DIODES 1N 4148 Search Results

diode t 4148

Abstract: t 4148 diode din 4148 diode din 4148 IN4448 T 4148 diode IN 4148 din 4448 diode IN4448 4148 t
Contextual Info: «m » 'W 1N 4148 O • 1N 4149 -1N 4446 0 1N 4447 • 1N 4448 O • 1N 4449 Silizium-Epitaxial-Planar-Dioden Silicon epitaxial planar diodes Anwendungen: Extrem schnelle Schalter Applications: Extrem fast switches Die elektrischen Daten entsprechen den Dioden:

1N4148

Abstract: 4148
Contextual Info: 1N 4148, 1N 4150, 1N 4151, 1N 4448 Silicon Planar Diodes Silizium-Planar-Dioden Nominal current Nennstrom 150.300 mA Repetitive peak reverse voltage Periodische Spitzensperrspannung 50…100 V Glass case Glasgehäuse DO-35 SOD-27 Weight approx. Gewicht ca.

Contextual Info: 1N 4148, 1N 4150, 1N 4151, 1N 4448 Silicon Planar Diodes Silizium-Planar-Dioden 150.300 mA Ø 1.9 Repetitive peak reverse voltage Periodische Spitzensperrspannung 3.9 62.5 Nominal current Nennstrom Glass case Glasgehäuse 50…100 V DO-35 SOD-27 Weight approx.

1N4140

Abstract: 1N4305 diode in 4148 diode 1N4151
Contextual Info: I n t e r n a t io n a l S e m ic o n d u c to r , I n c . 1N 4148 1N 4446 thru thru 1N 4154 1N 4454 1N 4305 GENERAL PURPOSE PLANAR DIODES DIFFUSED SILICON PLANAR ELECTRICAL CHARACTERISTICS À at 25°C unless otherwise specified Maximum Maximum »laximum IS I

1N914 CJ 4148

Contextual Info: 1N914 THRU RECTIFIER SPECIALISTS 1N 4148 1N 4454 TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES VOLTAGE RANGE -50 to 100 Volts CURRENT - 0.075 to 0.2 Ampere FEATURES * * * * * Silicon epitaxial planar diodes Low power loss, high efficiency Low leakage

diode t 4148

Abstract: 4148 T 4148 diode 4148 diode IN 4148 1N4148 IN 4148 diode t 4148 diode 4148 diode 4151
Contextual Info: Diotec 1N 4148, 1N 4150, 1N 4151, 1N 4448, Small Signal Si-Diodes Si-Allzweck-Dioden Nominal current Nennstrom Ø 1.9 150 mA Repetitive peak reverse voltage Periodische Spitzensperrspannung 50…100 V max Glass case Glasgehäuse DO-35 SOD-27 Ø 0.56 max Dimensions / Maße in mm

1N4150

Abstract: 1N914 CJ 4148 CJ 4148 1N914/1N4148 YC 746 1N4151 1n914a-1 1N4148 1N4154 1N4448
Contextual Info: 1N914 DC COMPONENTS CO., LTD. R THRU RECTIFIER SPECIALISTS 1N 4148 1N 4454 TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES VOLTAGE RANGE -50 to 100 Volts CURRENT - 0.075 to 0.2 Ampere FEATURES * * * * * Silicon epitaxial planar diodes Low power loss, high efficiency

MTZJ 188

Abstract: 1ss376
Contextual Info: Product List Diodes Product List 1N 4004A . 135 DAN235E . 71 1N4148 . 56

in4447

Abstract: IN4446 in4449 DIODe IN4446 1n914 equivalent IN4I48 in4448 IN4305 1N4148 1N4149
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Part N u m b e r BV @ 100/1A M in . V I r @ 2 5 ° C M ax. (ri A ) @ V r (V ) V f (V ) M ax. @ I f (m A ) Co @ DV (pf) 1N 914 100 25 30 1.00 10 4 1N 914A 100 25 20 1.00 20 4 1N 914B 100 25 20 1.00 100 1N 916 100 25 20

DIODe IN4446

Abstract: in4447 in4449 IN4I48 1n914 equivalent in4448 JANTX 1N916 1n916 equivalent IN4446 1N916 JANTX
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Part N u m b e r BV @ 100/1A M in . V I r @ 2 5 ° C M ax. (ri A ) @ V r (V ) V f (V ) M ax. @ I f (m A ) Co @ DV (pf) 1N 914 100 25 30 1.00 10 4 1N 914A 100 25 20 1.00 20 4 1N 914B 100 25 20 1.00 100 1N 916 100 25 20

Diodes 1n 4148

Contextual Info: VfSMAY _ 1N4148.1N4448 ▼ Vishay Telefunken Silicon Epitaxial Planar Diodes Features • Electrically equivalent diodes: 1N 4148 - 1 N 914 1N4448 - 1 N914B Applications 94 9367 Extrem e fa st sw itches Absolute Maximum Ratings Tj = 2 5 °C

In5062

Abstract: in 5062 1N4007W 1N4007 toshiba diode 1n4007 toshiba SCR 1 c106d 1N4004 toshiba 1N5059 diode scr 2n6396 1N4007 rectifier diode
Contextual Info: 9097250 TOSHIBA CDI S C R E T E /O P T O TOSHIBA -CDISCRETE/OPTOJ 9 0D 16494 DE § /3 □OlkMTM 7 Diodes Switching Diode DO-35) VB(V) lo(MA) 2 5 (3 0 ) 50 1N4152 1N4150 1N 4151 1N 4153 \ 150 200 70 1N4150 1N 4606 50 70 75 1 N 914, A , B 1 N 916, A , B 1 N 4149

diode t 4148

Abstract: diode f 4148 T 4148 t 4148 diode diode 4448 4148 t 4448 4148 Diode 4148 MINIMELF 4148 diode
Contextual Info: E G CORP 17E D 005^42^ QD0Tflb7 3 • LL 4148 •LL 4448 TllLIlIFBÎIîSKlKl electronic Creative Tecfinolog es T~ 01-01 Silicon Epitaxial Planar Diodes A p p lications: Extreme fast switches Features: • Electrical data identical with the devices 1N 4 1 4 8 respectively 1N 4 4 4 8

