3A500 Search Results

Contextual Info: Standard Products UT8ER512K32 Monolithic 16M RadHard SRAM Preliminary Data Sheet May 21, 2007 www.aeroflex.com/radhardsram INTRODUCTION FEATURES ‰ 20ns read, 10ns write maximum access times ‰ Functionally compatible with traditional 512K x 32 SRAM devices

Contextual Info: Standard Products UT8ER1M32 32Megabit SRAM MCM UT8ER2M32 64Megabit SRAM MCM UT8ER4M32 128Megabit SRAM MCM Preliminary Data Sheet August 28, 2012 www.aeroflex.com/memories FEATURES  20ns Read, 10ns Write maximum access times available  Functionally compatible with traditional 1M, 2M and 4M

UT8ER

Abstract: UT8ER512K
Contextual Info: Standard Products UT8ER512K32 Monolithic 16M RadHard SRAM Preliminary Data Sheet September 28, 2006 www.aeroflex.com/radhard INTRODUCTION FEATURES ‰ 20ns read, 10ns write maximum access times ‰ Functionally compatible with traditional 512K x 32 SRAM devices

JS28F512M29

Abstract: js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

Contextual Info: Standard Products UT8ER1M32 32Megabit SRAM MCM UT8ER2M32 64Megabit SRAM MCM UT8ER4M32 128Megabit SRAM MCM Data Sheet January, 2013 www.aeroflex.com/memories INTRODUCTION The UT8ER1M32, UT8ER2M32, and UT8ER4M32 are high performance CMOS static RAM multichip modules MCMs

7be0

Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

M29EWL

Abstract: M29EW JS28F00AM29EWH 28F256M29EW JS28F00AM29EW
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

JS28F00am29

Abstract: JS28F00AM29EW JS28F512M29 js28f256m29 pc28f00am29ew pc28f00am29 JS28F512 PC28F00B PC28F512M JS28f256
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

TDQ31

Contextual Info: Standard Products UT8ER512K32 Monolithic 16M RadHard SRAM Advanced Data Sheet May, 2006 The UT8ER512K32 is a high-performance CMOS static RAM organized as 524,288 words by 32 bits. Easy memory expansion is provided by active LOW and HIGH chip enables E1, E2 , an

UT8ER512K32

Contextual Info: Standard Products UT8ER512K32 Monolithic 16M SRAM Data Sheet July 24, 2012 www.aeroflex.com/memories INTRODUCTION FEATURES  20ns Read, 10ns Write maximum access times  Functionally compatible with traditional 512K x 32 SRAM devices  CMOS compatible input and output levels, three-state

UT8ER512K32

Contextual Info: Standard Products UT8ER512K32 Monolithic 16M RadHard SRAM Preliminary Data Sheet September, 2006 www.aeroflex.com/radhard INTRODUCTION FEATURES ‰ 20ns maximum access time ‰ Asynchronous operation, functionally compatible with industry-standard 512K x 32 SRAMs

aeroflex sram edac

Abstract: Aeroflex International
Contextual Info: Standard Products UT8ER512K32 Monolithic 16M RadHard SRAM Advanced Data Sheet May, 2006 www.aeroflex.com/radhard INTRODUCTION FEATURES ‰ 20ns maximum access time ‰ Asynchronous operation, functionally compatible with industry-standard 512K x 32 SRAMs ‰ CMOS compatible inputs and output levels, three-state

UT8ER512K32

Abstract: UT8ER512K32S UT8ER512K32M aeroflex sram edac
Contextual Info: Standard Products UT8ER512K32 Monolithic 16M SRAM Data Sheet June 25, 2010 www.aeroflex.com/memories INTRODUCTION FEATURES ‰ 20ns Read, 10ns Write maximum access times ‰ Functionally compatible with traditional 512K x 32 SRAM devices ‰ CMOS compatible input and output levels, three-state

IN2071

Abstract: 1N5171 1N2070 CER68 3c400 3001C 1N2069 1N4089 CER67 CER69
Contextual Info: N IC R O S E H I CORP/ R p n 1 4 E D | t llt D M D GQDOOlfl T | o; Standard Recovery Axial Lead Epoxy Rectifiers — D.C. Current I q to 5 Amperes CER67 CER68 CER69 CER70 CER500 CER7T CER72 CER73 HCV HC30 HC67 HC68 HC69 HC70 HC500 HC71 HC72. HC73 HC1200

JS28F512

Abstract: JS28F256M29EWL M29EWL js28f256m29 JS28F512M29 JS28F00am29 PC28F512 5D200 PC28F256M29
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

JS28F512M29

Abstract: M29AWH PC28F512M29AWHB pc28f00am29 Micron 512MB NOR FLASH 8bit data PC28F00AM29AWLB PC28F512M PC28F512 JS28F512 M29A
Contextual Info: Preliminary‡ 1Gb, 512Mb: x8, x16 3V Supply NOR Flash Memory Features Micron 3V Supply NOR Flash Memory M29AW – 1Gb, 512Mb x8/x16, Uniform Block Features • Blank check to verify an erased block • VPP/WP# pin protection – Protects first or last block regardless of block protection settings

SRAM edac

Contextual Info: Standard Products UT8ER512K32 Monolithic 16M RadHard SRAM Advanced Data Sheet March, 2006 INTRODUCTION FEATURES ‰ 20ns maximum access time ‰ Asynchronous operation, functionally compatible with industry-standard 512K x 32 SRAMs ‰ CMOS compatible inputs and output levels, three-state

zo 107

Contextual Info: Standard Products UT8ER1M32 32Megabit SRAM MCM UT8ER2M32 64Megabit SRAM MCM UT8ER4M32 128Megabit SRAM MCM Preliminary Data Sheet June 8, 2011 www.aeroflex.com/memories FEATURES  20ns Read, 10ns Write maximum access times available  Functionally compatible with traditional 1M, 2M and 4M

UT8ER2M32

Abstract: UT8ER4M32 UT8ER1M32 SRAM edac
Contextual Info: Standard Products UT8ER1M32 32Megabit SRAM MCM UT8ER2M32 64Megabit SRAM MCM UT8ER4M32 128Megabit SRAM MCM Preliminary Data Sheet August 2, 2010 www.aeroflex.com/memories FEATURES ‰ 20ns Read, 10ns Write maximum access times available ‰ Functionally compatible with traditional 1M, 2M and 4M

UT8ER512K32

Abstract: SRAM edac RAM EDAC SEU Dose
Contextual Info: Standard Products UT8ER512K32 Monolithic 16M RadHard SRAM Preliminary Data Sheet March 4, 2008 www.aeroflex.com/radhardsram INTRODUCTION FEATURES ‰ 20ns Read, 10ns Write maximum access times ‰ Functionally compatible with traditional 512K x 32 SRAM devices

UT8ER512K32

Abstract: UT8ER512K SRAM edac RAM EDAC SEU OP167
Contextual Info: Standard Products UT8ER512K32 Monolithic 16M SRAM Data Sheet January 31, 2011 www.aeroflex.com/memories INTRODUCTION FEATURES  20ns Read, 10ns Write maximum access times  Functionally compatible with traditional 512K x 32 SRAM devices  CMOS compatible input and output levels, three-state

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit x8 / x16, page, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers