AS12 Search Results

Contextual Info: GaAs 1C SP4T Non-Reflective Switch DC-2.5 GHz EHA lp h a AS124-61 Features LQFP-32 • -3 V to -5 V Operation 0.364 9.25 mm 0.344 (8.74 mm) SO. ■ High Isolation (38 dB @ 1.9 GHz) 32 ■ 0.280(7.11 mm) 0.272 (6.91 mm) SQ. nnndnpnn ■ Low Insertion Loss (0.7 dB @ 1.9 GHz)

Contextual Info: EBAlpha GaAs IC Transfer Switch DC-2 GHz AS126-62 Features SSQP-8 • High Linearity IP3 45 dBm @ 0.9 GHz 1M ■ Low Insertion Loss (0.6 dB @ 0.9 GHz) 0.220 (5.60 mm) 0.197 (5.00 mm) ■ Simultaneous T/R Switching PIN 1-' INDICATOR Description The AS126-62 is a 4 port switch designed to combine T/R

AS1213

Abstract: SAA3010T SAA3010 LC7461 PT2222 9028-021022023021APT2222 455KHZ ASIC 101 M34280 drv611
Contextual Info: 深圳市爱思科微电子有限公司 Shenzhen ASIC Micro-electronics Ltd. AS1213 AS1213 AS1213 多功能红外遥控器芯片 多功能红外遥控器芯片 规格书 December 2001 Version 1.0 深圳市爱思科微电子有限公司 Shenzhen ASIC Micro-electronics Ltd

NEC AC12

Abstract: NEC TRIAC 12 F NEC TRIAC AC12FSM ac12dsm AC12FSMA AC12 AC12DSMA AS12
Contextual Info: DATA SHEET AC12DSM, AC12FSM, AC12DSMA, AC12FSMA 12 A RESIN INSULATION TYPE TRIAC The AS12[ ]SM, AC12[ ]SMA are resin insulation type TRIACs with an effective current of 12 A TC = 74 °C . These products are covered with resin mold on the entire case and are electrically insulated with electrodes,

as128Kx8

Contextual Info: ^ E D E D I8 8 1 2 8 C S I Bactronlc D*»lgn» Inc. • High Performance Megabit Monolithic SRAM 128Kx8 Monolithic High Speed CMOS Static RAM Features The EDI88128CS is a high speed, high performance, megabitdensitymonolithicStatic RAMorganized as128Kx8 bits.

0m02

Abstract: AS1213 AS1200 AS1200-M3 AS1000 AS1000-M3 AS12 AS1400-M3
Contextual Info: 3-12 FLOW CONTROL EQUIPMENT SPEED CONTROLLERS S U P E R C O M PA C T B O D Y P O R T E D M E TA L I N L I N E /E L B O W T Y P E S AS1000-M3 AS1200-M3 AS1400-M3 Flow Control Equipment S u p e r- c o m p a c t s i z e a n d l i g h t w e i g h t P ro p o r t i o n a l s p e e d c o n t ro l : To 2 0 ᐉ / m i n A N R

Contextual Info: AS12C42 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.1p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage10 Q Factor Min. f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-C Mounting StyleS

Contextual Info: 4/05 100 TO 1200 MHz SMTO-8 CASCADABLE AMPLIFIER AS1209 AS1209 1.0 dB 28.0 dB +19.8 dBm SMTO-8 Package for Amplifiers Low Noise Figure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . High Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

AS124-61

Abstract: LQFP-32 AS124
Contextual Info: GaAs IC SP4T Non-Reflective Switch DC–2.5 GHz AS124-61 Features LQFP-32 • -3 V to -5 V Operation 0.364 9.25 mm 0.344 (8.74 mm) SQ. ■ High Isolation (38 dB @ 1.9 GHz) 32 0.280 (7.11 mm) 0.272 (6.91 mm) SQ. 1 ■ Low Insertion Loss (0.7 dB @ 1.9 GHz)

Contextual Info: GaAs MMIC High Isolation SPST Switch Positive Control 0.7-2.5 GHz EEAlpha AS123-12 Features SOIC-8 • Single Positive Control Voltage PIN 8 ■ +5 V Operation \ ■ High Isolation 45 dB @ 0.9 GHz, 52 dB @ 1.9 GHz *— R f\ f Î ! 0.244 (6.20 mm) 0.228 (5.80 mm)

74AC16244

Contextual Info: 74AC16244 16-BIT BUFFER/LINE DRIVER WITH 3-STATE OUTPUTS SC AS120 - D3465, MARCH 1990 - R EVIS ED APRIL 1993 Member of the Texas Instruments Widebus Family DGG OR DL PACKAGE TOP VIEW Packaged in Shrink Small-Outline 300-mil Package Using 25-mil Center-to-Center Pin

31-oq

Contextual Info: GaAs 1C SP4T Non-Reflective Switch DC-2.5 GHz ESAlpha AS124-61 LQFP-32 F eat ur e s • -3 V to -5 V Operation 0.364 9.25 mm ■ 0.344 (8.74 mm] SQ. ■ High Isolation (38 dB @ 1.9 GHz) 32 nnnn 0.280 (7.11 mm) 0.272 (6.91 mm] SQ. ■ Low Insertion Loss (0.7 dB @ 1.9 GHz)

