DIODE T7S Search Results

Contextual Info: bbsa'm odsmsti « apx Philips Semiconductors Product specification Silicon planar epitaxial high-speed diode N DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching applications. BAS55

Contextual Info: N E C ELECTRONICS INC b5E D • b42752S 003Ô07Û T7S H N E C E DATA SHEET |\|E C Z PHOTO DIODE NDL5104P, NDL5104P1 E U C T H O N D E V IC E 1 300 nm OPTICAL FIBER COM M UNICATIONS <t>1 0 0 am G ERM ANIUM AVALAN CH E PHOTO DIODE M OD ULE D E S C R IP T IO N

ESJA52-12A

Abstract: HIGH VOLTAGE DIODE 12kv 22VZ
Contextual Info: 1. SCOPE This specification provide the ratings and the requirements for high voltage silicon diode ESJA52-12A made by FUJI ELECTRIC CO.LTD. 2. OUT VIEW Shape and dimensions are described in Fig. 3. 3. IDENTIFICATION The diode shall be marked with Cathode Mark and Lot No.

Contextual Info: SGS-THOMSON fl M IÎLi gTïïM »(§S T M B Y V 1 0 -6 0 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featu­ ring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high fre­

DAF91

Abstract: EAF42 daf 91 diode EGL 1
Contextual Info: DAF 91 DAF 91 Diode - A.F. pentode battery valve T he D A F 91 is a d iode-pentode b a tte ry valve. T he p en to d e section is su itab le for A .F. am plification, th e diode being th e n used for detectio n or A.G.C. The voltag e am p lificatio n o b tain ab le from th e p e n ­

12 v smps 5 amps

Abstract: CBR2045CT
Contextual Info: >!L CBR2045CT Dual Dual Centre Tap Schottky Barrier Rectifier suited for SMPS and High Frequency DC to DC Converters ABSOLUTE MAXIMUM RATINGS Parameters Symbol Average Rectified Forward Current duty cycle = 0.5; T c = 135 °C Per Diode Per Device IF(AV)

Contextual Info: PD-2.467 International ïor ]Rectifier HFA160NJ40C HEXFRED Ultrafast, Soft Recovèry Diode LUG TERMNAL ANODE 1 Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters LUG V r = 400V TERMNAL ANODE 2 M V F = 1.3V

Contextual Info: AflPLI FON IX INC 45E ] • Dfi0t.2B7 0D0D04? ? ■ AFX T P IN Diode Sw itches Listed by increasing Number of Throws and I.L.) ~ }$ Typ Freq. Range (MHz) Typ Max Isolation Typ Min TW M 5000 SPST 10-1500 1.0 1.5 50 TW D5002 SPDT 30-1000 0.9 1.8 TW D5001 SPOT

Contextual Info: l.lA / 1 0 0 ~ 2 0 0 V / t r r : 200nsec FAST RECOVERY DIODE 10 D F1 10DF2 FEATURES «Miniature Size ° Super Fast Recovery * Low Forward Voltage Drop ° Low Power Loss, High Efficiency ° High Surge Capability ° 100 Volts thru 800 Volts Types Available ° 52mm Inside Tape Spacing Package Available

HL6711G

Contextual Info: HITACHI/ OPTOELECTRONICS 54E D • MMTbSQS □ Gll'Hfl ßfiE ■ H I T ‘4 AIGalnP LD H L 67 11 G Description The HL6711G is a 0.67 pm band AIGalnP gain-guided laser diode with a double heterostructure. It is suit­ able as a light source for barcode readers, levelers and various other types of optical equipment. Hermetic

ixys dsek 30

Abstract: 3006A 30-06A
Contextual Info: Common Cathode Fast Recovery Epitaxial Diode FRED DSEK 30 VRRM = 600 V ^FAVM = 2 X 30 A trr = 35 ns P relim inary d ata TO-247 AD ^ rsm ^ rrm Type 640 600 DSEK 30-06A Symbol Test Conditions ^FnHS ^FRU ^VJ —^VJM Tc = 85°C; rectangular, d = 0.5 tp < 10 us; rep. rating, pulse.width limited by TVJM

FLD150F2KP

Contextual Info: I lnGaAsP/lnP LASER DIODE MODULE FLD 150F2KP FEATURES • Wavelength 1 .5 5 jura • Fast pulse response t r = 100 psec., t f = 150 psec. • Optical isolation 3 0 dB • Fiber o u tp u t power 2 .5 mW • H erm etically sealed SIP ceramic package • B uilt-in optical isolator, ternary P IN -P D , therm istor and

MTT 25n 12

Contextual Info: 2 R I2 5 0 E 2 x 250A r j-— • g ± s i r7 - :£ ì > 3 . — ) \ , If t —Jls : Outline Drawings POWER DIODE MODULE I Features Large Capacitance • WOfflb Insulated Type • 131.0 I 25.0_|_ 3B.0 . [«¡.0 _31.C 68.5 Easy Connection • #7 —v 3 fl-M 8(H exagon B nlt and Washer Assem blies)

