now | |||||
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IPF010N06NF2SATMA1 | Tape & Reel | 18 Weeks | 800 |
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Buy Now | |||||
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IPF010N06NF2SATMA1 | 228 |
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Buy Now | |||||||
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IPF010N06NF2SATMA1 | Cut Tape | 970 | 1 |
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Buy Now | |||||
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IPF010N06NF2SATMA1 | Cut Tape | 300 | 0 Weeks, 1 Days | 1 |
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IPF010N06NF2SATMA1 | 800 | 16 Weeks | 800 |
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EPC Space LLC FBG10N05ACGAN FET HEMT 100V5A COTS 4FSMD-A |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FBG10N05AC | Bulk | 131 | 1 |
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Buy Now | |||||
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FBG10N05AC | Waffle Pack | 99 | 5 Weeks | 1 |
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Buy Now | ||||