ESAD25 Search Results

Contextual Info: ESAD25 C, IM, P ( 1 5 A ) FAST RECOVERY DIODE 1 # ^ : Features High voltage by mesa design. • « f M It t m m &m C o nnection D iagram High reliability : A p p lic a tio n s ESAD25-DDC ° W High speed pow er sw itchin g. ESAD25-DDN ESAD25-DDD q—

Contextual Info: ESAD25 C,N,D (15A) (200V to 400V / 15A) Outline drawings, mm FAST RECOVERY DIODE 15.5 Max. 4.5±0.2 Ø3.2±0.1 5.0±0.1 13.0 10.0 7.2±0.1 1.5 19.5±0.2 2.0 2 3 2.2 1.6 14.5 ±0.2 1 3.0±0.2 15±0.2 1.6 1.1 0.5 1.5 5.45 5.45 JEDEC EIAJ Features High voltage by mesa design

TsE 151

Abstract: diode RU 3AM ESAD25 SC-65 T151 fr6t
Contextual Info: E S A D 2 i m 5 C , N , D ( is a ) l Outline Drawings — r FAST RECOVERY DIODE Features JE D E C E IA J High voltage by mesa design. • M SC-65 W High reliability • V S g c fli Connection Diagram I Applications ESAD25-DDC • M m n ijM - y r's f °

Contextual Info: ESAD25 C,N,D (15A) (200V to 400V / 15A) Outline drawings, mm FAST RECOVERY DIODE 15.5 Max. 4.5±0.2 Ø3.2±0.1 5.0±0.1 13.0 10.0 7.2±0.1 1.5 19.5±0.2 2.0 2 3 2.2 1.6 1.6 14.5 ±0.2 1 3.0±0.2 15±0.2 1.1 0.5 1.5 5.45 5.45 JEDEC EIAJ Features High voltage by mesa design

Contextual Info: ESAD25M C,N,D (15A) (200V to 400V / 15A) Outline drawings, mm 15.5 ±0.3 ±0.3 +0.2 1.1 —0.1 Features 5.45 ±0.2 0.6 +0.2 3.5 ±0.2 1. Gate 2. Drain 3. Source JEDEC EIAJ Insulated package by fully molding High voltage by mesa design 3.2 +0.3 20 Min 1.6 ±0.3

ESAD25M

Abstract: ESAD25MC ESAD25MN
Contextual Info: ESAD25M C,N,D (15A) (200V to 400V / 15A) Outline drawings, mm 15.5 ±0.3 ±0.3 +0.2 5.45 ±0.2 0.6 +0.2 3.5 ±0.2 1. Gate 2. Drain 3. Source JEDEC EIAJ Insulated package by fully molding High voltage by mesa design 3.2 +0.3 20 Min 1.6 ±0.3 1.1 —0.1 Features

Contextual Info: ESAD25M C,N,D <i5A> ¡ a a g g it » f'f = t - K FAST RECOVERY DIODE • Features >W y # I t A' MUR £ t l f t 7 J l ^ - Y94 Insulated package by fully molding. High voltage by mesa design. ►S S i f S t t High reliability ìé m m C onnection D iagram

Contextual Info: ESAD25M C,N,D (15A) (200V to 400V / 15A) Outline drawings, mm 15.5 ±0.3 ±0.3 +0.2 5.45 ±0.2 0.6 +0.2 3.5 ±0.2 1. Gate 2. Drain 3. Source JEDEC EIAJ Insulated package by fully molding High voltage by mesa design 3.2 +0.3 20 Min 1.6 ±0.3 1.1 —0.1 Features

esad25-02c

Contextual Info: ESAD25-02D thru ESAD25-06D Pb ESAD25-02D thru ESAD25-06D Pb Free Plating Product 16.0 Ampere Dual Doubler Tandem Polarity Fast Recovery Rectifier Diodes Features Fast switching for high efficiency Low forward voltage drop Glass passivated with high current capability

Contextual Info: ESAD25-02N thru ESAD25-06N Pb ESAD25-02N thru ESAD25-06N Pb Free Plating Product 16.0 Ampere Dual Common Anode Fast Recovery Rectifier Diodes Features Fast switching for high efficiency Low forward voltage drop Glass passivated with high current capability

T460

Abstract: ESAD25M H150 T151 T930
Contextual Info: ESAD25M C,N,D (15A) IW üH ’î i : Outline Drawings FAST RECOVERY DIODE * Features _0£ Insulated package by fully molding. JEDEC EIAJ High voltage by mesa design. High reliability Connection Diagram : Applications o ESAD25M-DDC ®o— ►! I |4 .-»a

ESAD25M

Abstract: H150
Contextual Info: ESAD25M C,N,D i i 5A) M * a ü i? 4 * - v FAST RECOVERY DIODE * Features Insulated package by fully molding. High voltage by mesa design, • A ffffftt High reliability Connection Diagram ! A pplications ESAD 25M -D D C o Qj ° -— I — — O H igh speed sw itchin g.

ESAD25

Abstract: ESAD25C ESAD25N SC-65 S8014
Contextual Info: ESAD25 C,N,D (15A) (200V to 400V / 15A) Outline drawings, mm FAST RECOVERY DIODE 15.5 Max. 4.5±0.2 Ø3.2±0.1 5.0±0.1 13.0 10.0 7.2±0.1 1.5 19.5±0.2 2.0 2 3 2.2 1.6 14.5 ±0.2 1 3.0±0.2 15±0.2 1.6 1.1 0.5 1.5 5.45 5.45 JEDEC EIAJ Features High voltage by mesa design

Contextual Info: ESAD25-02C thru ESAD25-06C Pb ESAD25-02C thru ESAD25-06C Pb Free Plating Product 16.0 Ampere Dual Common Cathode Fast Recovery Rectifier Diodes Features Fast switching for high efficiency Low forward voltage drop Glass passivated with high current capability

DIODE A112

Abstract: ra8040 ESAD25 SC-65 A114
Contextual Info: ESAD25 C,Nf D ( i s a ) > a a t a t ^ » - K FA ST RECO VERY DIODE 1 4 # ^ : Features ¿v-m otttoM iztf& i' High voltage by mesa design 'ftM Itt High reliability ;C Connection Diagram IffliS l ! Applications ESAD25-DDC ° ESAD25-DGN (Do- ^ ► l -0(3)

DIODE A112

Abstract: RA8040 ESAD25 SC-65
Contextual Info: ESAD25 C,Nf D ( i s a ) > a a t a t ^ » - K FA ST RECO VERY DIODE 1 4 # ^ : Features ¿v-m otttoM iztf& i' High voltage by mesa design 'ftM Itt High reliability ;C Connection Diagram IffliS l ! Applications ESAD25-DDC ° ESAD25-DGN (Do- ^ ► l -0(3)

esac31-02d

Abstract: d5kc40 D8LCA20R
Contextual Info: HIGH•SPEED DIODES Item Number Part Number 10 Max A VRRM (V) t" Max (s) VF IF Max @ Test (V) (A) Package Style Fast-Recovery Rectifiers, Center-Tapped Positive (Co nt' d) 5 10 15 20 SCPAR1F S441DA S447DA SCPAR2F SCPAR4F SCPAR05FF SCPAR10FF SCPAR15FF ESAG73-03C

6DI15S-050

Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Contextual Info: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140

erc24-06

Abstract: ERA21-06 ERC30-02 ERB29-04 ERC48 ERD07-15 ERC24 ERC35-02 ERC38-06 ERD32-01
Contextual Info: COLLMER SEMICONDUCTOR INC 5SE D • HHañTTS Ü0Ü13S3 T ■ very “Quick Reference” Selection Guide 50-100 VOLT Part Number ERA32-01 ERB32-01 ERC30-01 ERD32-01 - 0 3 -O I 200VOLT trr/ns Pkg. Part Number lo A trr/ns Pkg. lo(A) trr/ns Pkg. 1.0 15 1.5 3.0

ERC24-06

Abstract: ERA21-06 ERA18 era-84 ERA15-04 ESAD75-02 ERC24-04
Contextual Info: V -V F U J I M IN I AXIAI. DIODI? S E R IE S T PLAN General purpose D iode T Y P lì -~ FRD FRD SOD Low loss FRD FRD FRD ZENER n FRA15-01 ERA15-02 ERA15-04 MM 15-06 ERA15-08 ERA15-10 BRA-18-02 ERA48-04 100 V 200 200 400 EIÏA22-02 ERA22-04 ERA22-0G ERA22-08

ESAD25-02C

Contextual Info: /TÉ# < H fü il —K / Rectifier Diodes K Fast Recovery Diodes FRD' 2 in one-package Wf £ Device typs SM3 to n s , « s im m I V » c Thermaî rating Charactertsiica T a - 2 S t V fm tefiM *3 trr IfBW*2 Tj and Tstg Amos t ' M ax Volts Max pA ac. rating

ERD29-08

Abstract: esc023 ERA22-02 ERA22-04 ERA22-06 ERA22-08 ERA22-10 ERA34-10 ERD37-08 ERB43-02
Contextual Info: 整流ダイオード / Rectifier Diodes • 高速整流ダイオード Fast Recovery Diodes（FRD） シングル リードタイプ 1 in one-package, lead type 形 式 Device type SMD 絶対最大定格 対応品 Maximum rating VRRM IF AV ＊1 Volts Amps.

ERG81-004

Abstract: ERB38-D ESAC6 YG802C04 ESAD33-02 ERA18 ERB81-004 era-84 YG811S0 YG802C06
Contextual Info: Schottky-barrier diodes Connection Package V rrm Volts 40 45 60 90 Lead Single SC If s m (Amps.) 0.6 25 1.0 50 1.0 50 1.0 30 1.0 30 1.0 30 2.0 80 2.0 100 2.0 60 2.0 60 3.0 120 3.0 80 3.0 80 1.0 40 1.0 30 1.0 30 K-pack 5.0 80 TO-22QAB 5.0 120 5.0 10 TO-220F17 *

mp2a5100

Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
Contextual Info: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors