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10N08
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Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
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HSK10N06
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Huashuo Semiconductor
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HSK10N06 is a 60V N-channel MOSFET with 10A continuous drain current, 40mΩ maximum RDS(ON), low gate charge, and fast switching for synchronous buck converters. |
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JMTP110N06D
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Jiangsu JieJie Microelectronics Co Ltd
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Dual N-channel enhancement mode power MOSFET in SOP-8 package, 60V drain-source voltage, 11A continuous drain current, RDS(on) less than 14mΩ at VGS=10V, featuring advanced trench technology for low gate charge and high efficiency. |
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SLA10N03T
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Maplesemi
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N-Channel 30V 10A MOSFET with RDS(on) of 11.3 mΩ at VGS = 10 V, advanced TRENCH technology, low Crss, fast switching, 100% avalanche tested, and improved dv/dt capability. |
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JMTP110N06A
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Jiangsu JieJie Microelectronics Co Ltd
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N-channel Enhancement Mode Power MOSFET JMTP110N06A with 60V drain-source voltage, 12A continuous drain current, RDS(on) less than 12mΩ at VGS=10V, and low gate charge, suitable for load switch, PWM, and power management applications. |
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HSL10N06
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Huashuo Semiconductor
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N-Ch 60V Fast Switching MOSFET with 10 A continuous drain current, 36 mΩ max RDS(ON), low gate charge, and 31 W power dissipation in SOT-223 package. |
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SL10N06A
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SLKOR
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CJAC110N03
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JCET Group
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CJAC110N03 N-Channel Power MOSFET with 30V drain-source voltage, 110A continuous drain current, and ultra-low RDS(on) of 1.8mΩ at 10V VGS, designed for high-density switching applications in a PDFN 5×6-8L package. |
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CJAC110N03A
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JCET Group
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N-Channel Power MOSFET CJAC110N03A with 30V VDS, 110A continuous drain current, 1.8mΩ typical RDS(on) at 10V VGS, trench technology for low gate charge, and high power density in a PDFN5x6-8L package. |
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JMTK110N06A
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Jiangsu JieJie Microelectronics Co Ltd
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60V, 55A, 8mΩ N-channel Power Trench MOSFET in TO-252-3L package with low gate charge, 100% UIS tested, suitable for load switch, PWM, and power management applications. |
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HSK10N06