A0416

Contextual Info: IS24C01 W 1024-BIT SERIAL ELECTRICALLY ERASABLE PROM M ADVANCE INFORMATION APRIL 1998 OVERVIEW FEATURES • Low power CMOS — Active current less than 2 mA — Standby current less than 8 |aA • Hardware write protection — Write control pin • Internally organized as128 x 8

31oQ

Contextual Info: GaAs 1C SP4T Non-Reflective Switch DC-2.5 GHz ESAlpha AS124-61 LQFP-32 F eat ur e s • -3 V to -5 V Operation 0.364 9.25 mm ■ 0.344 (8.74 mm] SQ. ■ High Isolation (38 dB @ 1.9 GHz) 32 nnnn 0.280 (7.11 mm) 0.272 (6.91 mm] SQ. ■ Low Insertion Loss (0.7 dB @ 1.9 GHz)

as127* switch

Contextual Info: GaAs IC Transfer Switch DC–2 GHz AS127-59 Features MSOP-8 • High Linearity +45 dBm IP3 @ 0.9 GHz 0.0256 (0.65 mm) TYP. ■ Small MSOP-8 Plastic Package PIN 1 INDICATOR ■ Low Insertion Loss (0.4 dB @ 0.9 GHz) 0.118 (3.00 mm) ± 0.004 (0.1 mm) SQ. 0.193 (4.90 mm)

AS125-73

Abstract: as125
Contextual Info: GaAs IC SPDT Reflective Switch Positive Control DC–2.5 GHz AS125-73 Features SOT-6 • Low Insertion Loss 0.4 dB @ 0.9 GHz 0.074 (1.90 mm REF.) ■ Complementary Positive Control Voltages (0/+3 V to 0/+5 V) ■ Positive Voltage Supply (+3 to +5 V) ■ Low DC Power Consumption

as1217

Abstract: P55C 417-139
Contextual Info: ALPHA SEMICONDUCTOR Excellence in Analog Power Products AS1217 800mA Ultra Low Dropout Voltage Regulator Fast Response, Adjustable & Fixed FEATURES APPLICATIONS • • • • • • Notebook • 3.3V to 2.5V ATX Power Supplies • M ultim edia/ G raphic C ard

AS126-62

Abstract: as126 AS126 GaAs Switch
Contextual Info: GaAs IC Transfer Switch DC–2 GHz AS126-62 Features SSOP-8 • High Linearity IP3 45 dBm @ 0.9 GHz ■ Low Insertion Loss (0.6 dB @ 0.9 GHz) 0.220 (5.60 mm) 0.197 (5.00 mm) ■ Simultaneous T/R Switching 0.323 (8.20 mm) 0.291 (7.40 mm) PIN 1 INDICATOR Description

Contextual Info: SEMICONDUCTOR Excellence in Analog Power Products AS1219 3A Ultra Low Dropout V oltage Regulator Adjustable & Fixed Super Fit Surface M ount Package FEATURES APPLICATIONS • • • • • • 3.3V to 2.5V ATX Power Supplies • 3.3V to 2.9V for Portable PENTIUM Processor

Contextual Info: PRELIMINARY DATA SHEET AS12322-86: GaAs IC 5 Bit Digital Attenuator 0.5 dB LSB Positive Control 0.5–2.5 GHz Features MSOP-10 Attenuation 0.5 dB steps to 15.5 dB with high accuracy ● Single positive control +3 to +5 V for each bit ● Low DC power consumption

AS121-12

Contextual Info: GaAs IC High Isolation SPST Switch Non-Reflective Positive Control 0.7–2 GHz AS121-12 Features SOIC-8 • Complementary Positive Control Voltages PIN 8 0.050 1.27 mm BSC ■ 5 V Operation ■ Input and Output Non-Reflective 0.244 (6.20 mm) 0.228 (5.80 mm)

AS123-12

Abstract: AS148-24
Contextual Info: GaAs MMIC High Isolation SPST Switch Positive Control 0.7–2.5 GHz AS123-12 Features SOIC-8 • Single Positive Control Voltage PIN 8 0.050 1.27 mm BSC ■ +5 V Operation ■ High Isolation (45 dB @ 0.9 GHz, 47 dB @ 1.9 GHz) 0.244 (6.20 mm) 0.228 (5.80 mm)

Contextual Info: GaAs 1C High Isolation SPST Switch Non-Reflective Positive Control 0.7-2.0 GHz EBAlpha AS121-12 Features SOIC-8 • Complementary Positive Control Voltages PIN 8 ■ 5 V Operation «— ■ Input and Output Non-Reflective PIN 1 IN D IC A TO R - ■ High Isolation 46 dB @ 0.9 GHz

Contextual Info: GaAs 1C 2 Watt High Linearity SPDT Switch DC-2.0 GHz EBAlpha AS128-73 Features SOT-6 • High Linearity 48 dBm IP3 @ 0.9 GHz 0.074 (1.90 mm REF.) ■ Low Insertion Loss (0.35 dB @ 0.9 GHz) P IN 6 _ 4 j ] ■ Antenna Changeover and T/R Cellular Switch PIN 1