MMX50 Search Results

BAS81

Abstract: BAS82 BAS83 BAS81-GS08
Contextual Info: BAS81.BAS83 Vishay Telefunken Small Signal Schottky Barrier Diodes Features D Integrated protection ring against static discharge D D D D Low capacitance Low leakage current Low forward voltage drop Very low switching time Applications 94 9371 HF–Detector

Contextual Info: ZMM55C Series Surface Mount Zener Diodes * “G” Lead Pb -Free SMALL SIGNAL ZENER DIODES 0.5 WATTS Features: *500mw Power Dissipation *Genelral Purpose , Medium Current *Ideal for Surface Mountted Application Mechanical Data: *Case : MINI-MELF Glass Case (SOD-80)

Contextual Info: BA682.BA683 Vishay Telefunken Band Switching Diodes Features D D D D Silicon Planar Diodes Low differential forward resistance Low diode capacitance High reverse impedance Applications 94 9371 Band switching in VHF–tuners Order Instruction Type BA682 BA683

Contextual Info: BZT55C. Vishay Telefunken Silicon Epitaxial Planar Z–Diodes Features D D D D D Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances 96 12009 Applications Voltage stabilization Order Instruction

Contextual Info: TZQ5221B.TZQ5267B Vishay Telefunken Silicon Epitaxial Planar Z–Diodes Features D D D D D Very sharp reverse characteristic Low reverse current level Available with tighter tolerances Very high stability Low noise 96 12009 Applications Voltage stabilization

BA779

Abstract: BA779S
Contextual Info: BA779.BA779S Vishay Telefunken RF PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Order Instruction Type Type Differentiation VR = 30 V, Zr = 5kΩ VR = 30 V, Zr = 9kΩ

TZQ5221B

Abstract: TZQ5222B TZQ5223B TZQ5224B TZQ5225B TZQ5226B TZQ5267B
Contextual Info: TZQ5221B.TZQ5267B Vishay Telefunken Silicon Epitaxial Planar Z–Diodes Features D D D D D Very sharp reverse characteristic Low reverse current level Available with tighter tolerances Very high stability Low noise 96 12009 Applications Voltage stabilization

SC-95

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

ZMM55C

Abstract: ZMM55-C10 ZMM55C-5V1 ZMM55C3V3 ZMM55C2V4 ZMM55C2V7 ZMM55C3V0 ZMM55C3V6 ZMM55C3V9 ZMM55C4V3
Contextual Info: ZMM55C Series Surface Mount Zener Diodes P b Lead Pb -Free SMALL SIGNAL ZENER DIODES 0.5 WATTS Features: *5 0 0 m w Power Dis s ipation *Genelral P urpos e , Medium Current *Ideal for S urface Mountted Application Mechanical Data: *Cas e : MIN I-ME L F Glas s Cas e (S OD-8 0 )

FLL101

Abstract: LL101A LL101B LL101C
Contextual Info: LL101A–LL101C Vishay Semiconductors Small Signal Schottky Barrier Diodes Features D Integrated protection ring against static discharge D Low capacitance D Low leakage current D Low forward voltage drop Applications HF–Detector Protection circuit Diode for low currents with a low supply voltage

C9750-10FC

Abstract: L9181-02 C9750 L8121-02 L9421-02 L9931 C9732DK L9191 L10321 csi fop
Contextual Info: X線源カメラ セレクションガイド X-ray Sources & Cameras Selection Guide 各種工業製品や食品など、品質や安全性が厳しく問われる現在において、微細な内部構造の欠陥、異物 の混入などの検査を非接触、非破壊で行えるX線検査は品質、安全性の向上のために非常に有効な手段

1N4151

Abstract: LS4151
Contextual Info: LS4151 Vishay Telefunken Fast Switching Diode Features D Silicon Epitaxial Planar Diode D Electrical data identical with the device 1N4151 D Quadro Melf package 96 12009 Applications Extreme fast switches Order Instruction Type LS4151 Type Differentiation