CA3005

Abstract: 30S3 ESAD39 SC-65 T760
Contextual Info: E S A D 3 9 C , I M , D ( 1 OA) S ± 'J I * - K ’ Outl i ne Drawings FAST RECOVERY DIODE Features • tr - K S uper high speed sw itch in g . £ —^ % > W !£ t f ifk l ' Low V f in turn on iP7C Connection Diagram High reliability ESA D 39-D D C : Appl i cati ons

9S24

Contextual Info: 6 D I 10 A - 1 2 0 ÜOA : O utline Drawings POWER TRANSISTOR M ODULE : F e a tu re s • 7 'J — ¡ t i 'f l) ^ r — KrtSS • h F E ^ jf t l ' Including Free W heeling Diode High DC Current Gain • # S J Insulated Type • f f i i Ê : A p p lic a tio n s

Contextual Info: • 4302271 0QS373Ô T7S ■ HAS 2 N 6 7 67 2N 6768 2 H a r r i s August 1991 N -C h an n el E n h an cem en t-M o d e Power M OS F ie ld -E ffe c t Transistors Package Features T O -2 0 4 A A • 12A and 14A, 3 5 0V - 400V BOTTOM VIEW • fDS(on = 0 .4 fl and 0 .3 fi

Contextual Info: Fast Switching SCR T7SH _ _ 4 6 Symbol <pO <PD, 0D 2 H <pj L N Inches Min. 1.850 1.140 1.760 .545 .135 .072 7.75 .025 Max. 1 900 1.180 1.850 605 .145 .082 8.50 4 6 0 A Avg. 7 2 0A R M S 1400-1800 Volts 80-100yusec M illim eters Min. Max. 45 72 48.26 2896 2997

VG700

Contextual Info: 450A A vg. 700 RMS Up to 1400 Volts 2 5 -5 0 /is Fast Switching SCR T7SH 45 Inches M illim e te rs Symbol Min. 1.850 1.140 1.760 Max. 1.900 1.180 1.850 M in. 45.72 28.96 44.70 Max. 48.26 29.97 46.99 J, .545 .135 .072 .605 .145 .082 13.84 3.43 1.83 15.37

SE 2040

Abstract: SCR 400V 1000A
Contextual Info: 6 0 0 A Avg. 950 RMS Up to 800 Volts 20-40 fjs Fast Switching SCR T7SH 60 Inches Millimeters Symbol (f>D 4>D tpD2 , H <i>J J, Min. 1.850 1.140 1,760 Max. 1.900 1.180 1.850 Min. 45.72 28.96 44.70 Max. 48.26 29.97 46.99 .545 .135 .072 :605 .145 .082 13.84

DRM100

Contextual Info: 4 0 0 A Avg. 700 RMS Up to 1200 Volts 1 0 -5 0 /is Fast Switching SCR T7SH .40 In ch e s M illim e te rs S ym bo l 4>D 0D , <p07 H $J J, L N M in . M ax M in . M ax. 1 .8 5 0 1.140 1.7 60 1 .9 0 0 1 .1 8 0 1 .8 5 0 4 5 ,7 2 2 8 .9 6 4 4 .7 0 4 8 .2 6 29.97

ups 25-60

Contextual Info: 5 0 0 A Avg. 786 RMS Up to 1200 Volts 2 5-60 /j s Fast Switching SCR T7S7 50 Inches M illim e te rs Symbol C a iln x i: n n P otfntu l - // L n {Rc?ci> Min. 1 850 1.140 1.760 Max. 1.900 1.180 1.850 Min. 45.72 28.96 44.70 Max. 48 .26 29.97 46.99 J, .545

32T7S

Contextual Info: 600A Avg. 943 R M S Up to 1400 Volts 15-60/is Fast Switching SCR T7S7 60 Inches Millim eters Sym bol <#>D 0D, <#>D, H 4/J J, L Min. 1,850 1.140 1.760 Max. 1.900 1.180 1.850 M in 45.72 28.96 44.70 Max. 48.26 29.97 46.99 .545 .135 .072 .605 145 082 13.84

LA4070

Abstract: 2WAY AS10 AS11 AS12 DIP30S LA2800N
Contextual Info: SANYO SEMICONDUCTOR. 15E CORP » I 7 T T 7 -0 7 ti ODOBOSâ T7S-07-I5&#39; LA2800N: M o n o lith ic L in ea r IC 3061 Telephone A n sw e rin g M a ch in e 2572 • ' General Description The LA2800N is a telephone answering machine-use bipolar IC that performs the

HA16107FP

Contextual Info: HITACHI/ LINEAR DEVICES SIE D • 44^202 00117Ô1 HA16107FP/P, HA16108FP/P- T7S r - ö ’s - i t ' S 600kHz PWM Switching Regulator Controller Description HA16107P, HA16108P The HA 16107 and HA 16108 series are primary control switching regulator control IC’s appropriate for di­