1n4148 D035

Abstract: DHD806 DHD800 1N916 JANTX JANTX 1N916 1N4532 DE104 DZ805 IN4305 1N4148
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Part Number 1N914 1N 914A 1N 914B BV @ 100/1A Min. V I r @ 2 5 °C Max. (ri A) @ V r (V) V f Max. (V ) @ I f (m A ) Co @ DV (pf) trr (77S E C ) Package Outline Package Outline Number 100 100 25 30 1.00 10 4 25 20 1.00

41481

Contextual Info: JA N 1N 4148-1 Microsemi Corp. óioCe exoerts ' SC O TTSD A LE, A Z SANTA A N A , CA For more information call: 602 941-6300 FEATURES • MICROMINIATURE PACKAGE MILITARY SWITCHING DIODES • TRIPLE LAYER PASSIVATION • HERMETICALLY SEALED GLASS PACKAGE

1n914 equivalent

Abstract: 1N3067 1N5318 1N4009 equivalent 1N5319 1N814 FD6666 1n903 1n904 1N4950
Contextual Info: DIODES COMPUTER DIODES BY ASCENDING t R R GLASS PACKAGE Continued *RR Bv ns VOLTS MAX 1N4150 C Package pF Equivalent nA •r @ Vr VOLTS @ If M IN MAX @ VOLTS MAX @ mA MAX Package D O -7/D O -35 4.0 75 100 @ 50 1.0 @ 200 2.5 DO-35 1N 3600 1N4305 4.0 75 100

1N SERIES DIODE

Abstract: 2001fx
Contextual Info: Diodes I High-Speed Switching Diode 1 1N4148/1N4150/1N4448/1N914B ►External dimensions Units: mm •J E D E C Standard Product At ROHM, we manufacture the following 1N series, as a JEDEC standard product, to assure that we meet the needs of our overseas customers as well.

1N4448R

Contextual Info: 1N4148 1N914 1N 916 1N4150 1N4153 1N4448 1N4606 These diodes are in a glass sealed envelope and are suitable for lead mounting on printed circuit boards. Features • Dimensions Units : mm CATHODE BAND ¿0.5±0.1 V available in DO-35 package c • part marking, see following table

Contextual Info: JA N 1N 4148-1 ☆ JA T Ñ K ? Microísemi Corp. $ The û'Ode e xp ert? SANTA A N A , CA SCOTTSDALE, A 2 F o r m o re in fo rm a tio n call: 714 979-8220 MILITARY SWITCHING DIODES FEA TU RES • MICROMINIATURE PACKAGE • TRIPLE LAYER PASSIVATION • METALLURGICALLY BONDED

5011N

Abstract: IC la 4148 1N44 wm9 05
Contextual Info: TY P ES IN 4148 WM9 1N4446 THRU 1N4449 SILICON SWITCHING DIODES B U L L E T IN N O . D L S 7 3 9 2 6 9 , O C T O B E R 1 9 6 6 - R E V IS E D M A R C H 197 3 FA ST SWITCHING DIODES Rugged Double-Plug Construction • Electrical Equivalents: 1N4148 . . . 1N914 . . . 1N4531

T 4148

Abstract: n4148 N 4148 Diode N4148 diode 4149 1N4148 1n 4148 diode 4446 T03B 95288
Contextual Info: A E G CORP 17E D TTSUHFIUMìSIIIiO electronic CtealcveTechna'ogies o a a m a t a o c n a a i 5 • 1 N 4148 - 1 N 4 1 4 9 - 1 N 4446 1 |M 4447 • 1 N 4 44 8 -1 N 4449 Silicon Epitaxial Planar Diodes A pplication s: Extreme fast switches Features: • •

D4148

Abstract: OA91 OA91 DIODES oa47 diode in4007 IN 4004 diodes OA47 OA79 IN 4007 OA90 diode
Contextual Info: Diodes and Rectifiers M in ia tu re D iod es in glass package M ax im u m ratings Case D 03 D3 O A 91 O A 90 O A 47 O A 79 IN 4148 D 59 D542 D 4148 C o n s tru c tio n y RM V Pt. C o n ta c t Ge Pt. C o n ta c t Ge G o ld B onded Ge Pt. C o n ta ct Ge Si_ D iffused_

4148 diod

Abstract: telefunken diodes 914 Diode N4148 diode din 4148 on l 4148 details t 4148 diode IN4149 1N4446 telefunken N4149 diod 4148
Contextual Info: 17E » TELEFUNKEN ELECTRONIC ô^ocnb o o o 'j f l ô 'î •= • AL 66 1 N4148 I N 4149 1 N 4446 1 N 4447 1 N 4448 1 N 4449 TnHLKFMIMlIK] electronic Creative Technologies - T '0 3 - 0 ? Silicon Epitaxial Planar Diodes A p p lications: Extreme fast switches

4446

Abstract: diode 4148
Contextual Info: A C T IV E C O M P O N EN TS F O R H Y B R ID C IR C U IT S C O M PO SAN TS A C T IF S P O U R C IR C U IT S H Y B R ID E S Silicon signal diodes, general purpose chips Diodes de signa! au silicium, usage généra! (pastilles) Type Type VR (V) 'f (mA) 'fm