1N4151

Abstract: LL4151 LL4151-GS08
Contextual Info: LL4151 Vishay Telefunken Fast Switching Diode Features D Silicon Epitaxial Planar Diodes D Electrical data identical with the device 1N4151 Applications 94 9371 Extreme fast switches Order Instruction Type LL4151 Type Differentiation VRRM = 75 V Ordering Code

TB6612

Abstract: TB6612FNG SSOP24
Contextual Info: TB6612FNG Toshiba Bi-CD Integrated Circuit Silicon Monolithic TB6612FNG Driver IC for Dual DC motor TB6612FNG is a driver IC for DC motor with output transistor in LD MOS structure with low ON-resistor. Two input signals, IN1 and IN2, can choose one of four modes such as CW, CCW, short

Contextual Info: BAS85 Vishay Semiconductors Small Signal Schottky Barrier Diode Features D Integrated protection ring against static discharge D Very low forward voltage Applications 94 9371 Applications where a very low forward voltage is required Order Instruction Type

Contextual Info: BA979/BA979S VISHAY Vishay Semiconductors RF PIN Diodes Features • Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 9612009 Mechanical Data Case:QuadroMELF Glass Case SOD-80 Weight: approx. 33.7 mg

BA682

Abstract: BA683 semiconductor band color code
Contextual Info: BA682/BA683 VISHAY Vishay Semiconductors Band Switching Diodes Features • • • • Silicon Planar Diodes Low differential forward resistance Low diode capacitance High reverse impedance Applications 94 9371 Band switching in VHF-tuners Mechanical Data

TB6612FNG

Abstract: TB6612
Contextual Info: TB6612FNG Toshiba Bi-CD Integrated Circuit Silicon Monolithic TB6612FNG Driver IC for Dual DC motor TB6612FNG is a driver IC for DC motor with output transistor in LD MOS structure with low ON-resistor. Two input signals, IN1 and IN2, can choose one of four modes such as CW, CCW, short

AEC-Q100-002

Abstract: IL12 PD166020
Contextual Info: Preliminary Data Sheet PD166020T1F R07DS0441EJ0100 Rev.1.00 Aug 15, 2011 MOS INTEGRATED CIRCUIT 1. Overview 1.1 Description The μPD166020T1F is a single N-channel high-side switch with charge pump, diagnostic feedback with load current sense and embedded protection functions.

02T02

Contextual Info: TZMC. Vishay Semiconductors Silicon Epitaxial Planar Z–Diodes Features D D D D D Very sharp reverse characteristic Low reverse current level Available with tighter tolerances Very high stability Low noise Applications 94 9371 Voltage stabilization Order Instruction

cpr 04 relay

Abstract: PD166021 AEC-Q100-002 IL12 39 marking
Contextual Info: Preliminary Data Sheet PD166021T1F R07DS0442EJ0100 Rev.1.00 Sep 07, 2011 MOS INTEGRATED CIRCUIT 1. Overview 1.1 Description The μPD166021T1F is a single N-channel high-side switch with charge pump, diagnostic feedback with load current sense and embedded protection functions.

CMC02

Contextual Info: CMC02 東芝整流ダイオード シリコン拡散接合形 CMC02 ○ ストロボフラッシュ放電回路用 • ピーク繰り返し逆電圧 : VRRM = 400 V • 平均順電流 : IF AV = 1.0 A • ピーク順電圧 : VFM = 1.0 V(最大) • ピーク繰り返し順電流

BA682

Abstract: BA683 DIODE ba 683
Contextual Info: BA682.BA683 Vishay Semiconductors Band Switching Diodes Features D D D D Silicon Planar Diodes Low differential forward resistance Low diode capacitance High reverse impedance Applications 94 9371 Band switching in VHF–tuners Order Instruction Type BA682

LL4150

Contextual Info: LL4150 Vishay Semiconductors Fast Switching Diode Features D Silicon Epitaxial Planar Diodes D Low forward voltage drop D High forward current capability Applications 94 9371 High speed switch and general purpose use in computer and industrial applications