DIODE T 9722 Search Results

C62M

Abstract: BHM 06 4050AE
Contextual Info: ERC62M-004HOA SCHOTTKY BARRIER DIODE • 4 # il : Features • tUtt t t ® tf& B Z tit-7 ) V ■? Insulated package by fu lly m o ld in g . • <£Vf Low V F Connection Diagram • t a -v + ' s v Super high speed sw itch in g . • 7V — ftffil-.fcSSiBiiHife

83-004 diode

Abstract: D 83-004
Contextual Info: E R A 8 3 - 0 4 i a : O utline D raw ings SCHOTTKY BARRIER DIODE Features • ifeVF Low V F itti Super high speed sw itchin g. • *. M arking BEDfe; a a ifit-is a im a ti - High reliability by planer design. • 4 É t f t # A «TÈI o I T T Ì 3V - K 7 - ?

Contextual Info: SPEC 1 F 1 CAT DEVICE NAME : TYPE NAME : SPEC. No. : DATE . 1 ON SILICON DIODE E RW 0 T - 1 2 0 i F u j i E l e c t r i c Co., Ltd. This S p e c if ic a t io n is s u b je c t to change w ith o u t n o tic e . DATE CHECKED APPROVED Fuji Electric Co^LicL 1

A129 marking code

Abstract: 5F marking
Contextual Info: ERB38 o .8A : Outline Drawings r4 * - Y FAST RECOVERY DIODE • t t f t : F e a tu re s :5F : Marking Su p e r high speed sw itching • 9 - > * y W E fie1 il' Ì 7- 3-K : à Color code : White Low V F in turn on • AfltM tt H igh reliability Abridged type name

Fuji Electric SM

Contextual Info: SPECIFICATION Device Name_ : High Voltage Si I icon Diode T y p e Name_ E S J A 8 3 " * 1 6 A _ Spec. : No._ :_ Fuji Electric Co.Ltd. Matsumoto Factory DATE NAME APPROVED Fuji Electric Co.,Ltd.

A461

Contextual Info: TS802C04 ioa '> a 'y h + —*'< l) T ÿ ' i J r — K SCHOTTKY BARRIER DIODE • J& S : : Features • mm Surface m ount device. • flSV F Low V f • T A 'y + 's V * I f - FA"'# $ ' C onnection D iagram Super high speed sw itchin g. • 7V —j — iiffilciSigff

Contextual Info: TP805C04<2oa »>a SCHOTTKY BARRIER DIODE : Features Low V F ►X -f i-K tf# * « * * .' Super high speed sw itchin g. Connection Diagram >-?\s— r - f t i e i c i s s i t i s i i High reliability by planer design. IffliÉ : Applications H igh speed pow er sw itchin g.

Contextual Info: 1 F S P E C 1 C A T ! DEVICE NAME : SILICON DIODE TYPE NAME : E RW O 4- 0 6 0 SPEC. No. : _ _ DATE : F u j i O N . E l e c t r i c Co. .Ltd. This S p e cifica tio n is subject to change without notice. DATE NAM E APPROVED Fuji Electric Codici DRAWN

ITT 451 DIODE

Contextual Info: T P802C 04 ioa SCHOTTKY BARRIER DIODE Features Low VF Super high speed sw itchin g. Connection Diagram High reliability by planer design. É : Applications High speed p ow er sw itchin g. M axim um Ratings and Characteristics : A bsolute M axim um Ratings

Contextual Info: •L S P E C DEVICE NAME I F I C A T I ON SILICON DIODE TYPE NAME E RW O 6 - 0 6 0 - SPEC. No. . DATE F u j i E l e c t r i c Co., Ltd. This S p e c ific a tio n is subject to change without notice. DATE NAME APPROVED F u ji E l e c t r i c C o ^ L id . ORAWN

Contextual Info: S P E C I F I C A T I O DEVICE NAME : SILICON DIODE TYPE NAME : E RW O 1 - Q 6 0 SPEC. No. : DATE : _ N -. - • F u j i E l e c t r i c Co., Ltd. This S p e c ific a tio n is subject to change without notice. D A TE NAME APPROVED

Contextual Info: SP EC I F I C A T I ON SILICON DIODE DEVICE NAME TYPE NAME ERWO 2 - 0 > 60 SPEC. No. . DATE F u j i E l e c t r i c Co., Ltd. This S p e c ific a tio n is subject to change without notice. DAT É DRAWN NAME APPROVED Fuji E lectric C a n te i — á jx CHECKED

Contextual Info: E R A 8 4 - 0 9 i a s ± • £ f 'I « ^ î- k : Outl i ne D raw ings SCHOTTKY BARRIER DIODE : Feat ures • te V F ■ Low VF : M arking Ä i - 3 - K :if Super high speed sw itching. C o lo r co d e : B lue • ■ f i '- i — m fit:,* * » f t i a t i

Contextual Info: 6R1TI30Y-080 y 4 TS . y y ' f a 9 ? ^ ± y < r7 - ;e i > 3 . - u u — — DIODE and TYRISTOR MODULE • ¡ftft : Features • 13=7 X ' • a 7 Glass Passivation Chip Easy Connection • Jfeliffi Insulated Type • d i/d tiM # ^ £ Large d i/d t • d v /d tifiift* '1

era85 diode

Contextual Info: '> a ’y | *+— Y • : Outline Drawings SCHOTTKY BARRIER DIODE Features • ftV P Low vF : Marking • 7>4'V*'s*f x d S u p e r h ig h speed s w itc h in g . HECfc r a ■ ■ ■¥ 9 01 a H ig h re lia b ility by p la n e r d e s ig n , • m m -h'J- § K ffi A T O

085mh

Contextual Info: PD - 97228 IRFI4228PbF PDP SWITCH Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications

Contextual Info: PD - 97222 PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability

Contextual Info: F U JI lä 'U J M s u 'ü ü U K 2SK1278 N-channel MOS-FET F-V Series 500V > Features - l,lß 10A 100W > Outline Drawing Include Fast Recovery Diode High Voltage Low Driving Power > Applications - Motor Control Inverters Choppers > Maximum Ratings and Characteristics

mosfet 500v 10A

Abstract: diode 500v 10A mosfet 10a 500v power diode 500v 10A 2SK1278
Contextual Info: 2SK1278 N-channel MOS-FET F-V Series 500V > Features 1,1Ω 10A 100W > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit

Contextual Info: 2SK1279 N-channel MOS-FET F-V Series 500V > Features 0,58Ω 15A 125W > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit

Mosfet 30A 250V

Abstract: 2SK1277
Contextual Info: 2SK1277 N-channel MOS-FET F-V Series 250V > Features 0,12Ω 30A 150W > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit

Contextual Info: 2SK1278 N-channel MOS-FET F-V Series 500V > Features 1,1Ω 10A 100W > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit

2SK1277

Contextual Info: 2SK1277 N-channel MOS-FET F-V Series 250V > Features 0,12Ω 30A 150W > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit

Contextual Info: 2SK1280 N-channel MOS-FET F-V Series 500V > Features 0,5Ω 18A 150W > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit